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Article: Temperature quenching of tunable tunneling recombination emission in AlxGa1-xAs n-i-p-i doping structures
Title | Temperature quenching of tunable tunneling recombination emission in AlxGa1-xAs n-i-p-i doping structures |
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Authors | |
Keywords | A. Semiconductor D. Optical Properties E. Luminescence |
Issue Date | 1997 |
Publisher | Pergamon. The Journal's web site is located at http://www.elsevier.com/locate/ssc |
Citation | Solid State Communications, 1997, v. 102 n. 10, p. 739-742 How to Cite? |
Abstract | Competing emissions arising from e-h recombinations within the same layer (spatial-direct) and across layers (spatial-indirect) in AlxGa1-xAs n-i-p-i doping structures have been studied using photoluminescence (PL). The emission from spatial-indirect transitions dominate at low temperatures (<50 K). The cross-over temperature, Tx, at which the spatial-direct transition overtakes in intensity arising from spatial indirect transition, is found to be dependent on intrinsic layer thickness and the doped layer concentrations but weakly dependent on the excitation laser power density for values beyond 0.5 W cm-2. The spatial-direct transition is not observed when the intrinsic layer is not present. The ratio of intensities between the spatial-direct to the spatial-indirect transitions is described by an exponential function which is in agreement with theoretical prediction. © 1997 Elsevier Science Ltd. |
Persistent Identifier | http://hdl.handle.net/10722/174742 |
ISSN | 2023 Impact Factor: 2.1 2023 SCImago Journal Rankings: 0.414 |
ISI Accession Number ID | |
References |
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Chua, SJ | en_US |
dc.contributor.author | Tang, XH | en_US |
dc.contributor.author | Xu, SJ | en_US |
dc.date.accessioned | 2012-11-26T08:47:11Z | - |
dc.date.available | 2012-11-26T08:47:11Z | - |
dc.date.issued | 1997 | en_US |
dc.identifier.citation | Solid State Communications, 1997, v. 102 n. 10, p. 739-742 | en_US |
dc.identifier.issn | 0038-1098 | en_US |
dc.identifier.uri | http://hdl.handle.net/10722/174742 | - |
dc.description.abstract | Competing emissions arising from e-h recombinations within the same layer (spatial-direct) and across layers (spatial-indirect) in AlxGa1-xAs n-i-p-i doping structures have been studied using photoluminescence (PL). The emission from spatial-indirect transitions dominate at low temperatures (<50 K). The cross-over temperature, Tx, at which the spatial-direct transition overtakes in intensity arising from spatial indirect transition, is found to be dependent on intrinsic layer thickness and the doped layer concentrations but weakly dependent on the excitation laser power density for values beyond 0.5 W cm-2. The spatial-direct transition is not observed when the intrinsic layer is not present. The ratio of intensities between the spatial-direct to the spatial-indirect transitions is described by an exponential function which is in agreement with theoretical prediction. © 1997 Elsevier Science Ltd. | en_US |
dc.language | eng | en_US |
dc.publisher | Pergamon. The Journal's web site is located at http://www.elsevier.com/locate/ssc | en_US |
dc.relation.ispartof | Solid State Communications | en_US |
dc.subject | A. Semiconductor | en_US |
dc.subject | D. Optical Properties | en_US |
dc.subject | E. Luminescence | en_US |
dc.title | Temperature quenching of tunable tunneling recombination emission in AlxGa1-xAs n-i-p-i doping structures | en_US |
dc.type | Article | en_US |
dc.identifier.email | Xu, SJ: sjxu@hku.hk | en_US |
dc.identifier.authority | Xu, SJ=rp00821 | en_US |
dc.description.nature | link_to_subscribed_fulltext | en_US |
dc.identifier.scopus | eid_2-s2.0-0031164290 | en_US |
dc.relation.references | http://www.scopus.com/mlt/select.url?eid=2-s2.0-0031164290&selection=ref&src=s&origin=recordpage | en_US |
dc.identifier.volume | 102 | en_US |
dc.identifier.issue | 10 | en_US |
dc.identifier.spage | 739 | en_US |
dc.identifier.epage | 742 | en_US |
dc.identifier.isi | WOS:A1997XA28500006 | - |
dc.publisher.place | United Kingdom | en_US |
dc.identifier.scopusauthorid | Chua, SJ=35516064500 | en_US |
dc.identifier.scopusauthorid | Tang, XH=37043381000 | en_US |
dc.identifier.scopusauthorid | Xu, SJ=7404439005 | en_US |
dc.identifier.issnl | 0038-1098 | - |