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Article: Variable energy positron annihilation spectroscopy of GaN grown on sapphire substrates with MOCVD

TitleVariable energy positron annihilation spectroscopy of GaN grown on sapphire substrates with MOCVD
Authors
Issue Date2005
PublisherZhongguo Wuli Xuehui & Institute of Physics Publishing Ltd. The Journal's web site is located at http://www.iop.org/EJ/journal/CPL
Citation
Chinese Physics Letters, 2005, v. 22 n. 5, p. 1214-1217 How to Cite?
AbstractDepth profiled Doppler broadening of positron annihilation spectroscopy (DBPAS), which is also called the variable energy positron annihilation spectroscopy (VEPAS), is used in characterization of GaN grown on sapphire substrates with metal-organic chemical vapour deposition (MOCVD). The GaN film and the film/substrate interface are investigated. The VEPFIT (variable energy positron fit) software was used for analysing the data, and the positron diffusion length of the sapphire is obtained. The results suggest that there is a highly defected region near the GaN/sapphire interface. This thin dislocated region is generated at the film/substrate interface to relieve the strain. Effects of implantation dose on defect formation, for the GaN/Sapphire samples, which implanted by Al + ions, are also investigated. Studies on Al + implanted GaN films (not including the interface and sapphire) have revealed that there are two different regions of implantation damage. For the low Al + implantation dose samples, in the region close to the surface, defects are mainly composed of vacancy pairs with small amount of vacancy clusters, and in the interior region of the film the positron traps are vacancy clusters without micro-voids. For the highest dose sample, however, some positron trap centres are in the form of micro-voids in the second region. © 2005 Chinese Physical Society and IOP Publishing Ltd.
Persistent Identifierhttp://hdl.handle.net/10722/174956
ISSN
2015 Impact Factor: 0.875
2015 SCImago Journal Rankings: 0.278
References

 

DC FieldValueLanguage
dc.contributor.authorHu, YFen_HK
dc.contributor.authorBeling, CDen_HK
dc.contributor.authorFung, Sen_HK
dc.date.accessioned2012-11-26T08:48:21Z-
dc.date.available2012-11-26T08:48:21Z-
dc.date.issued2005en_HK
dc.identifier.citationChinese Physics Letters, 2005, v. 22 n. 5, p. 1214-1217en_HK
dc.identifier.issn0256-307Xen_HK
dc.identifier.urihttp://hdl.handle.net/10722/174956-
dc.description.abstractDepth profiled Doppler broadening of positron annihilation spectroscopy (DBPAS), which is also called the variable energy positron annihilation spectroscopy (VEPAS), is used in characterization of GaN grown on sapphire substrates with metal-organic chemical vapour deposition (MOCVD). The GaN film and the film/substrate interface are investigated. The VEPFIT (variable energy positron fit) software was used for analysing the data, and the positron diffusion length of the sapphire is obtained. The results suggest that there is a highly defected region near the GaN/sapphire interface. This thin dislocated region is generated at the film/substrate interface to relieve the strain. Effects of implantation dose on defect formation, for the GaN/Sapphire samples, which implanted by Al + ions, are also investigated. Studies on Al + implanted GaN films (not including the interface and sapphire) have revealed that there are two different regions of implantation damage. For the low Al + implantation dose samples, in the region close to the surface, defects are mainly composed of vacancy pairs with small amount of vacancy clusters, and in the interior region of the film the positron traps are vacancy clusters without micro-voids. For the highest dose sample, however, some positron trap centres are in the form of micro-voids in the second region. © 2005 Chinese Physical Society and IOP Publishing Ltd.en_HK
dc.languageengen_US
dc.publisherZhongguo Wuli Xuehui & Institute of Physics Publishing Ltd. The Journal's web site is located at http://www.iop.org/EJ/journal/CPLen_HK
dc.relation.ispartofChinese Physics Lettersen_HK
dc.titleVariable energy positron annihilation spectroscopy of GaN grown on sapphire substrates with MOCVDen_HK
dc.typeArticleen_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1088/0256-307X/22/5/053en_HK
dc.identifier.scopuseid_2-s2.0-24144431572en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-24144431572&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume22en_HK
dc.identifier.issue5en_HK
dc.identifier.spage1214en_HK
dc.identifier.epage1217en_HK
dc.publisher.placeChinaen_HK
dc.identifier.scopusauthoridHu, YF=7407119615en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.citeulike163005-

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