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Article: Study on (√3 × √3) R 30° reconstruction of 6H-SiC(0001) surface by atleed

TitleStudy on (√3 × √3) R 30° reconstruction of 6H-SiC(0001) surface by atleed
Authors
Keywords6H-Sic(0001)
Leed
Surface Reconstruction
Surface Termination
Issue Date2001
PublisherKexue Chubanshe. The Journal's web site is located at http://g203.iphy.ac.cn/wulixb/
Citation
Wuli Xuebao/Acta Physica Sinica, 2001, v. 50 n. 1, p. 109-110 How to Cite?
AbstractThe result on 6H-SiC(0001)-(√3 × √3) R 30° surface obtained by low-energy electron diffraction(LEED) shows that 1/3 monolayer Si atoms were absorbed on T 4 hollow sites and bonded to three Si atoms in the first SiC bilayer with a distance of 0.171nm. The calculation result of ATLEED shows that the ratio of three different surface terminations, distinguished by the stacking fault sequence of SiC bilayers, in the "best-fit structure" obtained by analysis of 10 non-equivalent normal incidence beam sets is S1 : S2 : S3 = 15 : 15 : 70. The values of average R VHT = 0.165 and R P = 0.142 indicate that the surface growth was consistent with the mechanism of step-flow growth corresponding to total energy minimum.
Persistent Identifierhttp://hdl.handle.net/10722/174868
ISSN
2015 Impact Factor: 0.677
2015 SCImago Journal Rankings: 0.156
References

 

DC FieldValueLanguage
dc.contributor.authorDeng, BCen_US
dc.contributor.authorChen, Yen_US
dc.contributor.authorXu, Gen_US
dc.contributor.authorChen, WHen_US
dc.contributor.authorHe, YJen_US
dc.contributor.authorXie, MHen_US
dc.contributor.authorTang, SXen_US
dc.date.accessioned2012-11-26T08:47:53Z-
dc.date.available2012-11-26T08:47:53Z-
dc.date.issued2001en_US
dc.identifier.citationWuli Xuebao/Acta Physica Sinica, 2001, v. 50 n. 1, p. 109-110en_US
dc.identifier.issn1000-3290en_US
dc.identifier.urihttp://hdl.handle.net/10722/174868-
dc.description.abstractThe result on 6H-SiC(0001)-(√3 × √3) R 30° surface obtained by low-energy electron diffraction(LEED) shows that 1/3 monolayer Si atoms were absorbed on T 4 hollow sites and bonded to three Si atoms in the first SiC bilayer with a distance of 0.171nm. The calculation result of ATLEED shows that the ratio of three different surface terminations, distinguished by the stacking fault sequence of SiC bilayers, in the "best-fit structure" obtained by analysis of 10 non-equivalent normal incidence beam sets is S1 : S2 : S3 = 15 : 15 : 70. The values of average R VHT = 0.165 and R P = 0.142 indicate that the surface growth was consistent with the mechanism of step-flow growth corresponding to total energy minimum.en_US
dc.languageengen_US
dc.publisherKexue Chubanshe. The Journal's web site is located at http://g203.iphy.ac.cn/wulixb/en_US
dc.relation.ispartofWuli Xuebao/Acta Physica Sinicaen_US
dc.subject6H-Sic(0001)en_US
dc.subjectLeeden_US
dc.subjectSurface Reconstructionen_US
dc.subjectSurface Terminationen_US
dc.titleStudy on (√3 × √3) R 30° reconstruction of 6H-SiC(0001) surface by atleeden_US
dc.typeArticleen_US
dc.identifier.emailXie, MH: mhxie@hku.hken_US
dc.identifier.authorityXie, MH=rp00818en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0042338467en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0042338467&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume50en_US
dc.identifier.issue1en_US
dc.identifier.spage109en_US
dc.identifier.epage110en_US
dc.publisher.placeChinaen_US
dc.identifier.scopusauthoridDeng, BC=7101938147en_US
dc.identifier.scopusauthoridChen, Y=36071535900en_US
dc.identifier.scopusauthoridXu, G=7404263906en_US
dc.identifier.scopusauthoridChen, WH=7409644692en_US
dc.identifier.scopusauthoridHe, YJ=24476460300en_US
dc.identifier.scopusauthoridXie, MH=7202255416en_US
dc.identifier.scopusauthoridTang, SX=7403436639en_US

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