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Article: The atomic structure of Si(111)-(√3 x √3)R30°-Ga determined by automated tensor leed

TitleThe atomic structure of Si(111)-(√3 x √3)R30°-Ga determined by automated tensor leed
Authors
Issue Date2000
PublisherWorld Scientific Publishing Co Pte Ltd. The Journal's web site is located at http://www.worldscinet.com/srl/srl.shtml
Citation
Surface Review And Letters, 2000, v. 7 n. 3, p. 267-270 How to Cite?
AbstractThe atomic structure of the Si(111)-(√3 x √3)R30°-Ga surface has been studied by comparing measured low-energy electron diffraction (LEED) intensity (IV) curves with calculated IV spectra using the method of automated tensor LEED. The experimental LEED IV curves used in this work contain many beams and a wide energy range. The results show that the Ga atoms occupy T4 sites, at 2.62 Å above the second-atomic-layer Si atoms. The Ga-Si vertical spacing is 1.44 Å and the bond length between the Ga atom and the first-layer Si atom is 2.52 Å. Large bucklings are found in the first and second Si bilayers below the adatom layer.
Persistent Identifierhttp://hdl.handle.net/10722/174787
ISSN
2015 Impact Factor: 0.435
2015 SCImago Journal Rankings: 0.156
References

 

DC FieldValueLanguage
dc.contributor.authorChen, Wen_US
dc.contributor.authorWu, Hen_US
dc.contributor.authorHo, WKen_US
dc.contributor.authorDeng, BCen_US
dc.contributor.authorXu, Gen_US
dc.contributor.authorTong, SYen_US
dc.date.accessioned2012-11-26T08:47:26Z-
dc.date.available2012-11-26T08:47:26Z-
dc.date.issued2000en_US
dc.identifier.citationSurface Review And Letters, 2000, v. 7 n. 3, p. 267-270en_US
dc.identifier.issn0218-625Xen_US
dc.identifier.urihttp://hdl.handle.net/10722/174787-
dc.description.abstractThe atomic structure of the Si(111)-(√3 x √3)R30°-Ga surface has been studied by comparing measured low-energy electron diffraction (LEED) intensity (IV) curves with calculated IV spectra using the method of automated tensor LEED. The experimental LEED IV curves used in this work contain many beams and a wide energy range. The results show that the Ga atoms occupy T4 sites, at 2.62 Å above the second-atomic-layer Si atoms. The Ga-Si vertical spacing is 1.44 Å and the bond length between the Ga atom and the first-layer Si atom is 2.52 Å. Large bucklings are found in the first and second Si bilayers below the adatom layer.en_US
dc.languageengen_US
dc.publisherWorld Scientific Publishing Co Pte Ltd. The Journal's web site is located at http://www.worldscinet.com/srl/srl.shtmlen_US
dc.relation.ispartofSurface Review and Lettersen_US
dc.titleThe atomic structure of Si(111)-(√3 x √3)R30°-Ga determined by automated tensor leed-
dc.typeArticleen_US
dc.identifier.emailWu, H: hswu@hkucc.hku.hken_US
dc.identifier.authorityWu, H=rp00813en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1016/S0218-625X(00)00035-Xen_US
dc.identifier.scopuseid_2-s2.0-0033809191en_US
dc.identifier.hkuros55921-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0033809191&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume7en_US
dc.identifier.issue3en_US
dc.identifier.spage267en_US
dc.identifier.epage270en_US
dc.publisher.placeSingaporeen_US
dc.identifier.scopusauthoridChen, W=7409644692en_US
dc.identifier.scopusauthoridWu, H=7405584367en_US
dc.identifier.scopusauthoridHo, WK=18040061300en_US
dc.identifier.scopusauthoridDeng, BC=7101938147en_US
dc.identifier.scopusauthoridXu, G=7404263906en_US
dc.identifier.scopusauthoridTong, SY=8725237900en_US

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