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Article: Arsenic incorporation and doping behaviour in silicon and SiGe epitaxial layers grovvn by gas source molecular beam epitaxy

TitleArsenic incorporation and doping behaviour in silicon and SiGe epitaxial layers grovvn by gas source molecular beam epitaxy
Authors
Issue Date1995
PublisherManey Publishing. The Journal's web site is located at http://www.maney.co.uk/search?fwaction=show&fwid=185
Citation
Materials Science And Technology, 1995, v. 11 n. 4, p. 396-399 How to Cite?
AbstractThe incorporation of As into epitaxial Si and SiGe grown by gas source molecular beam epitaxy using disilane (Si2H6), germane (GeH4), and arsine (AsH3) as hydride sources has been investigated. Reflection high energy electron diffraction (RHEED) studies, secondary ion mass spectroscopy (SIMS) profiles, and electrochemical capacitance voltage (ECV) analyses were used to characterise As incorporation. The As isfound to show surface segregation with a Gibbs energy of segregation of 0·45 eV at 600°C in Si and 0·30 eV at 560°C in SiGe as determinedfrom RHEED intensity oscillation measurements of the growth rate variation on As saturated surfaces. Competing segregation between Ge and As in As doped SiGe causes an increase in the Ge concentration in the alloy of approximately 10% relative to that of the undoped alloy. Whereas the equilibrium As concentration attainable in Si is of the order of6 × 10 17 cm -3, it can reach values higher than 10 19 cm -3 in SiGefor equivalent partial pressure ratios ofAsH 3 to Si 2H 6 and/or GeH 4. For these concentration levels and growth conditions SIMS and ECV data indicate a unity activation ratio for As in these epitaxial films. © 1995 The Institute of Materials.
Persistent Identifierhttp://hdl.handle.net/10722/174874
ISSN
2015 Impact Factor: 1.008
2015 SCImago Journal Rankings: 0.668
References

 

DC FieldValueLanguage
dc.contributor.authorFernandez, JMen_US
dc.contributor.authorXie, MHen_US
dc.contributor.authorMatsumura, Aen_US
dc.contributor.authorMokler, SMen_US
dc.contributor.authorZhang, Jen_US
dc.contributor.authorJoyce, BAen_US
dc.date.accessioned2012-11-26T08:47:55Z-
dc.date.available2012-11-26T08:47:55Z-
dc.date.issued1995en_US
dc.identifier.citationMaterials Science And Technology, 1995, v. 11 n. 4, p. 396-399en_US
dc.identifier.issn0267-0836en_US
dc.identifier.urihttp://hdl.handle.net/10722/174874-
dc.description.abstractThe incorporation of As into epitaxial Si and SiGe grown by gas source molecular beam epitaxy using disilane (Si2H6), germane (GeH4), and arsine (AsH3) as hydride sources has been investigated. Reflection high energy electron diffraction (RHEED) studies, secondary ion mass spectroscopy (SIMS) profiles, and electrochemical capacitance voltage (ECV) analyses were used to characterise As incorporation. The As isfound to show surface segregation with a Gibbs energy of segregation of 0·45 eV at 600°C in Si and 0·30 eV at 560°C in SiGe as determinedfrom RHEED intensity oscillation measurements of the growth rate variation on As saturated surfaces. Competing segregation between Ge and As in As doped SiGe causes an increase in the Ge concentration in the alloy of approximately 10% relative to that of the undoped alloy. Whereas the equilibrium As concentration attainable in Si is of the order of6 × 10 17 cm -3, it can reach values higher than 10 19 cm -3 in SiGefor equivalent partial pressure ratios ofAsH 3 to Si 2H 6 and/or GeH 4. For these concentration levels and growth conditions SIMS and ECV data indicate a unity activation ratio for As in these epitaxial films. © 1995 The Institute of Materials.en_US
dc.languageengen_US
dc.publisherManey Publishing. The Journal's web site is located at http://www.maney.co.uk/search?fwaction=show&fwid=185en_US
dc.relation.ispartofMaterials Science and Technologyen_US
dc.titleArsenic incorporation and doping behaviour in silicon and SiGe epitaxial layers grovvn by gas source molecular beam epitaxyen_US
dc.typeArticleen_US
dc.identifier.emailXie, MH: mhxie@hku.hken_US
dc.identifier.authorityXie, MH=rp00818en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0342814199en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0342814199&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume11en_US
dc.identifier.issue4en_US
dc.identifier.spage396en_US
dc.identifier.epage399en_US
dc.publisher.placeUnited Kingdomen_US
dc.identifier.scopusauthoridFernandez, JM=7404575272en_US
dc.identifier.scopusauthoridXie, MH=7202255416en_US
dc.identifier.scopusauthoridMatsumura, A=7103092678en_US
dc.identifier.scopusauthoridMokler, SM=6603054444en_US
dc.identifier.scopusauthoridZhang, J=7601345343en_US
dc.identifier.scopusauthoridJoyce, BA=7102210065en_US

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