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Article: Study on (√3 × √3) R 30° reconstruction of 6H-SiC(0001) surface by atleed
Title | Study on (√3 × √3) R 30° reconstruction of 6H-SiC(0001) surface by atleed |
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Authors | |
Keywords | 6H-Sic(0001) Leed Surface Reconstruction Surface Termination |
Issue Date | 2001 |
Publisher | Kexue Chubanshe. The Journal's web site is located at http://g203.iphy.ac.cn/wulixb/ |
Citation | Wuli Xuebao/Acta Physica Sinica, 2001, v. 50 n. 1, p. 109-110 How to Cite? |
Abstract | The result on 6H-SiC(0001)-(√3 × √3) R 30° surface obtained by low-energy electron diffraction(LEED) shows that 1/3 monolayer Si atoms were absorbed on T 4 hollow sites and bonded to three Si atoms in the first SiC bilayer with a distance of 0.171nm. The calculation result of ATLEED shows that the ratio of three different surface terminations, distinguished by the stacking fault sequence of SiC bilayers, in the "best-fit structure" obtained by analysis of 10 non-equivalent normal incidence beam sets is S1 : S2 : S3 = 15 : 15 : 70. The values of average R VHT = 0.165 and R P = 0.142 indicate that the surface growth was consistent with the mechanism of step-flow growth corresponding to total energy minimum. |
Persistent Identifier | http://hdl.handle.net/10722/174868 |
ISSN | 2023 Impact Factor: 0.8 2023 SCImago Journal Rankings: 0.214 |
References |
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Deng, BC | en_US |
dc.contributor.author | Chen, Y | en_US |
dc.contributor.author | Xu, G | en_US |
dc.contributor.author | Chen, WH | en_US |
dc.contributor.author | He, YJ | en_US |
dc.contributor.author | Xie, MH | en_US |
dc.contributor.author | Tang, SX | en_US |
dc.date.accessioned | 2012-11-26T08:47:53Z | - |
dc.date.available | 2012-11-26T08:47:53Z | - |
dc.date.issued | 2001 | en_US |
dc.identifier.citation | Wuli Xuebao/Acta Physica Sinica, 2001, v. 50 n. 1, p. 109-110 | en_US |
dc.identifier.issn | 1000-3290 | en_US |
dc.identifier.uri | http://hdl.handle.net/10722/174868 | - |
dc.description.abstract | The result on 6H-SiC(0001)-(√3 × √3) R 30° surface obtained by low-energy electron diffraction(LEED) shows that 1/3 monolayer Si atoms were absorbed on T 4 hollow sites and bonded to three Si atoms in the first SiC bilayer with a distance of 0.171nm. The calculation result of ATLEED shows that the ratio of three different surface terminations, distinguished by the stacking fault sequence of SiC bilayers, in the "best-fit structure" obtained by analysis of 10 non-equivalent normal incidence beam sets is S1 : S2 : S3 = 15 : 15 : 70. The values of average R VHT = 0.165 and R P = 0.142 indicate that the surface growth was consistent with the mechanism of step-flow growth corresponding to total energy minimum. | en_US |
dc.language | eng | en_US |
dc.publisher | Kexue Chubanshe. The Journal's web site is located at http://g203.iphy.ac.cn/wulixb/ | en_US |
dc.relation.ispartof | Wuli Xuebao/Acta Physica Sinica | en_US |
dc.subject | 6H-Sic(0001) | en_US |
dc.subject | Leed | en_US |
dc.subject | Surface Reconstruction | en_US |
dc.subject | Surface Termination | en_US |
dc.title | Study on (√3 × √3) R 30° reconstruction of 6H-SiC(0001) surface by atleed | en_US |
dc.type | Article | en_US |
dc.identifier.email | Xie, MH: mhxie@hku.hk | en_US |
dc.identifier.authority | Xie, MH=rp00818 | en_US |
dc.description.nature | link_to_subscribed_fulltext | en_US |
dc.identifier.scopus | eid_2-s2.0-0042338467 | en_US |
dc.relation.references | http://www.scopus.com/mlt/select.url?eid=2-s2.0-0042338467&selection=ref&src=s&origin=recordpage | en_US |
dc.identifier.volume | 50 | en_US |
dc.identifier.issue | 1 | en_US |
dc.identifier.spage | 109 | en_US |
dc.identifier.epage | 110 | en_US |
dc.publisher.place | China | en_US |
dc.identifier.scopusauthorid | Deng, BC=7101938147 | en_US |
dc.identifier.scopusauthorid | Chen, Y=36071535900 | en_US |
dc.identifier.scopusauthorid | Xu, G=7404263906 | en_US |
dc.identifier.scopusauthorid | Chen, WH=7409644692 | en_US |
dc.identifier.scopusauthorid | He, YJ=24476460300 | en_US |
dc.identifier.scopusauthorid | Xie, MH=7202255416 | en_US |
dc.identifier.scopusauthorid | Tang, SX=7403436639 | en_US |
dc.identifier.issnl | 1000-3290 | - |