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Article: Modelling the optical constants of GaAs: excitonic effects at E1, E1 + Δ1 critical points

TitleModelling the optical constants of GaAs: excitonic effects at E1, E1 + Δ1 critical points
Authors
Issue Date1999
PublisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/sst
Citation
Semiconductor Science And Technology, 1999, v. 14 n. 11, p. 958-960 How to Cite?
AbstractCalculation of the optical constants of GaAs is presented. In this work we do not take into account excitonic effects at E1 and E1 + Δ1 critical points. In such a manner, fewer adjustable model parameters are required and the term with dubious physical interpretation describing excitons at E1 and E1 + Δ1 is left out. Reasons for exclusion of this term are discussed in detail. In spite of the fewer terms describing the contributions of different transitions to the dielectric function, we obtain excellent agreement with experimental data over the entire 0.125-6 eV range, with relative rms error for the refractive index equal to 2.6%.
Persistent Identifierhttp://hdl.handle.net/10722/174785
ISSN
2015 Impact Factor: 2.098
2015 SCImago Journal Rankings: 0.676
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorDjurišić, ABen_US
dc.contributor.authorLi, EHen_US
dc.date.accessioned2012-11-26T08:47:25Z-
dc.date.available2012-11-26T08:47:25Z-
dc.date.issued1999en_US
dc.identifier.citationSemiconductor Science And Technology, 1999, v. 14 n. 11, p. 958-960en_US
dc.identifier.issn0268-1242en_US
dc.identifier.urihttp://hdl.handle.net/10722/174785-
dc.description.abstractCalculation of the optical constants of GaAs is presented. In this work we do not take into account excitonic effects at E1 and E1 + Δ1 critical points. In such a manner, fewer adjustable model parameters are required and the term with dubious physical interpretation describing excitons at E1 and E1 + Δ1 is left out. Reasons for exclusion of this term are discussed in detail. In spite of the fewer terms describing the contributions of different transitions to the dielectric function, we obtain excellent agreement with experimental data over the entire 0.125-6 eV range, with relative rms error for the refractive index equal to 2.6%.en_US
dc.languageengen_US
dc.publisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/ssten_US
dc.relation.ispartofSemiconductor Science and Technologyen_US
dc.titleModelling the optical constants of GaAs: excitonic effects at E1, E1 + Δ1 critical pointsen_US
dc.typeArticleen_US
dc.identifier.emailDjurišić, AB: dalek@hku.hken_US
dc.identifier.authorityDjurišić, AB=rp00690en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1088/0268-1242/14/11/302en_US
dc.identifier.scopuseid_2-s2.0-0033338357en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0033338357&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume14en_US
dc.identifier.issue11en_US
dc.identifier.spage958en_US
dc.identifier.epage960en_US
dc.identifier.isiWOS:000083630700006-
dc.publisher.placeUnited Kingdomen_US
dc.identifier.scopusauthoridDjurišić, AB=7004904830en_US
dc.identifier.scopusauthoridLi, EH=7201410087en_US

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