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- Publisher Website: 10.1002/pssa.2211520225
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- WOS: WOS:A1995TP66700024
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Article: Temperature dependence of the ideality factor of GaAs and Si Schottky diodes
Title | Temperature dependence of the ideality factor of GaAs and Si Schottky diodes |
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Authors | |
Issue Date | 1995 |
Publisher | Wiley - V C H Verlag GmbH & Co KGaA. The Journal's web site is located at http://www.physica-status-solidi.com |
Citation | Physica Status Solidi (A) Applied Research, 1995, v. 152 n. 2, p. 563-571 How to Cite? |
Abstract | Current-voltage-temperature (I-V-T) measurements of different metal-semiconductor diodes are carried out and the temperature dependence of the ideality factor and the Schottky barrier height of these diodes are studied using different approaches. Based on certain assumptions and previously proposed models, different diode parameters are extracted and their correlations show that the interface imperfection of a metal-semiconductor contact can contribute to these temperature dependences. Moreover, in this work, the Au/n-Si and Al/n-GaAs diodes are shown to have the most imperfect contact interface amongst the sample diodes. |
Persistent Identifier | http://hdl.handle.net/10722/174721 |
ISSN | |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Lee, TC | en_HK |
dc.contributor.author | Chen, TP | en_HK |
dc.contributor.author | Au, HL | en_HK |
dc.contributor.author | Fung, S | en_HK |
dc.contributor.author | Beling, CD | en_HK |
dc.date.accessioned | 2012-11-26T08:47:04Z | - |
dc.date.available | 2012-11-26T08:47:04Z | - |
dc.date.issued | 1995 | en_HK |
dc.identifier.citation | Physica Status Solidi (A) Applied Research, 1995, v. 152 n. 2, p. 563-571 | en_HK |
dc.identifier.issn | 0031-8965 | en_HK |
dc.identifier.uri | http://hdl.handle.net/10722/174721 | - |
dc.description.abstract | Current-voltage-temperature (I-V-T) measurements of different metal-semiconductor diodes are carried out and the temperature dependence of the ideality factor and the Schottky barrier height of these diodes are studied using different approaches. Based on certain assumptions and previously proposed models, different diode parameters are extracted and their correlations show that the interface imperfection of a metal-semiconductor contact can contribute to these temperature dependences. Moreover, in this work, the Au/n-Si and Al/n-GaAs diodes are shown to have the most imperfect contact interface amongst the sample diodes. | en_HK |
dc.language | eng | en_US |
dc.publisher | Wiley - V C H Verlag GmbH & Co KGaA. The Journal's web site is located at http://www.physica-status-solidi.com | - |
dc.relation.ispartof | Physica Status Solidi (A) Applied Research | en_HK |
dc.title | Temperature dependence of the ideality factor of GaAs and Si Schottky diodes | en_HK |
dc.type | Article | en_HK |
dc.identifier.email | Fung, S: sfung@hku.hk | en_HK |
dc.identifier.email | Beling, CD: cdbeling@hkucc.hku.hk | en_HK |
dc.identifier.authority | Fung, S=rp00695 | en_HK |
dc.identifier.authority | Beling, CD=rp00660 | en_HK |
dc.description.nature | link_to_subscribed_fulltext | en_US |
dc.identifier.doi | 10.1002/pssa.2211520225 | - |
dc.identifier.scopus | eid_2-s2.0-0029540948 | en_HK |
dc.identifier.hkuros | 9419 | - |
dc.identifier.volume | 152 | en_HK |
dc.identifier.issue | 2 | en_HK |
dc.identifier.spage | 563 | en_HK |
dc.identifier.epage | 571 | en_HK |
dc.identifier.isi | WOS:A1995TP66700024 | - |
dc.identifier.scopusauthorid | Lee, TC=36347141200 | en_HK |
dc.identifier.scopusauthorid | Chen, TP=36442234400 | en_HK |
dc.identifier.scopusauthorid | Au, HL=7004152230 | en_HK |
dc.identifier.scopusauthorid | Fung, S=7201970040 | en_HK |
dc.identifier.scopusauthorid | Beling, CD=7005864180 | en_HK |
dc.identifier.issnl | 0031-8965 | - |