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Article: Phonon-assisted photoluminescence in wurtzite GaN epilayer

TitlePhonon-assisted photoluminescence in wurtzite GaN epilayer
Authors
Issue Date1998
PublisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/sst
Citation
Semiconductor Science And Technology, 1998, v. 13 n. 7, p. 769-772 How to Cite?
AbstractTemperature-dependent photoluminescence of a wurtzite GaN epilayer was measured in the range of 4 to 300 K. At low temperature, the neutral-donor bound exciton emission dominates the spectra, while with increasing temperature, free exciton emissions grow rapidly and finally become the dominant lines. The contribution of the exciton-phonon interaction to the exciton linewidth was studied. Beside the exciton emissions, LO-phonon-assisted photoluminescence associated with both the bound exciton and the free exciton was observed. The temperature dependence of LO-phonon-assisted emissions can be well explained by the phonon-assisted free exciton emission theory established for II-VI compound semiconductors by Permogorov. In particular, the study of the 2LO phonon replica can provide information on the temperature dependence of the concentration and recombination lifetime of free excitons in GaN.
Persistent Identifierhttp://hdl.handle.net/10722/174761
ISSN
2015 Impact Factor: 2.098
2015 SCImago Journal Rankings: 0.676
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorLiu, Wen_US
dc.contributor.authorLi, MFen_US
dc.contributor.authorXu, SJen_US
dc.contributor.authorUchida, Ken_US
dc.contributor.authorMatsumoto, Ken_US
dc.date.accessioned2012-11-26T08:47:18Z-
dc.date.available2012-11-26T08:47:18Z-
dc.date.issued1998en_US
dc.identifier.citationSemiconductor Science And Technology, 1998, v. 13 n. 7, p. 769-772en_US
dc.identifier.issn0268-1242en_US
dc.identifier.urihttp://hdl.handle.net/10722/174761-
dc.description.abstractTemperature-dependent photoluminescence of a wurtzite GaN epilayer was measured in the range of 4 to 300 K. At low temperature, the neutral-donor bound exciton emission dominates the spectra, while with increasing temperature, free exciton emissions grow rapidly and finally become the dominant lines. The contribution of the exciton-phonon interaction to the exciton linewidth was studied. Beside the exciton emissions, LO-phonon-assisted photoluminescence associated with both the bound exciton and the free exciton was observed. The temperature dependence of LO-phonon-assisted emissions can be well explained by the phonon-assisted free exciton emission theory established for II-VI compound semiconductors by Permogorov. In particular, the study of the 2LO phonon replica can provide information on the temperature dependence of the concentration and recombination lifetime of free excitons in GaN.en_US
dc.languageengen_US
dc.publisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/ssten_US
dc.relation.ispartofSemiconductor Science and Technologyen_US
dc.titlePhonon-assisted photoluminescence in wurtzite GaN epilayeren_US
dc.typeArticleen_US
dc.identifier.emailXu, SJ: sjxu@hku.hken_US
dc.identifier.authorityXu, SJ=rp00821en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1088/0268-1242/13/7/018en_US
dc.identifier.scopuseid_2-s2.0-0032119205en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0032119205&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume13en_US
dc.identifier.issue7en_US
dc.identifier.spage769en_US
dc.identifier.epage772en_US
dc.identifier.isiWOS:000074823100016-
dc.publisher.placeUnited Kingdomen_US
dc.identifier.scopusauthoridLiu, W=36078712200en_US
dc.identifier.scopusauthoridLi, MF=7405260803en_US
dc.identifier.scopusauthoridXu, SJ=7404439005en_US
dc.identifier.scopusauthoridUchida, K=7404384781en_US
dc.identifier.scopusauthoridMatsumoto, K=7601605371en_US

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