File Download
There are no files associated with this item.
Links for fulltext
(May Require Subscription)
- Publisher Website: 10.1088/0268-1242/8/5/016
- Scopus: eid_2-s2.0-0027594984
- WOS: WOS:A1993LB61600016
- Find via
Supplementary
- Citations:
- Appears in Collections:
Article: Reverse I-V characteristics of Au/semi-insulating InP (100)
Title | Reverse I-V characteristics of Au/semi-insulating InP (100) |
---|---|
Authors | |
Issue Date | 1993 |
Publisher | Institute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/sst |
Citation | Semiconductor Science And Technology, 1993, v. 8 n. 5, p. 709-711 How to Cite? |
Abstract | The I-V characteristics of Au/semi-insulating InP (100) under reversed bias have been measured between 230 K and 290 K. A simple model based on the thermionic field emission theory (TFE) is proposed to describe this system. Based on this model, the value of the bandgap obtained from the I-V characteristics is in reasonable agreement with the literature. At room temperature, the corresponding fitted values of the barrier height Phi b and the series bulk resistance R b are 0.68+or-0.05 V and 1.320 7 Omega respectively. |
Persistent Identifier | http://hdl.handle.net/10722/174696 |
ISSN | 2023 Impact Factor: 1.9 2023 SCImago Journal Rankings: 0.411 |
ISI Accession Number ID |
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, TC | en_HK |
dc.contributor.author | Au, HL | en_HK |
dc.contributor.author | Chen, TP | en_HK |
dc.contributor.author | Ling, CC | en_HK |
dc.contributor.author | Fung, S | en_HK |
dc.contributor.author | Beling, CD | en_HK |
dc.date.accessioned | 2012-11-26T08:46:55Z | - |
dc.date.available | 2012-11-26T08:46:55Z | - |
dc.date.issued | 1993 | en_HK |
dc.identifier.citation | Semiconductor Science And Technology, 1993, v. 8 n. 5, p. 709-711 | en_HK |
dc.identifier.issn | 0268-1242 | en_HK |
dc.identifier.uri | http://hdl.handle.net/10722/174696 | - |
dc.description.abstract | The I-V characteristics of Au/semi-insulating InP (100) under reversed bias have been measured between 230 K and 290 K. A simple model based on the thermionic field emission theory (TFE) is proposed to describe this system. Based on this model, the value of the bandgap obtained from the I-V characteristics is in reasonable agreement with the literature. At room temperature, the corresponding fitted values of the barrier height Phi b and the series bulk resistance R b are 0.68+or-0.05 V and 1.320 7 Omega respectively. | en_HK |
dc.language | eng | en_US |
dc.publisher | Institute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/sst | en_HK |
dc.relation.ispartof | Semiconductor Science and Technology | en_HK |
dc.title | Reverse I-V characteristics of Au/semi-insulating InP (100) | en_HK |
dc.type | Article | en_HK |
dc.identifier.email | Ling, CC: ccling@hkucc.hku.hk | en_HK |
dc.identifier.email | Fung, S: sfung@hku.hk | en_HK |
dc.identifier.email | Beling, CD: cdbeling@hkucc.hku.hk | en_HK |
dc.identifier.authority | Ling, CC=rp00747 | en_HK |
dc.identifier.authority | Fung, S=rp00695 | en_HK |
dc.identifier.authority | Beling, CD=rp00660 | en_HK |
dc.description.nature | link_to_subscribed_fulltext | en_US |
dc.identifier.doi | 10.1088/0268-1242/8/5/016 | en_HK |
dc.identifier.scopus | eid_2-s2.0-0027594984 | en_HK |
dc.identifier.volume | 8 | en_HK |
dc.identifier.issue | 5 | en_HK |
dc.identifier.spage | 709 | en_HK |
dc.identifier.epage | 711 | en_HK |
dc.identifier.isi | WOS:A1993LB61600016 | - |
dc.publisher.place | United Kingdom | en_HK |
dc.identifier.scopusauthorid | Lee, TC=36347141200 | en_HK |
dc.identifier.scopusauthorid | Au, HL=7004152230 | en_HK |
dc.identifier.scopusauthorid | Chen, TP=36442234400 | en_HK |
dc.identifier.scopusauthorid | Ling, CC=13310239300 | en_HK |
dc.identifier.scopusauthorid | Fung, S=7201970040 | en_HK |
dc.identifier.scopusauthorid | Beling, CD=7005864180 | en_HK |
dc.identifier.issnl | 0268-1242 | - |