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Article: Determination of leakage resistance of Schottky contacts by photovoltage measurements

TitleDetermination of leakage resistance of Schottky contacts by photovoltage measurements
Authors
Issue Date1994
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal Of Applied Physics, 1994, v. 75 n. 11, p. 7361-7364 How to Cite?
AbstractThe leakage resistance of Schottky contacts has been determined from photovoltage measurements, thus allowing the contribution of the leakage current to the current transport in the Schottky contacts to be easily evaluated. It is found that under identical conditions of sample fabrication, different Schottky contacts have nearly the same leakage resistance. A comparison between a theoretical calculation and experimental data for the photocurrent-photovoltage relationship shows that the leakage current becomes dominant at low temperatures and small photocurrents. In these regimes, the current transport is dominated by the leakage current, and as a result, a linear relation (the Ohmic rule) between the photocurrent and the photovoltage is observed.
Persistent Identifierhttp://hdl.handle.net/10722/174710
ISSN
2015 Impact Factor: 2.101
2015 SCImago Journal Rankings: 0.603
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorChen, TPen_HK
dc.contributor.authorLee, TCen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorBeling, CDen_HK
dc.date.accessioned2012-11-26T08:46:59Z-
dc.date.available2012-11-26T08:46:59Z-
dc.date.issued1994en_HK
dc.identifier.citationJournal Of Applied Physics, 1994, v. 75 n. 11, p. 7361-7364en_HK
dc.identifier.issn0021-8979en_HK
dc.identifier.urihttp://hdl.handle.net/10722/174710-
dc.description.abstractThe leakage resistance of Schottky contacts has been determined from photovoltage measurements, thus allowing the contribution of the leakage current to the current transport in the Schottky contacts to be easily evaluated. It is found that under identical conditions of sample fabrication, different Schottky contacts have nearly the same leakage resistance. A comparison between a theoretical calculation and experimental data for the photocurrent-photovoltage relationship shows that the leakage current becomes dominant at low temperatures and small photocurrents. In these regimes, the current transport is dominated by the leakage current, and as a result, a linear relation (the Ohmic rule) between the photocurrent and the photovoltage is observed.en_HK
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_HK
dc.relation.ispartofJournal of Applied Physicsen_HK
dc.titleDetermination of leakage resistance of Schottky contacts by photovoltage measurementsen_HK
dc.typeArticleen_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1063/1.356649en_HK
dc.identifier.scopuseid_2-s2.0-0028443740en_HK
dc.identifier.volume75en_HK
dc.identifier.issue11en_HK
dc.identifier.spage7361en_HK
dc.identifier.epage7364en_HK
dc.identifier.isiWOS:A1994NQ26700028-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridChen, TP=36442234400en_HK
dc.identifier.scopusauthoridLee, TC=36347141200en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK

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