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Article: Arsenic surface segregation and incorporation in Si and Si1-xGex during gas source molecular beam epitaxy

TitleArsenic surface segregation and incorporation in Si and Si1-xGex during gas source molecular beam epitaxy
Authors
Issue Date1997
PublisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/jcrysgro
Citation
Journal Of Crystal Growth, 1997, v. 173 n. 3-4, p. 336-342 How to Cite?
AbstractThe surface segregation of As in Si and Si1-xGex during gas source molecular beam epitaxy (GSMBE) has been investigated. It is shown that the segregation process is suppressed in the alloy compared with pure Si. The segregation energy is shown to be dependent on growth temperature and has been attributed to a change of surface hydrogen coverage. Surface hydrogen blocks surface sites, thus acting as a surfactant to suppress As segregation. Arsenic incorporation from AsH3 involves dissociative chemisorption via empty surface sites. The balance between the rate of dissociation, surface segregation and desorption results in a temperature and Ge concentration dependence of the net effective flux of As and consequently its concentration in the film. It has an upper limit of less than 1018 cm-3 in Si, but much higher concentrations can be achieved in SiGe alloys.
Persistent Identifierhttp://hdl.handle.net/10722/174739
ISSN
2015 Impact Factor: 1.462
2015 SCImago Journal Rankings: 0.752
References

 

DC FieldValueLanguage
dc.contributor.authorXie, MHen_US
dc.contributor.authorLees, AKen_US
dc.contributor.authorFernandez, JMen_US
dc.contributor.authorZhang, Jen_US
dc.contributor.authorJoyce, BAen_US
dc.date.accessioned2012-11-26T08:47:10Z-
dc.date.available2012-11-26T08:47:10Z-
dc.date.issued1997en_US
dc.identifier.citationJournal Of Crystal Growth, 1997, v. 173 n. 3-4, p. 336-342en_US
dc.identifier.issn0022-0248en_US
dc.identifier.urihttp://hdl.handle.net/10722/174739-
dc.description.abstractThe surface segregation of As in Si and Si1-xGex during gas source molecular beam epitaxy (GSMBE) has been investigated. It is shown that the segregation process is suppressed in the alloy compared with pure Si. The segregation energy is shown to be dependent on growth temperature and has been attributed to a change of surface hydrogen coverage. Surface hydrogen blocks surface sites, thus acting as a surfactant to suppress As segregation. Arsenic incorporation from AsH3 involves dissociative chemisorption via empty surface sites. The balance between the rate of dissociation, surface segregation and desorption results in a temperature and Ge concentration dependence of the net effective flux of As and consequently its concentration in the film. It has an upper limit of less than 1018 cm-3 in Si, but much higher concentrations can be achieved in SiGe alloys.en_US
dc.languageengen_US
dc.publisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/jcrysgroen_US
dc.relation.ispartofJournal of Crystal Growthen_US
dc.titleArsenic surface segregation and incorporation in Si and Si1-xGex during gas source molecular beam epitaxyen_US
dc.typeArticleen_US
dc.identifier.emailXie, MH: mhxie@hku.hken_US
dc.identifier.authorityXie, MH=rp00818en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0031119152en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0031119152&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume173en_US
dc.identifier.issue3-4en_US
dc.identifier.spage336en_US
dc.identifier.epage342en_US
dc.publisher.placeNetherlandsen_US
dc.identifier.scopusauthoridXie, MH=7202255416en_US
dc.identifier.scopusauthoridLees, AK=7202900980en_US
dc.identifier.scopusauthoridFernandez, JM=7404575272en_US
dc.identifier.scopusauthoridZhang, J=7601345343en_US
dc.identifier.scopusauthoridJoyce, BA=7102210065en_US

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