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Article: Surface segregation during molecular beam epitaxy: The site-blocking effects of surfactant atoms

TitleSurface segregation during molecular beam epitaxy: The site-blocking effects of surfactant atoms
Authors
KeywordsGas Source Molecular Beam Epitaxy (Gsmbe)
Si/Sige
Surface Segregation
Issue Date1996
PublisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/susc
Citation
Surface Science, 1996, v. 367 n. 2, p. 231-237 How to Cite?
AbstractThe two-site exchange model for surface segregation is extended to take account of the site-blocking action of foreign atoms on the surface, either those applied deliberately as a surfactant, or those occurring as reaction products of the growth process. The model is applied to segregation of Ge during the growth of a Si film on a SiGe surface by gas-source molecular beam epitaxy, using Si2H6 as the Si precursor. It is shown how the reaction product, hydrogen, which is adsorbed on the growing surface, acts to reduce the Gibbs energy of segregation. The trends for the blocked-site concentration by hydrogen as a function of temperature and Si2H6 flux derived from the Ge segregation data show excellent agreement with reported results of surface hydrogen coverage obtained by completely different techniques.
Persistent Identifierhttp://hdl.handle.net/10722/174731
ISSN
2015 Impact Factor: 1.931
2015 SCImago Journal Rankings: 0.792
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorXie, MHen_US
dc.contributor.authorZhang, Jen_US
dc.contributor.authorLees, Aen_US
dc.contributor.authorFernandez, JMen_US
dc.contributor.authorJoyce, BAen_US
dc.date.accessioned2012-11-26T08:47:08Z-
dc.date.available2012-11-26T08:47:08Z-
dc.date.issued1996en_US
dc.identifier.citationSurface Science, 1996, v. 367 n. 2, p. 231-237en_US
dc.identifier.issn0039-6028en_US
dc.identifier.urihttp://hdl.handle.net/10722/174731-
dc.description.abstractThe two-site exchange model for surface segregation is extended to take account of the site-blocking action of foreign atoms on the surface, either those applied deliberately as a surfactant, or those occurring as reaction products of the growth process. The model is applied to segregation of Ge during the growth of a Si film on a SiGe surface by gas-source molecular beam epitaxy, using Si2H6 as the Si precursor. It is shown how the reaction product, hydrogen, which is adsorbed on the growing surface, acts to reduce the Gibbs energy of segregation. The trends for the blocked-site concentration by hydrogen as a function of temperature and Si2H6 flux derived from the Ge segregation data show excellent agreement with reported results of surface hydrogen coverage obtained by completely different techniques.en_US
dc.languageengen_US
dc.publisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/suscen_US
dc.relation.ispartofSurface Scienceen_US
dc.subjectGas Source Molecular Beam Epitaxy (Gsmbe)en_US
dc.subjectSi/Sigeen_US
dc.subjectSurface Segregationen_US
dc.titleSurface segregation during molecular beam epitaxy: The site-blocking effects of surfactant atomsen_US
dc.typeArticleen_US
dc.identifier.emailXie, MH: mhxie@hku.hken_US
dc.identifier.authorityXie, MH=rp00818en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1016/S0039-6028(96)00872-2en_US
dc.identifier.scopuseid_2-s2.0-0030289278en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0030289278&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume367en_US
dc.identifier.issue2en_US
dc.identifier.spage231en_US
dc.identifier.epage237en_US
dc.identifier.isiWOS:A1996VT42200016-
dc.publisher.placeNetherlandsen_US
dc.identifier.scopusauthoridXie, MH=7202255416en_US
dc.identifier.scopusauthoridZhang, J=36062542300en_US
dc.identifier.scopusauthoridLees, A=7202900980en_US
dc.identifier.scopusauthoridFernandez, JM=7404575272en_US
dc.identifier.scopusauthoridJoyce, BA=7102210065en_US

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