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Article: Two dimensional electron gases in SiGe/Si heterostructures grown by gas source molecular beam epitaxy

TitleTwo dimensional electron gases in SiGe/Si heterostructures grown by gas source molecular beam epitaxy
Authors
Issue Date1995
PublisherSpringer New York LLC. The Journal's web site is located at http://springerlink.metapress.com/openurl.asp?genre=journal&issn=0957-4522
Citation
Journal Of Materials Science: Materials In Electronics, 1995, v. 6 n. 5, p. 330-335 How to Cite?
AbstractWe have realized two dimensional electron gases (2DEGs) in tensile strained silicon (Si) channels between strain relaxed silicon germanium (Si0.70Ge0.30) barriers grown on Si(100) substrates by Gas Source Molecular Beam Epitaxy (GSMBE). Disilane (Si2H6), germane (GeH4), and arsine (AsH3) are used as the source gases. Compositionally graded buffer layers with a linear gradient of 30%; Ge/1 Μm relax the strain of the Si0.70Ge0.30 barrier layers by an amount greater than 95%; as determined from X-ray diffraction (XRD) rocking curves. Dislocation densities in the vicinity of the active strained Si channels are below 107 cm-2 as determined from transmission electron microscopy (TEM) measurements. These structures have low n-type background impurity concentrations ( < 1016 cm-3) and the Si0.70Ge0.30 barriers can be successfully doped with a unity activation ratio in the 1017 to 1020 cm-3 range. At present, we obtain 300 K (0.4 K) electron mobilities and sheet densities in our 2DEGs of 103 (5.3 × 104) cm2/Vs and 3 × 1012 (5.2 × 1011) cm-2, respectively. A discussion of the requirements for growing these structures by GSMBE and the modifications needed to improve the transport properties of the 2DEGs is presented. © 1995 Chapman & Hall.
Persistent Identifierhttp://hdl.handle.net/10722/174719
ISSN
2015 Impact Factor: 1.798
2015 SCImago Journal Rankings: 0.553
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorFernández, JMen_US
dc.contributor.authorMatsumura, Aen_US
dc.contributor.authorZhang, XMen_US
dc.contributor.authorXie, MHen_US
dc.contributor.authorHart, Len_US
dc.contributor.authorZhang, Jen_US
dc.contributor.authorJoyce, BAen_US
dc.contributor.authorThornton, TJen_US
dc.date.accessioned2012-11-26T08:47:03Z-
dc.date.available2012-11-26T08:47:03Z-
dc.date.issued1995en_US
dc.identifier.citationJournal Of Materials Science: Materials In Electronics, 1995, v. 6 n. 5, p. 330-335en_US
dc.identifier.issn0957-4522en_US
dc.identifier.urihttp://hdl.handle.net/10722/174719-
dc.description.abstractWe have realized two dimensional electron gases (2DEGs) in tensile strained silicon (Si) channels between strain relaxed silicon germanium (Si0.70Ge0.30) barriers grown on Si(100) substrates by Gas Source Molecular Beam Epitaxy (GSMBE). Disilane (Si2H6), germane (GeH4), and arsine (AsH3) are used as the source gases. Compositionally graded buffer layers with a linear gradient of 30%; Ge/1 Μm relax the strain of the Si0.70Ge0.30 barrier layers by an amount greater than 95%; as determined from X-ray diffraction (XRD) rocking curves. Dislocation densities in the vicinity of the active strained Si channels are below 107 cm-2 as determined from transmission electron microscopy (TEM) measurements. These structures have low n-type background impurity concentrations ( < 1016 cm-3) and the Si0.70Ge0.30 barriers can be successfully doped with a unity activation ratio in the 1017 to 1020 cm-3 range. At present, we obtain 300 K (0.4 K) electron mobilities and sheet densities in our 2DEGs of 103 (5.3 × 104) cm2/Vs and 3 × 1012 (5.2 × 1011) cm-2, respectively. A discussion of the requirements for growing these structures by GSMBE and the modifications needed to improve the transport properties of the 2DEGs is presented. © 1995 Chapman & Hall.en_US
dc.languageengen_US
dc.publisherSpringer New York LLC. The Journal's web site is located at http://springerlink.metapress.com/openurl.asp?genre=journal&issn=0957-4522en_US
dc.relation.ispartofJournal of Materials Science: Materials in Electronicsen_US
dc.titleTwo dimensional electron gases in SiGe/Si heterostructures grown by gas source molecular beam epitaxyen_US
dc.typeArticleen_US
dc.identifier.emailXie, MH: mhxie@hku.hken_US
dc.identifier.authorityXie, MH=rp00818en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1007/BF00125888en_US
dc.identifier.scopuseid_2-s2.0-0029388824en_US
dc.identifier.volume6en_US
dc.identifier.issue5en_US
dc.identifier.spage330en_US
dc.identifier.epage335en_US
dc.identifier.isiWOS:A1995TD89700010-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridFernández, JM=7404575272en_US
dc.identifier.scopusauthoridMatsumura, A=7103092678en_US
dc.identifier.scopusauthoridZhang, XM=8521572500en_US
dc.identifier.scopusauthoridXie, MH=7202255416en_US
dc.identifier.scopusauthoridHart, L=7201500367en_US
dc.identifier.scopusauthoridZhang, J=36062542300en_US
dc.identifier.scopusauthoridJoyce, BA=7102210065en_US
dc.identifier.scopusauthoridThornton, TJ=7004444402en_US

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