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Article: Temperature dependence of the low-field mobility of a very narrow miniband in the degenerate case

TitleTemperature dependence of the low-field mobility of a very narrow miniband in the degenerate case
Authors
Issue Date1996
PublisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/physleta
Citation
Physics Letters, Section A: General, Atomic And Solid State Physics, 1996, v. 212 n. 1-2, p. 97-102 How to Cite?
AbstractPerpendicular transport in a specially designed, doped and weakly coupled GaAs/AlAs superlattice is investigated. A linear current-voltage at a bias within ± 10 mV and a negative differential velocity effect at a bias of about ± 40 mV are observed at low temperatures. The miniband conductance near zero electric field is studied as a function of temperature. It is found that the measured conductance increases slightly as the temperature increases to about 30 K, decreases as the temperature rises from 30 K to 70 K, and then increases strongly above 70 K, indicating the existence of a mobility gap.
Persistent Identifierhttp://hdl.handle.net/10722/174869
ISSN
2015 Impact Factor: 1.677
2015 SCImago Journal Rankings: 0.755
References

 

DC FieldValueLanguage
dc.contributor.authorXu, SJen_US
dc.contributor.authorLiu, Jen_US
dc.contributor.authorZheng, HZen_US
dc.contributor.authorChua, SJen_US
dc.contributor.authorLi, YXen_US
dc.contributor.authorCheng, WCen_US
dc.contributor.authorZhang, PHen_US
dc.contributor.authorYang, XPen_US
dc.date.accessioned2012-11-26T08:47:54Z-
dc.date.available2012-11-26T08:47:54Z-
dc.date.issued1996en_US
dc.identifier.citationPhysics Letters, Section A: General, Atomic And Solid State Physics, 1996, v. 212 n. 1-2, p. 97-102en_US
dc.identifier.issn0375-9601en_US
dc.identifier.urihttp://hdl.handle.net/10722/174869-
dc.description.abstractPerpendicular transport in a specially designed, doped and weakly coupled GaAs/AlAs superlattice is investigated. A linear current-voltage at a bias within ± 10 mV and a negative differential velocity effect at a bias of about ± 40 mV are observed at low temperatures. The miniband conductance near zero electric field is studied as a function of temperature. It is found that the measured conductance increases slightly as the temperature increases to about 30 K, decreases as the temperature rises from 30 K to 70 K, and then increases strongly above 70 K, indicating the existence of a mobility gap.en_US
dc.languageengen_US
dc.publisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/physletaen_US
dc.relation.ispartofPhysics Letters, Section A: General, Atomic and Solid State Physicsen_US
dc.titleTemperature dependence of the low-field mobility of a very narrow miniband in the degenerate caseen_US
dc.typeArticleen_US
dc.identifier.emailXu, SJ: sjxu@hku.hken_US
dc.identifier.authorityXu, SJ=rp00821en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0042629709en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0042629709&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume212en_US
dc.identifier.issue1-2en_US
dc.identifier.spage97en_US
dc.identifier.epage102en_US
dc.publisher.placeNetherlandsen_US
dc.identifier.scopusauthoridXu, SJ=7404439005en_US
dc.identifier.scopusauthoridLiu, J=36077311800en_US
dc.identifier.scopusauthoridZheng, HZ=7403440708en_US
dc.identifier.scopusauthoridChua, SJ=35516064500en_US
dc.identifier.scopusauthoridLi, YX=26021357200en_US
dc.identifier.scopusauthoridCheng, WC=7402169417en_US
dc.identifier.scopusauthoridZhang, PH=7404159733en_US
dc.identifier.scopusauthoridYang, XP=7406502463en_US

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