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Article: Carrier nonresonant tunneling in asymmetric coupled double quantum wells

TitleCarrier nonresonant tunneling in asymmetric coupled double quantum wells
Authors
Issue Date1992
PublisherAcademic Press. The Journal's web site is located at http://www.elsevier.com/locate/superlattices
Citation
Superlattices And Microstructures, 1992, v. 12 n. 2, p. 231-235 How to Cite?
AbstractThe excitation power dependence of nonresonant tunneling rates for photogenerated carriers is studied in a GaAs/Al0.35Ga0.65As/GaAs (50A/40A/100A) asymmetric double quantum well p-i-n structure by photoluminescence (PL) measurement. It is found that PL from the two coupled wells depends strongly on excitation power. Especially, the PL peak intensity of the narrow well rapidly decreases as excitation power increases to a certain extent. The explanation for the strong excitation power dependence of the carrier tunneling rates is that LO-phonon-assisted tunneling enhances the rates significantly because of energy-band flattening due to the spatial separation of electrons and holes between the two coupled wells. Our results may be of significance in creating novel alloptical devices. © 1992.
Persistent Identifierhttp://hdl.handle.net/10722/174694
ISSN
2015 Impact Factor: 2.117
2015 SCImago Journal Rankings: 0.597

 

DC FieldValueLanguage
dc.contributor.authorXu, Sen_US
dc.contributor.authorJiang, Den_US
dc.contributor.authorLi, Gen_US
dc.contributor.authorLuo, Jen_US
dc.date.accessioned2012-11-26T08:46:55Z-
dc.date.available2012-11-26T08:46:55Z-
dc.date.issued1992en_US
dc.identifier.citationSuperlattices And Microstructures, 1992, v. 12 n. 2, p. 231-235en_US
dc.identifier.issn0749-6036en_US
dc.identifier.urihttp://hdl.handle.net/10722/174694-
dc.description.abstractThe excitation power dependence of nonresonant tunneling rates for photogenerated carriers is studied in a GaAs/Al0.35Ga0.65As/GaAs (50A/40A/100A) asymmetric double quantum well p-i-n structure by photoluminescence (PL) measurement. It is found that PL from the two coupled wells depends strongly on excitation power. Especially, the PL peak intensity of the narrow well rapidly decreases as excitation power increases to a certain extent. The explanation for the strong excitation power dependence of the carrier tunneling rates is that LO-phonon-assisted tunneling enhances the rates significantly because of energy-band flattening due to the spatial separation of electrons and holes between the two coupled wells. Our results may be of significance in creating novel alloptical devices. © 1992.en_US
dc.languageengen_US
dc.publisherAcademic Press. The Journal's web site is located at http://www.elsevier.com/locate/superlatticesen_US
dc.relation.ispartofSuperlattices and Microstructuresen_US
dc.titleCarrier nonresonant tunneling in asymmetric coupled double quantum wellsen_US
dc.typeArticleen_US
dc.identifier.emailXu, S: sjxu@hku.hken_US
dc.identifier.authorityXu, S=rp00821en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0026998532en_US
dc.identifier.volume12en_US
dc.identifier.issue2en_US
dc.identifier.spage231en_US
dc.identifier.epage235en_US
dc.publisher.placeUnited Kingdomen_US
dc.identifier.scopusauthoridXu, S=7404439005en_US
dc.identifier.scopusauthoridJiang, D=7401574189en_US
dc.identifier.scopusauthoridLi, G=8161794300en_US
dc.identifier.scopusauthoridLuo, J=7404182734en_US

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