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Article: Temperature quenching of tunable tunneling recombination emission in AlxGa1-xAs n-i-p-i doping structures

TitleTemperature quenching of tunable tunneling recombination emission in AlxGa1-xAs n-i-p-i doping structures
Authors
KeywordsA. Semiconductor
D. Optical Properties
E. Luminescence
Issue Date1997
PublisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/ssc
Citation
Solid State Communications, 1997, v. 102 n. 10, p. 739-742 How to Cite?
AbstractCompeting emissions arising from e-h recombinations within the same layer (spatial-direct) and across layers (spatial-indirect) in AlxGa1-xAs n-i-p-i doping structures have been studied using photoluminescence (PL). The emission from spatial-indirect transitions dominate at low temperatures (<50 K). The cross-over temperature, Tx, at which the spatial-direct transition overtakes in intensity arising from spatial indirect transition, is found to be dependent on intrinsic layer thickness and the doped layer concentrations but weakly dependent on the excitation laser power density for values beyond 0.5 W cm-2. The spatial-direct transition is not observed when the intrinsic layer is not present. The ratio of intensities between the spatial-direct to the spatial-indirect transitions is described by an exponential function which is in agreement with theoretical prediction. © 1997 Elsevier Science Ltd.
Persistent Identifierhttp://hdl.handle.net/10722/174742
ISSN
2015 Impact Factor: 1.458
2015 SCImago Journal Rankings: 0.776
References

 

DC FieldValueLanguage
dc.contributor.authorChua, SJen_US
dc.contributor.authorTang, XHen_US
dc.contributor.authorXu, SJen_US
dc.date.accessioned2012-11-26T08:47:11Z-
dc.date.available2012-11-26T08:47:11Z-
dc.date.issued1997en_US
dc.identifier.citationSolid State Communications, 1997, v. 102 n. 10, p. 739-742en_US
dc.identifier.issn0038-1098en_US
dc.identifier.urihttp://hdl.handle.net/10722/174742-
dc.description.abstractCompeting emissions arising from e-h recombinations within the same layer (spatial-direct) and across layers (spatial-indirect) in AlxGa1-xAs n-i-p-i doping structures have been studied using photoluminescence (PL). The emission from spatial-indirect transitions dominate at low temperatures (<50 K). The cross-over temperature, Tx, at which the spatial-direct transition overtakes in intensity arising from spatial indirect transition, is found to be dependent on intrinsic layer thickness and the doped layer concentrations but weakly dependent on the excitation laser power density for values beyond 0.5 W cm-2. The spatial-direct transition is not observed when the intrinsic layer is not present. The ratio of intensities between the spatial-direct to the spatial-indirect transitions is described by an exponential function which is in agreement with theoretical prediction. © 1997 Elsevier Science Ltd.en_US
dc.languageengen_US
dc.publisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/sscen_US
dc.relation.ispartofSolid State Communicationsen_US
dc.subjectA. Semiconductoren_US
dc.subjectD. Optical Propertiesen_US
dc.subjectE. Luminescenceen_US
dc.titleTemperature quenching of tunable tunneling recombination emission in AlxGa1-xAs n-i-p-i doping structuresen_US
dc.typeArticleen_US
dc.identifier.emailXu, SJ: sjxu@hku.hken_US
dc.identifier.authorityXu, SJ=rp00821en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0031164290en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0031164290&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume102en_US
dc.identifier.issue10en_US
dc.identifier.spage739en_US
dc.identifier.epage742en_US
dc.publisher.placeUnited Kingdomen_US
dc.identifier.scopusauthoridChua, SJ=35516064500en_US
dc.identifier.scopusauthoridTang, XH=37043381000en_US
dc.identifier.scopusauthoridXu, SJ=7404439005en_US

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