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Article: On the metallic nature of heavily doped polyacetylene

TitleOn the metallic nature of heavily doped polyacetylene
Authors
Issue Date1995
PublisherElsevier SA. The Journal's web site is located at http://www.elsevier.com/locate/synmet
Citation
Synthetic Metals, 1995, v. 69 n. 1-3, p. 663-665 How to Cite?
AbstractWe propose a model for the metal-insulator transition in heavily doped polyacetylene. The phase transition is a second order transition to a novel metallic state driven by a new type of charge carrier we call Tri-soliton. Our model accounts for detailed experimental findings in infrared absorption, magnetic susceptibility, and transport. Within our model there is no transport energy gap. © 1995.
Persistent Identifierhttp://hdl.handle.net/10722/174713
ISSN
2015 Impact Factor: 2.299
2015 SCImago Journal Rankings: 0.663

 

DC FieldValueLanguage
dc.contributor.authorKim, YHen_US
dc.contributor.authorZhang, FCen_US
dc.date.accessioned2012-11-26T08:47:00Z-
dc.date.available2012-11-26T08:47:00Z-
dc.date.issued1995en_US
dc.identifier.citationSynthetic Metals, 1995, v. 69 n. 1-3, p. 663-665en_US
dc.identifier.issn0379-6779en_US
dc.identifier.urihttp://hdl.handle.net/10722/174713-
dc.description.abstractWe propose a model for the metal-insulator transition in heavily doped polyacetylene. The phase transition is a second order transition to a novel metallic state driven by a new type of charge carrier we call Tri-soliton. Our model accounts for detailed experimental findings in infrared absorption, magnetic susceptibility, and transport. Within our model there is no transport energy gap. © 1995.en_US
dc.languageengen_US
dc.publisherElsevier SA. The Journal's web site is located at http://www.elsevier.com/locate/synmeten_US
dc.relation.ispartofSynthetic Metalsen_US
dc.titleOn the metallic nature of heavily doped polyacetyleneen_US
dc.typeArticleen_US
dc.identifier.emailZhang, FC: fuchun@hkucc.hku.hken_US
dc.identifier.authorityZhang, FC=rp00840en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0029274480en_US
dc.identifier.volume69en_US
dc.identifier.issue1-3en_US
dc.identifier.spage663en_US
dc.identifier.epage665en_US
dc.publisher.placeSwitzerlanden_US
dc.identifier.scopusauthoridKim, YH=8388007600en_US
dc.identifier.scopusauthoridZhang, FC=14012468800en_US

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