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Article: Growth and doping of Si and SiGe films by hydride gas-source molecular beam epitaxy

TitleGrowth and doping of Si and SiGe films by hydride gas-source molecular beam epitaxy
Authors
Issue Date1996
PublisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/jcrysgro
Citation
Journal Of Crystal Growth, 1996, v. 164 n. 1-4, p. 214-222 How to Cite?
AbstractThe use of molecular beams of the hydrides of Si, Ge, As and B provides an ideal vehicle for the in-situ study of the kinetics and dynamics of growth and dopant incorporation of Si and SiGe alloy films. In this article results obtained using reflection high energy electron diffraction (RHEED) and reflectance anisotropy (RA), otherwise known as reflectance difference spectroscopy (RDS), are summarised. The topics considered include basic reaction kinetics, surface segregation of Ge and As and its effect on rate processes, the influence of surface reconstruction domains on RA response and the application of gas-source molecular beam epitaxy (GSMBE) to the formation of two-dimensional electron gases in modulation-doped SiGe/Si/SiGe heterostructures.
Persistent Identifierhttp://hdl.handle.net/10722/174728
ISSN
2015 Impact Factor: 1.462
2015 SCImago Journal Rankings: 0.752
References

 

DC FieldValueLanguage
dc.contributor.authorJoyce, BAen_US
dc.contributor.authorFernández, JMen_US
dc.contributor.authorXie, MHen_US
dc.contributor.authorMatsumura, Aen_US
dc.contributor.authorZhang, Jen_US
dc.contributor.authorTaylor, AGen_US
dc.date.accessioned2012-11-26T08:47:06Z-
dc.date.available2012-11-26T08:47:06Z-
dc.date.issued1996en_US
dc.identifier.citationJournal Of Crystal Growth, 1996, v. 164 n. 1-4, p. 214-222en_US
dc.identifier.issn0022-0248en_US
dc.identifier.urihttp://hdl.handle.net/10722/174728-
dc.description.abstractThe use of molecular beams of the hydrides of Si, Ge, As and B provides an ideal vehicle for the in-situ study of the kinetics and dynamics of growth and dopant incorporation of Si and SiGe alloy films. In this article results obtained using reflection high energy electron diffraction (RHEED) and reflectance anisotropy (RA), otherwise known as reflectance difference spectroscopy (RDS), are summarised. The topics considered include basic reaction kinetics, surface segregation of Ge and As and its effect on rate processes, the influence of surface reconstruction domains on RA response and the application of gas-source molecular beam epitaxy (GSMBE) to the formation of two-dimensional electron gases in modulation-doped SiGe/Si/SiGe heterostructures.en_US
dc.languageengen_US
dc.publisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/jcrysgroen_US
dc.relation.ispartofJournal of Crystal Growthen_US
dc.titleGrowth and doping of Si and SiGe films by hydride gas-source molecular beam epitaxyen_US
dc.typeArticleen_US
dc.identifier.emailXie, MH: mhxie@hku.hken_US
dc.identifier.authorityXie, MH=rp00818en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0030195012en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0030195012&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume164en_US
dc.identifier.issue1-4en_US
dc.identifier.spage214en_US
dc.identifier.epage222en_US
dc.publisher.placeNetherlandsen_US
dc.identifier.scopusauthoridJoyce, BA=7102210065en_US
dc.identifier.scopusauthoridFernández, JM=7404575272en_US
dc.identifier.scopusauthoridXie, MH=7202255416en_US
dc.identifier.scopusauthoridMatsumura, A=7103092678en_US
dc.identifier.scopusauthoridZhang, J=36062542300en_US
dc.identifier.scopusauthoridTaylor, AG=7405891545en_US

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