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Article: Power-law dependence of charge trapping on injected charge in very thin SiO 2 films

TitlePower-law dependence of charge trapping on injected charge in very thin SiO 2 films
Authors
KeywordsCharge Trapping
Fowler-Nordheim Injection
Power-Law Behavior
Thin Oxide
Tunneling Current
Issue Date2002
PublisherInstitute of Pure and Applied Physics. The Journal's web site is located at http://www.ipap.jp/jjap/index.htm
Citation
Japanese Journal Of Applied Physics, Part 2: Letters, 2002, v. 41 n. 4 A, p. L384-L386 How to Cite?
AbstractIn this letter, we report a novel approach to quantitative determination of charge trapping in gate oxide caused by high field stress. Our approach is to analyze the small but significant change in the post-stress FN tunneling current through the oxide layer based on the assumption that the change in the tunneling current is due to the changes of both the oxide field and the oxide barrier heights caused by charge trapping in the oxide and at the interfaces. It is found that, regardless of injection directions and measurement polarities, the charge trapping always follows a power law of the form Q inj n with n ≈ 0.1 to 0.4, where Q inj is the injected charge dose.
Persistent Identifierhttp://hdl.handle.net/10722/174825
ISSN
2015 Impact Factor: 1.122
2015 SCImago Journal Rankings: 0.258
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorLiu, Yen_US
dc.contributor.authorChen, TPen_US
dc.contributor.authorAng, CHen_US
dc.contributor.authorFung, Sen_US
dc.date.accessioned2012-11-26T08:47:42Z-
dc.date.available2012-11-26T08:47:42Z-
dc.date.issued2002en_US
dc.identifier.citationJapanese Journal Of Applied Physics, Part 2: Letters, 2002, v. 41 n. 4 A, p. L384-L386en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://hdl.handle.net/10722/174825-
dc.description.abstractIn this letter, we report a novel approach to quantitative determination of charge trapping in gate oxide caused by high field stress. Our approach is to analyze the small but significant change in the post-stress FN tunneling current through the oxide layer based on the assumption that the change in the tunneling current is due to the changes of both the oxide field and the oxide barrier heights caused by charge trapping in the oxide and at the interfaces. It is found that, regardless of injection directions and measurement polarities, the charge trapping always follows a power law of the form Q inj n with n ≈ 0.1 to 0.4, where Q inj is the injected charge dose.en_US
dc.languageengen_US
dc.publisherInstitute of Pure and Applied Physics. The Journal's web site is located at http://www.ipap.jp/jjap/index.htmen_US
dc.relation.ispartofJapanese Journal of Applied Physics, Part 2: Lettersen_US
dc.subjectCharge Trappingen_US
dc.subjectFowler-Nordheim Injectionen_US
dc.subjectPower-Law Behavioren_US
dc.subjectThin Oxideen_US
dc.subjectTunneling Currenten_US
dc.titlePower-law dependence of charge trapping on injected charge in very thin SiO 2 filmsen_US
dc.typeArticleen_US
dc.identifier.emailFung, S: sfung@hku.hken_US
dc.identifier.authorityFung, S=rp00695en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1143/JJAP.41.L384-
dc.identifier.scopuseid_2-s2.0-0036544437en_US
dc.identifier.hkuros72538-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0036544437&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume41en_US
dc.identifier.issue4 Aen_US
dc.identifier.spageL384en_US
dc.identifier.epageL386en_US
dc.identifier.isiWOS:000176444500007-
dc.publisher.placeJapanen_US
dc.identifier.scopusauthoridLiu, Y=36064444100en_US
dc.identifier.scopusauthoridChen, TP=7405540443en_US
dc.identifier.scopusauthoridAng, CH=7102878370en_US
dc.identifier.scopusauthoridFung, S=7201970040en_US

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