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Article: A photovoltaic study of current transport and its influence on the determination of the Schottky barrier height in Schottky diodes

TitleA photovoltaic study of current transport and its influence on the determination of the Schottky barrier height in Schottky diodes
Authors
Issue Date1993
PublisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/sst
Citation
Semiconductor Science And Technology, 1993, v. 8 n. 12, p. 2085-2091 How to Cite?
AbstractCurrent transport processes including thermionic emission, tunnelling and carrier recombination at the Au/n-Si and Au/n-GaAs interfaces are studied by photovoltage measurements in the temperature range 60-300 K. The Schottky barrier heights (SBH) are also determined from the photovoltage measurements at various temperatures, and the influence of these current transport processes on the determination of the SBH is investigated. It is shown that, at room temperature, as the current transport is dominated by the thermionic emission, the SBH obtained is reliable and is in very good agreement with that obtained from our internal photoemission, I-V and C-V measurements. However, as the temperature decreases the contribution of the recombination current increases, and this leads to a decrease of the SBH. This situation is similar to that in the I-V measurements, but such a positive temperature dependence of the SBH conflicts with the results from the C-V and the internal photoemission measurements, which show that the temperature dependence of the SBH in Au/n-Si is almost identical to that of the indirect bandgap in silicon, while the SBH in Au/n-GaAs has no temperature dependence.
Persistent Identifierhttp://hdl.handle.net/10722/174704
ISSN
2015 Impact Factor: 2.098
2015 SCImago Journal Rankings: 0.676
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorChen, TPen_HK
dc.contributor.authorLee, TCen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorBeling, CDen_HK
dc.date.accessioned2012-11-26T08:46:57Z-
dc.date.available2012-11-26T08:46:57Z-
dc.date.issued1993en_HK
dc.identifier.citationSemiconductor Science And Technology, 1993, v. 8 n. 12, p. 2085-2091en_HK
dc.identifier.issn0268-1242en_HK
dc.identifier.urihttp://hdl.handle.net/10722/174704-
dc.description.abstractCurrent transport processes including thermionic emission, tunnelling and carrier recombination at the Au/n-Si and Au/n-GaAs interfaces are studied by photovoltage measurements in the temperature range 60-300 K. The Schottky barrier heights (SBH) are also determined from the photovoltage measurements at various temperatures, and the influence of these current transport processes on the determination of the SBH is investigated. It is shown that, at room temperature, as the current transport is dominated by the thermionic emission, the SBH obtained is reliable and is in very good agreement with that obtained from our internal photoemission, I-V and C-V measurements. However, as the temperature decreases the contribution of the recombination current increases, and this leads to a decrease of the SBH. This situation is similar to that in the I-V measurements, but such a positive temperature dependence of the SBH conflicts with the results from the C-V and the internal photoemission measurements, which show that the temperature dependence of the SBH in Au/n-Si is almost identical to that of the indirect bandgap in silicon, while the SBH in Au/n-GaAs has no temperature dependence.en_HK
dc.languageengen_US
dc.publisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/ssten_HK
dc.relation.ispartofSemiconductor Science and Technologyen_HK
dc.titleA photovoltaic study of current transport and its influence on the determination of the Schottky barrier height in Schottky diodesen_HK
dc.typeArticleen_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1088/0268-1242/8/12/009en_HK
dc.identifier.scopuseid_2-s2.0-0027873321en_HK
dc.identifier.volume8en_HK
dc.identifier.issue12en_HK
dc.identifier.spage2085en_HK
dc.identifier.epage2091en_HK
dc.identifier.isiWOS:A1993MP12700009-
dc.publisher.placeUnited Kingdomen_HK
dc.identifier.scopusauthoridChen, TP=36442234400en_HK
dc.identifier.scopusauthoridLee, TC=36347141200en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK

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