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Article: Blueshift of effective band gap in n-i-p-i doping superlattices as a function of optical excitation intensity

TitleBlueshift of effective band gap in n-i-p-i doping superlattices as a function of optical excitation intensity
Authors
Issue Date1998
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal Of Applied Physics, 1998, v. 83 n. 3, p. 1476-1480 How to Cite?
AbstractIt is a well-established fact that the luminescence peak arising from spatially indirect transitions (effective band gap Eeff g) of a n-i-p-i structure shifts to a higher energy when the intensity of the excitation is increased. In this article, the quantitative dependence of the effective band gap on the excitation light intensity IW is formulated and verified experimentally. Using AlGaAs based n-i-p-i samples, the plot of ln(IW) versus Eeff g gives a slope of value 4 × 10-21 eV-1 which agrees well with the theoretical value of 5.2× 10-21 eV-1. It is found that this blueshift is typically 50 meV for a doubling in the magnitude of the optical excitation intensity from 50 to 100 mW cm-2. Further, it is found that the carrier lifetime decreases exponentially with an increase in the excitation intensity from zero to 500 mW cm-2 by four orders of magnitude which also agrees well with our theoretical model. © 1998 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/174758
ISSN
2015 Impact Factor: 2.101
2015 SCImago Journal Rankings: 0.603
References

 

DC FieldValueLanguage
dc.contributor.authorBastola, Sen_US
dc.contributor.authorChua, SJen_US
dc.contributor.authorXu, SJen_US
dc.date.accessioned2012-11-26T08:47:17Z-
dc.date.available2012-11-26T08:47:17Z-
dc.date.issued1998en_US
dc.identifier.citationJournal Of Applied Physics, 1998, v. 83 n. 3, p. 1476-1480en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://hdl.handle.net/10722/174758-
dc.description.abstractIt is a well-established fact that the luminescence peak arising from spatially indirect transitions (effective band gap Eeff g) of a n-i-p-i structure shifts to a higher energy when the intensity of the excitation is increased. In this article, the quantitative dependence of the effective band gap on the excitation light intensity IW is formulated and verified experimentally. Using AlGaAs based n-i-p-i samples, the plot of ln(IW) versus Eeff g gives a slope of value 4 × 10-21 eV-1 which agrees well with the theoretical value of 5.2× 10-21 eV-1. It is found that this blueshift is typically 50 meV for a doubling in the magnitude of the optical excitation intensity from 50 to 100 mW cm-2. Further, it is found that the carrier lifetime decreases exponentially with an increase in the excitation intensity from zero to 500 mW cm-2 by four orders of magnitude which also agrees well with our theoretical model. © 1998 American Institute of Physics.en_US
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_US
dc.relation.ispartofJournal of Applied Physicsen_US
dc.titleBlueshift of effective band gap in n-i-p-i doping superlattices as a function of optical excitation intensityen_US
dc.typeArticleen_US
dc.identifier.emailXu, SJ: sjxu@hku.hken_US
dc.identifier.authorityXu, SJ=rp00821en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0032003175en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0032003175&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume83en_US
dc.identifier.issue3en_US
dc.identifier.spage1476en_US
dc.identifier.epage1480en_US
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridBastola, S=6505911074en_US
dc.identifier.scopusauthoridChua, SJ=35516064500en_US
dc.identifier.scopusauthoridXu, SJ=7404439005en_US

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