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Article: Nature and elimination of yellow-band luminescence and donor-acceptor emission of undoped GaN

TitleNature and elimination of yellow-band luminescence and donor-acceptor emission of undoped GaN
Authors
Issue Date1999
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 1999, v. 74 n. 19, p. 2821-2823 How to Cite?
AbstractStrong linkage is revealed between the presence of extended defects and the yellow-band luminescence (YL) and the donor-acceptor emissions of GaN. By enlargement hexagonal crystallites or by lateral overgrowth of GaN, the density of the extended defects can be reduced, substantially weakening both YL and DA emissions. Taking advantage of this phenomenon, elimination of both emission types is demonstrated for direct epitaxial growth of GaN on sapphire. On the other hand, a much lower density of extended defects in laterally overgrown GaN suppresses the YL emission.
Persistent Identifierhttp://hdl.handle.net/10722/174769
ISSN
2015 Impact Factor: 3.142
2015 SCImago Journal Rankings: 1.105
References

 

DC FieldValueLanguage
dc.contributor.authorLi, Gen_US
dc.contributor.authorChua, SJen_US
dc.contributor.authorXu, SJen_US
dc.contributor.authorWang, Wen_US
dc.contributor.authorLi, Pen_US
dc.contributor.authorBeaumont, Ben_US
dc.contributor.authorGibart, Pen_US
dc.date.accessioned2012-11-26T08:47:21Z-
dc.date.available2012-11-26T08:47:21Z-
dc.date.issued1999en_US
dc.identifier.citationApplied Physics Letters, 1999, v. 74 n. 19, p. 2821-2823en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://hdl.handle.net/10722/174769-
dc.description.abstractStrong linkage is revealed between the presence of extended defects and the yellow-band luminescence (YL) and the donor-acceptor emissions of GaN. By enlargement hexagonal crystallites or by lateral overgrowth of GaN, the density of the extended defects can be reduced, substantially weakening both YL and DA emissions. Taking advantage of this phenomenon, elimination of both emission types is demonstrated for direct epitaxial growth of GaN on sapphire. On the other hand, a much lower density of extended defects in laterally overgrown GaN suppresses the YL emission.en_US
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_US
dc.relation.ispartofApplied Physics Lettersen_US
dc.titleNature and elimination of yellow-band luminescence and donor-acceptor emission of undoped GaNen_US
dc.typeArticleen_US
dc.identifier.emailXu, SJ: sjxu@hku.hken_US
dc.identifier.authorityXu, SJ=rp00821en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0032607794en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0032607794&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume74en_US
dc.identifier.issue19en_US
dc.identifier.spage2821en_US
dc.identifier.epage2823en_US
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridLi, G=35227531800en_US
dc.identifier.scopusauthoridChua, SJ=35516064500en_US
dc.identifier.scopusauthoridXu, SJ=7404439005en_US
dc.identifier.scopusauthoridWang, W=8542897400en_US
dc.identifier.scopusauthoridLi, P=26643192100en_US
dc.identifier.scopusauthoridBeaumont, B=7102277637en_US
dc.identifier.scopusauthoridGibart, P=7101839712en_US

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