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Article: Modeling the optical constants of wide bandgap materials

TitleModeling the optical constants of wide bandgap materials
Authors
Issue Date1999
PublisherS P I E - International Society for Optical Engineering. The Journal's web site is located at http://spie.org/x1848.xml
Citation
Proceedings Of Spie - The International Society For Optical Engineering, 1999, v. 3625, p. 49-56 How to Cite?
AbstractCalculations of the optical constants of hexagonal GaN (in the range 1-10 eV), InN (in the range 2-20 eV), AlN (in the range 6-20 eV) and 6H-SiC (in the range 1-30 eV) for the component perpendicular to the c axis are presented. The employed model is modified Adachi's model of the optical properties of semiconductors. In the employed model, damping constant Γ describing broadening phenomenon is replaced with the frequency dependent expression Γ(ω). In such a manner, type of broadening represents adjustable parameter of the model, allowing broadening to vary over a range of functions with similar kernels but different wings. Excellent agreement with experimental data is obtained for all investigated materials. Obtained relative rms errors for the real and imaginary parts of the index of refraction are equal to 3.5% and 5.2% for 6H-SiC in the 1-30 eV range, 1.7% and 4.1% for GaN in the 1.5-10 eV range, 1.2% and 2.5% for InN in the 2-10 eV range and 1.5% and 1.9% for AlN in the 6-20 eV range.
Persistent Identifierhttp://hdl.handle.net/10722/174777
ISSN

 

DC FieldValueLanguage
dc.contributor.authorDjurisic, Aleksandra Ben_US
dc.contributor.authorTsang, KwokOnen_US
dc.contributor.authorLi, EHerberten_US
dc.date.accessioned2012-11-26T08:47:23Z-
dc.date.available2012-11-26T08:47:23Z-
dc.date.issued1999en_US
dc.identifier.citationProceedings Of Spie - The International Society For Optical Engineering, 1999, v. 3625, p. 49-56en_US
dc.identifier.issn0277-786Xen_US
dc.identifier.urihttp://hdl.handle.net/10722/174777-
dc.description.abstractCalculations of the optical constants of hexagonal GaN (in the range 1-10 eV), InN (in the range 2-20 eV), AlN (in the range 6-20 eV) and 6H-SiC (in the range 1-30 eV) for the component perpendicular to the c axis are presented. The employed model is modified Adachi's model of the optical properties of semiconductors. In the employed model, damping constant Γ describing broadening phenomenon is replaced with the frequency dependent expression Γ(ω). In such a manner, type of broadening represents adjustable parameter of the model, allowing broadening to vary over a range of functions with similar kernels but different wings. Excellent agreement with experimental data is obtained for all investigated materials. Obtained relative rms errors for the real and imaginary parts of the index of refraction are equal to 3.5% and 5.2% for 6H-SiC in the 1-30 eV range, 1.7% and 4.1% for GaN in the 1.5-10 eV range, 1.2% and 2.5% for InN in the 2-10 eV range and 1.5% and 1.9% for AlN in the 6-20 eV range.en_US
dc.languageengen_US
dc.publisherS P I E - International Society for Optical Engineering. The Journal's web site is located at http://spie.org/x1848.xmlen_US
dc.relation.ispartofProceedings of SPIE - The International Society for Optical Engineeringen_US
dc.titleModeling the optical constants of wide bandgap materialsen_US
dc.typeArticleen_US
dc.identifier.emailDjurisic, Aleksandra B: dalek@hku.hken_US
dc.identifier.authorityDjurisic, Aleksandra B=rp00690en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0032683377en_US
dc.identifier.volume3625en_US
dc.identifier.spage49en_US
dc.identifier.epage56en_US
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridDjurisic, Aleksandra B=7004904830en_US
dc.identifier.scopusauthoridTsang, KwokOn=7201555013en_US
dc.identifier.scopusauthoridLi, EHerbert=7201410087en_US

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