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Article: Investigation of dislocations and traps in MBE grown p-InGaAs/GaAs heterostructures

TitleInvestigation of dislocations and traps in MBE grown p-InGaAs/GaAs heterostructures
Authors
KeywordsDislocations
Gaas Heterostructures
Lattice
Issue Date1997
PublisherElsevier S.A.. The Journal's web site is located at http://www.elsevier.com/locate/tsf
Citation
Thin Solid Films, 1997, v. 311 n. 1-2, p. 7-14 How to Cite?
AbstractDislocations and traps in MBE grown p-InGaAs/GaAs lattice-mismatched heterostructures are investigated by Cross-section Transmission Electron Microscopy (XTEM), Deep Level Transient Spectroscopy (DLTS) and Photo-luminescence (PL). The misfit dislocations and the threading dislocations observed by XTEM in different samples with different In mole fractions and different InGaAs layer thickness generally satisfy the Dodson-Tsao's plastic flow critical layer thickness curve. The XTEM, DLTS and PL results are consistent with each other. The threading dislocations in bulk layers introduce three hole trap levels H1, H2 and H5 with DLTS activation energies of 0.32 eV, 0.40 eV, 0.88 eV, respectively, and one electron trap E1 with DLTS activation energy of 0.54 eV. The misfit dislocations in relaxed InGaAs/GaAs interface induce a hole trap level H4 with DLTS activation energy between the range of 0.67-0.73 eV. All dislocation induced traps are non-radiative recombination centers which greatly degrade the optical property of the InGaAs/GaAs layers. © 1997 Elsevier Science S.A.
Persistent Identifierhttp://hdl.handle.net/10722/174747
ISSN
2015 Impact Factor: 1.761
2015 SCImago Journal Rankings: 0.726
References

 

DC FieldValueLanguage
dc.contributor.authorDu, AYen_US
dc.contributor.authorLi, MFen_US
dc.contributor.authorChong, TCen_US
dc.contributor.authorXu, SJen_US
dc.contributor.authorZhang, Zen_US
dc.contributor.authorYu, DPen_US
dc.date.accessioned2012-11-26T08:47:13Z-
dc.date.available2012-11-26T08:47:13Z-
dc.date.issued1997en_US
dc.identifier.citationThin Solid Films, 1997, v. 311 n. 1-2, p. 7-14en_US
dc.identifier.issn0040-6090en_US
dc.identifier.urihttp://hdl.handle.net/10722/174747-
dc.description.abstractDislocations and traps in MBE grown p-InGaAs/GaAs lattice-mismatched heterostructures are investigated by Cross-section Transmission Electron Microscopy (XTEM), Deep Level Transient Spectroscopy (DLTS) and Photo-luminescence (PL). The misfit dislocations and the threading dislocations observed by XTEM in different samples with different In mole fractions and different InGaAs layer thickness generally satisfy the Dodson-Tsao's plastic flow critical layer thickness curve. The XTEM, DLTS and PL results are consistent with each other. The threading dislocations in bulk layers introduce three hole trap levels H1, H2 and H5 with DLTS activation energies of 0.32 eV, 0.40 eV, 0.88 eV, respectively, and one electron trap E1 with DLTS activation energy of 0.54 eV. The misfit dislocations in relaxed InGaAs/GaAs interface induce a hole trap level H4 with DLTS activation energy between the range of 0.67-0.73 eV. All dislocation induced traps are non-radiative recombination centers which greatly degrade the optical property of the InGaAs/GaAs layers. © 1997 Elsevier Science S.A.en_US
dc.languageengen_US
dc.publisherElsevier S.A.. The Journal's web site is located at http://www.elsevier.com/locate/tsfen_US
dc.relation.ispartofThin Solid Filmsen_US
dc.subjectDislocationsen_US
dc.subjectGaas Heterostructuresen_US
dc.subjectLatticeen_US
dc.titleInvestigation of dislocations and traps in MBE grown p-InGaAs/GaAs heterostructuresen_US
dc.typeArticleen_US
dc.identifier.emailXu, SJ: sjxu@hku.hken_US
dc.identifier.authorityXu, SJ=rp00821en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0031355760en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0031355760&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume311en_US
dc.identifier.issue1-2en_US
dc.identifier.spage7en_US
dc.identifier.epage14en_US
dc.publisher.placeSwitzerlanden_US
dc.identifier.scopusauthoridDu, AY=7006264022en_US
dc.identifier.scopusauthoridLi, MF=7405260803en_US
dc.identifier.scopusauthoridChong, TC=13309383200en_US
dc.identifier.scopusauthoridXu, SJ=7404439005en_US
dc.identifier.scopusauthoridZhang, Z=54402136400en_US
dc.identifier.scopusauthoridYu, DP=7404667022en_US

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