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Article: Depth Profiling of Si Oxidation States in Si-Implanted SiO 2 Films by X-Ray Photoelectron Spectroscopy

TitleDepth Profiling of Si Oxidation States in Si-Implanted SiO 2 Films by X-Ray Photoelectron Spectroscopy
Authors
KeywordsDepth Profiling
Si Ion Implantation
Si Nanocrystals
Si Oxidation States
Xps
Issue Date2003
PublisherInstitute of Pure and Applied Physics. The Journal's web site is located at http://www.ipap.jp/jjap/index.htm
Citation
Japanese Journal Of Applied Physics, Part 2: Letters, 2003, v. 42 n. 11 B, p. L1394-L1396 How to Cite?
AbstractThin SiO 2 films containing Si nanocrystals (nc-Si) prepared by low-energy Si ion implantation and high-temperature annealing, which are used in the application of single-electron memory devices, are studied by X-ray photoelectron spectroscopy (XPS). XPS analysis shows the existence of five Si oxidation states Si n+ (n =0, 1, 2, 3, and 4) in the SiO 2 films, indicating that not all of the implanted Si atoms are converted to nanocrystals during annealing and some of them form Si suboxides corresponding to the three oxidation states Si 2 (n = 1, 2 and 3). The relative concentration of each oxidation state at various depths is determined quantitatively by XPS analysis. In addition, the effects of annealing on both the oxidation states and their depth distributions are also studied.
Persistent Identifierhttp://hdl.handle.net/10722/174935
ISSN
2015 Impact Factor: 1.122
2015 SCImago Journal Rankings: 0.258
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorLiu, Yen_US
dc.contributor.authorFu, YQen_US
dc.contributor.authorChen, TPen_US
dc.contributor.authorTse, MSen_US
dc.contributor.authorFung, Sen_US
dc.contributor.authorHsieh, JHen_US
dc.contributor.authorYang, XHen_US
dc.date.accessioned2012-11-26T08:48:14Z-
dc.date.available2012-11-26T08:48:14Z-
dc.date.issued2003en_US
dc.identifier.citationJapanese Journal Of Applied Physics, Part 2: Letters, 2003, v. 42 n. 11 B, p. L1394-L1396en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://hdl.handle.net/10722/174935-
dc.description.abstractThin SiO 2 films containing Si nanocrystals (nc-Si) prepared by low-energy Si ion implantation and high-temperature annealing, which are used in the application of single-electron memory devices, are studied by X-ray photoelectron spectroscopy (XPS). XPS analysis shows the existence of five Si oxidation states Si n+ (n =0, 1, 2, 3, and 4) in the SiO 2 films, indicating that not all of the implanted Si atoms are converted to nanocrystals during annealing and some of them form Si suboxides corresponding to the three oxidation states Si 2 (n = 1, 2 and 3). The relative concentration of each oxidation state at various depths is determined quantitatively by XPS analysis. In addition, the effects of annealing on both the oxidation states and their depth distributions are also studied.en_US
dc.languageengen_US
dc.publisherInstitute of Pure and Applied Physics. The Journal's web site is located at http://www.ipap.jp/jjap/index.htmen_US
dc.relation.ispartofJapanese Journal of Applied Physics, Part 2: Lettersen_US
dc.subjectDepth Profilingen_US
dc.subjectSi Ion Implantationen_US
dc.subjectSi Nanocrystalsen_US
dc.subjectSi Oxidation Statesen_US
dc.subjectXpsen_US
dc.titleDepth Profiling of Si Oxidation States in Si-Implanted SiO 2 Films by X-Ray Photoelectron Spectroscopyen_US
dc.typeArticleen_US
dc.identifier.emailFung, S: sfung@hku.hken_US
dc.identifier.authorityFung, S=rp00695en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1143/JJAP.42.L1394-
dc.identifier.scopuseid_2-s2.0-1642454706en_US
dc.identifier.hkuros85087-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-1642454706&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume42en_US
dc.identifier.issue11 Ben_US
dc.identifier.spageL1394en_US
dc.identifier.epageL1396en_US
dc.identifier.isiWOS:000187509400016-
dc.publisher.placeJapanen_US
dc.identifier.scopusauthoridLiu, Y=36064444100en_US
dc.identifier.scopusauthoridFu, YQ=7404433406en_US
dc.identifier.scopusauthoridChen, TP=7405540443en_US
dc.identifier.scopusauthoridTse, MS=7103352646en_US
dc.identifier.scopusauthoridFung, S=7201970040en_US
dc.identifier.scopusauthoridHsieh, JH=26537549500en_US
dc.identifier.scopusauthoridYang, XH=7406503079en_US

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