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Article: Microstructure of the Au/GaAs(110) interface probed using a variable-energy positron beam

TitleMicrostructure of the Au/GaAs(110) interface probed using a variable-energy positron beam
Authors
Issue Date1994
PublisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/Journals/jpcm
Citation
Journal Of Physics: Condensed Matter, 1994, v. 6 n. 6, p. 1133-1147 How to Cite?
AbstractA mono-energetic positron beam is used to probe the Au/GaAs(110) interface by observing the Doppler broadening of the annihilation radiation as a function of beam energy. The observed data are fitted well by a three-layer model in which the intermediate layer absorbs positrons. The annihilation radiation from this region indicates that it possesses open volume defects. This intermediate layer is attributed to both the Au-Ga alloyed structure (of approximately 100 AA width) that forms close to the expected interface position as a result of atomic intermixing and an extended adjacent defected area in the An overlayer resulting from Ga and As outmigration. The nature of the defects in these regions is discussed. While evidence is found for Au induced dissociation of the GaAs lattice, the present data are not sufficiently sensitive to give any definite conclusion regarding the presence or absence of vacancy type defects in the near-interface region of the substrate.
Persistent Identifierhttp://hdl.handle.net/10722/174851
ISSN
2015 Impact Factor: 2.209
2015 SCImago Journal Rankings: 0.812
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorLing, CCen_HK
dc.contributor.authorLee, TCen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorBeling, CDen_HK
dc.contributor.authorWeng, Hen_HK
dc.contributor.authorXu, Jen_HK
dc.contributor.authorSun, Sen_HK
dc.contributor.authorHan, Ren_HK
dc.date.accessioned2012-11-26T08:47:48Z-
dc.date.available2012-11-26T08:47:48Z-
dc.date.issued1994en_HK
dc.identifier.citationJournal Of Physics: Condensed Matter, 1994, v. 6 n. 6, p. 1133-1147en_HK
dc.identifier.issn0953-8984en_HK
dc.identifier.urihttp://hdl.handle.net/10722/174851-
dc.description.abstractA mono-energetic positron beam is used to probe the Au/GaAs(110) interface by observing the Doppler broadening of the annihilation radiation as a function of beam energy. The observed data are fitted well by a three-layer model in which the intermediate layer absorbs positrons. The annihilation radiation from this region indicates that it possesses open volume defects. This intermediate layer is attributed to both the Au-Ga alloyed structure (of approximately 100 AA width) that forms close to the expected interface position as a result of atomic intermixing and an extended adjacent defected area in the An overlayer resulting from Ga and As outmigration. The nature of the defects in these regions is discussed. While evidence is found for Au induced dissociation of the GaAs lattice, the present data are not sufficiently sensitive to give any definite conclusion regarding the presence or absence of vacancy type defects in the near-interface region of the substrate.en_HK
dc.languageengen_US
dc.publisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/Journals/jpcmen_HK
dc.relation.ispartofJournal of Physics: Condensed Matteren_HK
dc.titleMicrostructure of the Au/GaAs(110) interface probed using a variable-energy positron beamen_HK
dc.typeArticleen_HK
dc.identifier.emailLing, CC: ccling@hkucc.hku.hken_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.authorityLing, CC=rp00747en_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1088/0953-8984/6/6/017en_HK
dc.identifier.scopuseid_2-s2.0-0039825268en_HK
dc.identifier.volume6en_HK
dc.identifier.issue6en_HK
dc.identifier.spage1133en_HK
dc.identifier.epage1147en_HK
dc.identifier.isiWOS:A1994MV98400017-
dc.publisher.placeUnited Kingdomen_HK
dc.identifier.scopusauthoridLing, CC=13310239300en_HK
dc.identifier.scopusauthoridLee, TC=36347141200en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK
dc.identifier.scopusauthoridWeng, H=7102468725en_HK
dc.identifier.scopusauthoridXu, J=7407004559en_HK
dc.identifier.scopusauthoridSun, S=36800480400en_HK
dc.identifier.scopusauthoridHan, R=7202457519en_HK

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