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Article: Post-breakdown conduction instability of ultrathin SiO 2 films observed in ramped-current and ramped-voltage current-voltage measurements

TitlePost-breakdown conduction instability of ultrathin SiO 2 films observed in ramped-current and ramped-voltage current-voltage measurements
Authors
KeywordsConduction Instability
I-V Characteristics
Percolation Model
Power Law
Silicon Dioxide Films
Issue Date2002
PublisherInstitute of Pure and Applied Physics. The Journal's web site is located at http://www.ipap.jp/jjap/index.htm
Citation
Japanese Journal Of Applied Physics, Part 1: Regular Papers And Short Notes And Review Papers, 2002, v. 41 n. 5 A, p. 3047-3051 How to Cite?
AbstractRamped-current and ramped-voltage current-voltage (I-V) measurements were carried out to investigate the conduction in ultrathin SiO 2 films after breakdown, and all the I-V characteristics were plotted on a log-log scale to examine the power law behavior. In most cases, the conduction was stable, and the two measurements yielded identical I-V characteristics. However, in some cases, two phenomena exhibiting instability, i.e., the current switching and voltage switching between two well-defined states, were observed in the ramped-voltage and ramped-current measurements, respectively. For both the stable conduction with a single conduction state and the unstable conduction which involved different states, a linear relationship was observed in the log-log scale I-V characteristics for each state, indicating that each state followed a power law. The conduction instability is explained by a model based on the percolation concept.
Persistent Identifierhttp://hdl.handle.net/10722/174826
ISSN
2015 Impact Factor: 1.122
2015 SCImago Journal Rankings: 0.258
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorChen, TPen_US
dc.contributor.authorTse, MSen_US
dc.contributor.authorSun, CQen_US
dc.contributor.authorFung, Sen_US
dc.date.accessioned2012-11-26T08:47:42Z-
dc.date.available2012-11-26T08:47:42Z-
dc.date.issued2002en_US
dc.identifier.citationJapanese Journal Of Applied Physics, Part 1: Regular Papers And Short Notes And Review Papers, 2002, v. 41 n. 5 A, p. 3047-3051en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://hdl.handle.net/10722/174826-
dc.description.abstractRamped-current and ramped-voltage current-voltage (I-V) measurements were carried out to investigate the conduction in ultrathin SiO 2 films after breakdown, and all the I-V characteristics were plotted on a log-log scale to examine the power law behavior. In most cases, the conduction was stable, and the two measurements yielded identical I-V characteristics. However, in some cases, two phenomena exhibiting instability, i.e., the current switching and voltage switching between two well-defined states, were observed in the ramped-voltage and ramped-current measurements, respectively. For both the stable conduction with a single conduction state and the unstable conduction which involved different states, a linear relationship was observed in the log-log scale I-V characteristics for each state, indicating that each state followed a power law. The conduction instability is explained by a model based on the percolation concept.en_US
dc.languageengen_US
dc.publisherInstitute of Pure and Applied Physics. The Journal's web site is located at http://www.ipap.jp/jjap/index.htmen_US
dc.relation.ispartofJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papersen_US
dc.subjectConduction Instabilityen_US
dc.subjectI-V Characteristicsen_US
dc.subjectPercolation Modelen_US
dc.subjectPower Lawen_US
dc.subjectSilicon Dioxide Filmsen_US
dc.titlePost-breakdown conduction instability of ultrathin SiO 2 films observed in ramped-current and ramped-voltage current-voltage measurementsen_US
dc.typeArticleen_US
dc.identifier.emailFung, S: sfung@hku.hken_US
dc.identifier.authorityFung, S=rp00695en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1143/JJAP.41.3047-
dc.identifier.scopuseid_2-s2.0-0036578232en_US
dc.identifier.hkuros66633-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0036578232&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume41en_US
dc.identifier.issue5 Aen_US
dc.identifier.spage3047en_US
dc.identifier.epage3051en_US
dc.identifier.isiWOS:000176515700055-
dc.publisher.placeJapanen_US
dc.identifier.scopusauthoridChen, TP=7405540443en_US
dc.identifier.scopusauthoridTse, MS=7103352646en_US
dc.identifier.scopusauthoridSun, CQ=7404248313en_US
dc.identifier.scopusauthoridFung, S=7201970040en_US

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