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Article: Studies deep chromium acceptor levels in InP

TitleStudies deep chromium acceptor levels in InP
Authors
Issue Date1981
Citation
Journal Of Physics C: Solid State Physics, 1981, v. 14 n. 15, p. 2135-2146 How to Cite?
AbstractMeasurements of photoconductivity and secondary excitation spectra have been used to determine the position of the Cr acceptor level in InP. A pair of complementary photoconductive onsets have been observed at 0.40 eV at 300K (0.47 eV at 6K), and at 0.93 eV at both 300K and 6K, which result from the photoexcitation of electrons out of and into the Cr trap level. This level lies 0.40 eV (0.47 eV) below the conduction band edge 300K (6K), which accounts for the relatively low resistance of Cr-doped semi-insulating InP. The trap populations have been changed by using both neutron transmutation doping, and secondary bias illumination. A maximum in the photoconductivity spectrum at 0.81 eV is provisionally interpreted as an intracentre 5T 2-5E transition of Cr2+ (3d4), where the upper state is located above the conduction band edge.
Persistent Identifierhttp://hdl.handle.net/10722/174890
ISSN
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorFung, Sen_US
dc.contributor.authorNicholas, RJen_US
dc.date.accessioned2012-11-26T08:47:59Z-
dc.date.available2012-11-26T08:47:59Z-
dc.date.issued1981en_US
dc.identifier.citationJournal Of Physics C: Solid State Physics, 1981, v. 14 n. 15, p. 2135-2146en_US
dc.identifier.issn0022-3719en_US
dc.identifier.urihttp://hdl.handle.net/10722/174890-
dc.description.abstractMeasurements of photoconductivity and secondary excitation spectra have been used to determine the position of the Cr acceptor level in InP. A pair of complementary photoconductive onsets have been observed at 0.40 eV at 300K (0.47 eV at 6K), and at 0.93 eV at both 300K and 6K, which result from the photoexcitation of electrons out of and into the Cr trap level. This level lies 0.40 eV (0.47 eV) below the conduction band edge 300K (6K), which accounts for the relatively low resistance of Cr-doped semi-insulating InP. The trap populations have been changed by using both neutron transmutation doping, and secondary bias illumination. A maximum in the photoconductivity spectrum at 0.81 eV is provisionally interpreted as an intracentre 5T 2-5E transition of Cr2+ (3d4), where the upper state is located above the conduction band edge.en_US
dc.languageengen_US
dc.relation.ispartofJournal of Physics C: Solid State Physicsen_US
dc.titleStudies deep chromium acceptor levels in InPen_US
dc.typeArticleen_US
dc.identifier.emailFung, S: sfung@hku.hken_US
dc.identifier.authorityFung, S=rp00695en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1088/0022-3719/14/15/010en_US
dc.identifier.scopuseid_2-s2.0-0347854878en_US
dc.identifier.volume14en_US
dc.identifier.issue15en_US
dc.identifier.spage2135en_US
dc.identifier.epage2146en_US
dc.identifier.isiWOS:A1981LU74600010-
dc.identifier.scopusauthoridFung, S=7201970040en_US
dc.identifier.scopusauthoridNicholas, RJ=7102569757en_US

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