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Article: Growth of SiO x nanowire bunches cocatalyzed with Ga and Ni

TitleGrowth of SiO x nanowire bunches cocatalyzed with Ga and Ni
Authors
Issue Date2005
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal Of Applied Physics, 2005, v. 98 n. 7, p. 074313-1-074313-5 How to Cite?
AbstractSi Ox nanowire bunches were fabricated on Ni (N O3) 2* 6 H2 O solution-coated Si(111) substrates in a chemical vapor deposition system in the presence of Ga and under the flow of Ar and N H3 gases. The roles of nickel nitrate hydrate, gallium, and ammonia in the formation of Si Ox nanowire bunches were investigated. It was found that Ni and Ga act as catalysts for the growth, while nickel nitrate hydrate also serves as a source of oxygen. The growth mechanisms of different nanowire structures obtained by varying the fabrication conditions are discussed. © 2005 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/174972
ISSN
2015 Impact Factor: 2.101
2015 SCImago Journal Rankings: 0.603
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorCai, XMen_US
dc.contributor.authorDjurišić, ABen_US
dc.contributor.authorXie, MHen_US
dc.date.accessioned2012-11-26T08:48:26Z-
dc.date.available2012-11-26T08:48:26Z-
dc.date.issued2005en_US
dc.identifier.citationJournal Of Applied Physics, 2005, v. 98 n. 7, p. 074313-1-074313-5en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://hdl.handle.net/10722/174972-
dc.description.abstractSi Ox nanowire bunches were fabricated on Ni (N O3) 2* 6 H2 O solution-coated Si(111) substrates in a chemical vapor deposition system in the presence of Ga and under the flow of Ar and N H3 gases. The roles of nickel nitrate hydrate, gallium, and ammonia in the formation of Si Ox nanowire bunches were investigated. It was found that Ni and Ga act as catalysts for the growth, while nickel nitrate hydrate also serves as a source of oxygen. The growth mechanisms of different nanowire structures obtained by varying the fabrication conditions are discussed. © 2005 American Institute of Physics.en_US
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_US
dc.relation.ispartofJournal of Applied Physicsen_US
dc.rightsJournal of Applied Physics. Copyright © American Institute of Physics-
dc.rightsCopyright 2005 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics, 2005, v. 98 n. 7, p. 074313:1-5 and may be found at http://scitation.aip.org.eproxy1.lib.hku.hk/content/aip/journal/jap/98/7/10.1063/1.2081114-
dc.rightsJournal of Applied Physics. Copyright © American Institute of Physics-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.titleGrowth of SiO x nanowire bunches cocatalyzed with Ga and Nien_US
dc.typeArticleen_US
dc.identifier.emailDjurišić, AB: dalek@hku.hken_US
dc.identifier.emailXie, MH: mhxie@hku.hken_US
dc.identifier.authorityDjurišić, AB=rp00690en_US
dc.identifier.authorityXie, MH=rp00818en_US
dc.description.naturepublished_or_final_versionen_US
dc.identifier.doi10.1063/1.2081114en_US
dc.identifier.scopuseid_2-s2.0-27144472418en_US
dc.identifier.hkuros109853-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-27144472418&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume98en_US
dc.identifier.issue7en_US
dc.identifier.isiWOS:000232558200074-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridCai, XM=8923610200en_US
dc.identifier.scopusauthoridDjurišić, AB=7004904830en_US
dc.identifier.scopusauthoridXie, MH=7202255416en_US

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