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Article: In situ studies of epitaxial silicon growth by gas source molecular beam epitaxy

TitleIn situ studies of epitaxial silicon growth by gas source molecular beam epitaxy
Authors
KeywordsDynamics
Epitaxy
Kinetics
Silicon
Issue Date1997
Citation
Advanced Materials For Optics And Electronics, 1997, v. 7 n. 5, p. 215-224 How to Cite?
AbstractThe value of In situ monitoring to study growth dynamics and surface reaction kinetics in a gas source molecular beam epitaxy process is illustrated with reference to the growth of Si films on Si(001) substrates using a beam of disilane (Si2H6). By using a combination of reflection high-energy electron diffraction (RHEED) and reflection anisotropy spectroscopy (RAS), we show first how morphological (long-range order) and local electronic structure effects can be separated in the evaluation of growth dynamics. This involves the measurement of step density changes by RHEED concomitantly with the variation in domain coverage on the Si(001) (2×1) + (1×2) reconstructed surface by RAS. This approach is then extended to Investigate the kinetics of hydrogen desorption, which is the rate-limiting step in Si growth from Si2H6. It is shown that over a significant temperature range, zeroth-order kinetics are obeyed and this is explained on the basis of a step-mediated desorption process. Finally we show how this influences the growth rate on substrates of differing degrees of vicinality. © 1997 John Wiley & Sons, Ltd.
Persistent Identifierhttp://hdl.handle.net/10722/174745
ISSN
2002 Impact Factor: 2.688
References

 

DC FieldValueLanguage
dc.contributor.authorJoyce, BAen_US
dc.contributor.authorZhang, Jen_US
dc.contributor.authorTaylor, AGen_US
dc.contributor.authorXie, MHen_US
dc.contributor.authorFernández, JMen_US
dc.contributor.authorLees, AKen_US
dc.date.accessioned2012-11-26T08:47:12Z-
dc.date.available2012-11-26T08:47:12Z-
dc.date.issued1997en_US
dc.identifier.citationAdvanced Materials For Optics And Electronics, 1997, v. 7 n. 5, p. 215-224en_US
dc.identifier.issn1057-9257en_US
dc.identifier.urihttp://hdl.handle.net/10722/174745-
dc.description.abstractThe value of In situ monitoring to study growth dynamics and surface reaction kinetics in a gas source molecular beam epitaxy process is illustrated with reference to the growth of Si films on Si(001) substrates using a beam of disilane (Si2H6). By using a combination of reflection high-energy electron diffraction (RHEED) and reflection anisotropy spectroscopy (RAS), we show first how morphological (long-range order) and local electronic structure effects can be separated in the evaluation of growth dynamics. This involves the measurement of step density changes by RHEED concomitantly with the variation in domain coverage on the Si(001) (2×1) + (1×2) reconstructed surface by RAS. This approach is then extended to Investigate the kinetics of hydrogen desorption, which is the rate-limiting step in Si growth from Si2H6. It is shown that over a significant temperature range, zeroth-order kinetics are obeyed and this is explained on the basis of a step-mediated desorption process. Finally we show how this influences the growth rate on substrates of differing degrees of vicinality. © 1997 John Wiley & Sons, Ltd.en_US
dc.languageengen_US
dc.relation.ispartofAdvanced Materials for Optics and Electronicsen_US
dc.subjectDynamicsen_US
dc.subjectEpitaxyen_US
dc.subjectKineticsen_US
dc.subjectSiliconen_US
dc.titleIn situ studies of epitaxial silicon growth by gas source molecular beam epitaxyen_US
dc.typeArticleen_US
dc.identifier.emailXie, MH: mhxie@hku.hken_US
dc.identifier.authorityXie, MH=rp00818en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0031224234en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0031224234&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume7en_US
dc.identifier.issue5en_US
dc.identifier.spage215en_US
dc.identifier.epage224en_US
dc.identifier.scopusauthoridJoyce, BA=7102210065en_US
dc.identifier.scopusauthoridZhang, J=36062542300en_US
dc.identifier.scopusauthoridTaylor, AG=7405891545en_US
dc.identifier.scopusauthoridXie, MH=7202255416en_US
dc.identifier.scopusauthoridFernández, JM=7404575272en_US
dc.identifier.scopusauthoridLees, AK=7202900980en_US

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