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Article: Determination of leakage resistance of Schottky contacts by photovoltage measurements
Title | Determination of leakage resistance of Schottky contacts by photovoltage measurements |
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Authors | |
Issue Date | 1994 |
Publisher | American Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp |
Citation | Journal of Applied Physics, 1994, v. 75 n. 11, p. 7361-7364 How to Cite? |
Abstract | The leakage resistance of Schottky contacts has been determined from photovoltage measurements, thus allowing the contribution of the leakage current to the current transport in the Schottky contacts to be easily evaluated. It is found that under identical conditions of sample fabrication, different Schottky contacts have nearly the same leakage resistance. A comparison between a theoretical calculation and experimental data for the photocurrent-photovoltage relationship shows that the leakage current becomes dominant at low temperatures and small photocurrents. In these regimes, the current transport is dominated by the leakage current, and as a result, a linear relation (the Ohmic rule) between the photocurrent and the photovoltage is observed. |
Persistent Identifier | http://hdl.handle.net/10722/174710 |
ISSN | 2023 Impact Factor: 2.7 2023 SCImago Journal Rankings: 0.649 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Chen, TP | en_HK |
dc.contributor.author | Lee, TC | en_HK |
dc.contributor.author | Fung, S | en_HK |
dc.contributor.author | Beling, CD | en_HK |
dc.date.accessioned | 2012-11-26T08:46:59Z | - |
dc.date.available | 2012-11-26T08:46:59Z | - |
dc.date.issued | 1994 | en_HK |
dc.identifier.citation | Journal of Applied Physics, 1994, v. 75 n. 11, p. 7361-7364 | - |
dc.identifier.issn | 0021-8979 | en_HK |
dc.identifier.uri | http://hdl.handle.net/10722/174710 | - |
dc.description.abstract | The leakage resistance of Schottky contacts has been determined from photovoltage measurements, thus allowing the contribution of the leakage current to the current transport in the Schottky contacts to be easily evaluated. It is found that under identical conditions of sample fabrication, different Schottky contacts have nearly the same leakage resistance. A comparison between a theoretical calculation and experimental data for the photocurrent-photovoltage relationship shows that the leakage current becomes dominant at low temperatures and small photocurrents. In these regimes, the current transport is dominated by the leakage current, and as a result, a linear relation (the Ohmic rule) between the photocurrent and the photovoltage is observed. | en_HK |
dc.language | eng | en_US |
dc.publisher | American Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp | en_HK |
dc.relation.ispartof | Journal of Applied Physics | en_HK |
dc.title | Determination of leakage resistance of Schottky contacts by photovoltage measurements | en_HK |
dc.type | Article | en_HK |
dc.identifier.email | Fung, S: sfung@hku.hk | en_HK |
dc.identifier.email | Beling, CD: cdbeling@hkucc.hku.hk | en_HK |
dc.identifier.authority | Fung, S=rp00695 | en_HK |
dc.identifier.authority | Beling, CD=rp00660 | en_HK |
dc.description.nature | link_to_subscribed_fulltext | en_US |
dc.identifier.doi | 10.1063/1.356649 | en_HK |
dc.identifier.scopus | eid_2-s2.0-0028443740 | en_HK |
dc.identifier.volume | 75 | en_HK |
dc.identifier.issue | 11 | en_HK |
dc.identifier.spage | 7361 | en_HK |
dc.identifier.epage | 7364 | en_HK |
dc.identifier.isi | WOS:A1994NQ26700028 | - |
dc.publisher.place | United States | en_HK |
dc.identifier.scopusauthorid | Chen, TP=36442234400 | en_HK |
dc.identifier.scopusauthorid | Lee, TC=36347141200 | en_HK |
dc.identifier.scopusauthorid | Fung, S=7201970040 | en_HK |
dc.identifier.scopusauthorid | Beling, CD=7005864180 | en_HK |
dc.identifier.issnl | 0021-8979 | - |