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Article: Electroluminescense and photoluminescense of nano-crystalline Si:H films

TitleElectroluminescense and photoluminescense of nano-crystalline Si:H films
Authors
Issue Date1995
Citation
Pan Tao Ti Hsueh Pao/Chinese Journal Of Semiconductors, 1995, v. 16 n. 12, p. 913-916 How to Cite?
AbstractThe luminescense properties of nc-Si:H films grown by PECVD method through controlling deposition conditions have been studied. DC voltage was longtitudinally applied on the films, and the electronluminescense of the materials can be clearly found in dark surroundings. The spectra of EL and PL of nc-Si:H films were measured in the same instrument. Using Lambda 9 UV/VIS/NIR spectrophotomer, we have measured the transmission spectra of nc-Si:H films, and obtained the Tauc curves and the optical gap Eg.
Persistent Identifierhttp://hdl.handle.net/10722/174720
ISSN
2011 SCImago Journal Rankings: 0.140

 

DC FieldValueLanguage
dc.contributor.authorYu, Mingbinen_US
dc.contributor.authorLi, Zuemeien_US
dc.contributor.authorHe, Yuliangen_US
dc.contributor.authorXu, Shijieen_US
dc.contributor.authorLiu, Jianen_US
dc.contributor.authorLuo, Jinshengen_US
dc.contributor.authorWei, Xiwenen_US
dc.contributor.authorZheng, Houzhien_US
dc.contributor.authorRong, Ailunen_US
dc.date.accessioned2012-11-26T08:47:04Z-
dc.date.available2012-11-26T08:47:04Z-
dc.date.issued1995en_US
dc.identifier.citationPan Tao Ti Hsueh Pao/Chinese Journal Of Semiconductors, 1995, v. 16 n. 12, p. 913-916en_US
dc.identifier.issn0253-4177en_US
dc.identifier.urihttp://hdl.handle.net/10722/174720-
dc.description.abstractThe luminescense properties of nc-Si:H films grown by PECVD method through controlling deposition conditions have been studied. DC voltage was longtitudinally applied on the films, and the electronluminescense of the materials can be clearly found in dark surroundings. The spectra of EL and PL of nc-Si:H films were measured in the same instrument. Using Lambda 9 UV/VIS/NIR spectrophotomer, we have measured the transmission spectra of nc-Si:H films, and obtained the Tauc curves and the optical gap Eg.en_US
dc.languageengen_US
dc.relation.ispartofPan Tao Ti Hsueh Pao/Chinese Journal of Semiconductorsen_US
dc.titleElectroluminescense and photoluminescense of nano-crystalline Si:H filmsen_US
dc.typeArticleen_US
dc.identifier.emailXu, Shijie: sjxu@hku.hken_US
dc.identifier.authorityXu, Shijie=rp00821en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0029492629en_US
dc.identifier.volume16en_US
dc.identifier.issue12en_US
dc.identifier.spage913en_US
dc.identifier.epage916en_US
dc.publisher.placeChinaen_US
dc.identifier.scopusauthoridYu, Mingbin=8088400600en_US
dc.identifier.scopusauthoridLi, Zuemei=7409073665en_US
dc.identifier.scopusauthoridHe, Yuliang=7404941304en_US
dc.identifier.scopusauthoridXu, Shijie=7404439005en_US
dc.identifier.scopusauthoridLiu, Jian=36079559600en_US
dc.identifier.scopusauthoridLuo, Jinsheng=7404182734en_US
dc.identifier.scopusauthoridWei, Xiwen=7402117469en_US
dc.identifier.scopusauthoridZheng, Houzhi=7403440708en_US
dc.identifier.scopusauthoridRong, Ailun=7003583968en_US

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