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Article: Growth dynamics studied by RHEED during Si Ge epitaxy from gaseous hydrides

TitleGrowth dynamics studied by RHEED during Si Ge epitaxy from gaseous hydrides
Authors
Issue Date1994
PublisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/susc
Citation
Surface Science, 1994, v. 320 n. 3, p. 259-270 How to Cite?
AbstractSi and Ge epitaxial growth from disilane and germane in a gas-source molecular beam epitaxy (GSMBE) system is followed in situ by reflection high-energy electron diffraction (RHEED) intensity oscillations. During Ge homoepitaxy, the growth rate on a Ge(100) substrate is found to be limited by surface hydrogen desorption below 350°C and by hydride adsorption above this temperature. Ge heteroepitaxy on Si results in incomplete layer growth leaving exposed Si at the surface during the initial stages of growth. Therefore, a gradual change in the observed Si surface concentration is seen as growth proceeds. Si heteroepitaxy on Ge follows the Volmer-Weber growth mode and proceeds via island formation. This, combined with Ge surface segregation, results in a slow decrease of the Ge surface population at the growth front. During heteroepitaxial growth, hydride reaction rates differ on Si and Ge surfaces, and therefore a changing concentration of the surface species is manifest as a gradual change in the observed oscillation frequency. This effect, observed during the early stages of growth, shows strong temperature dependence, consistent with previous observations on SiGe alloys. Following several layers of growth, however, the surfaces become rough. The influence of this roughness on the oscillation frequency is also discussed. © 1994.
Persistent Identifierhttp://hdl.handle.net/10722/174712
ISSN
2015 Impact Factor: 1.931
2015 SCImago Journal Rankings: 0.792

 

DC FieldValueLanguage
dc.contributor.authorXie, MHen_US
dc.contributor.authorZhang, Jen_US
dc.contributor.authorMokler, SMen_US
dc.contributor.authorFernández, Jen_US
dc.contributor.authorJoyce, BAen_US
dc.date.accessioned2012-11-26T08:47:00Z-
dc.date.available2012-11-26T08:47:00Z-
dc.date.issued1994en_US
dc.identifier.citationSurface Science, 1994, v. 320 n. 3, p. 259-270en_US
dc.identifier.issn0039-6028en_US
dc.identifier.urihttp://hdl.handle.net/10722/174712-
dc.description.abstractSi and Ge epitaxial growth from disilane and germane in a gas-source molecular beam epitaxy (GSMBE) system is followed in situ by reflection high-energy electron diffraction (RHEED) intensity oscillations. During Ge homoepitaxy, the growth rate on a Ge(100) substrate is found to be limited by surface hydrogen desorption below 350°C and by hydride adsorption above this temperature. Ge heteroepitaxy on Si results in incomplete layer growth leaving exposed Si at the surface during the initial stages of growth. Therefore, a gradual change in the observed Si surface concentration is seen as growth proceeds. Si heteroepitaxy on Ge follows the Volmer-Weber growth mode and proceeds via island formation. This, combined with Ge surface segregation, results in a slow decrease of the Ge surface population at the growth front. During heteroepitaxial growth, hydride reaction rates differ on Si and Ge surfaces, and therefore a changing concentration of the surface species is manifest as a gradual change in the observed oscillation frequency. This effect, observed during the early stages of growth, shows strong temperature dependence, consistent with previous observations on SiGe alloys. Following several layers of growth, however, the surfaces become rough. The influence of this roughness on the oscillation frequency is also discussed. © 1994.en_US
dc.languageengen_US
dc.publisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/suscen_US
dc.relation.ispartofSurface Scienceen_US
dc.titleGrowth dynamics studied by RHEED during Si Ge epitaxy from gaseous hydridesen_US
dc.typeArticleen_US
dc.identifier.emailXie, MH: mhxie@hku.hken_US
dc.identifier.authorityXie, MH=rp00818en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0028742979en_US
dc.identifier.volume320en_US
dc.identifier.issue3en_US
dc.identifier.spage259en_US
dc.identifier.epage270en_US
dc.publisher.placeNetherlandsen_US
dc.identifier.scopusauthoridXie, MH=7202255416en_US
dc.identifier.scopusauthoridZhang, J=36062542300en_US
dc.identifier.scopusauthoridMokler, SM=6603054444en_US
dc.identifier.scopusauthoridFernández, J=7404575272en_US
dc.identifier.scopusauthoridJoyce, BA=7102210065en_US

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