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Article: Optical investigation of delta-doping in quantum well structures

TitleOptical investigation of delta-doping in quantum well structures
Authors
Issue Date1990
Citation
Pan Tao Ti Hsueh Pao/Chinese Journal Of Semiconductors, 1990, v. 11 n. 4, p. 316-318 How to Cite?
AbstractUsing delta-doping technique, the precise location of Be acceptors both in the center of the quantum well and near the interface has been obtained. The photoluminescence measurement has been used to demonstrate the effect of o-doping. We have artificially verified for the first time the theory of the density distribution of hydrogenic impurity states in quantum well structures.
Persistent Identifierhttp://hdl.handle.net/10722/174688
ISSN

 

DC FieldValueLanguage
dc.contributor.authorXu, Zhongyingen_US
dc.contributor.authorXie, Maohaien_US
dc.contributor.authorXu, Qiangen_US
dc.contributor.authorZheng, Baozhenen_US
dc.contributor.authorKong, Meiyingen_US
dc.date.accessioned2012-11-26T08:46:53Z-
dc.date.available2012-11-26T08:46:53Z-
dc.date.issued1990en_US
dc.identifier.citationPan Tao Ti Hsueh Pao/Chinese Journal Of Semiconductors, 1990, v. 11 n. 4, p. 316-318en_US
dc.identifier.issn0253-4177en_US
dc.identifier.urihttp://hdl.handle.net/10722/174688-
dc.description.abstractUsing delta-doping technique, the precise location of Be acceptors both in the center of the quantum well and near the interface has been obtained. The photoluminescence measurement has been used to demonstrate the effect of o-doping. We have artificially verified for the first time the theory of the density distribution of hydrogenic impurity states in quantum well structures.en_US
dc.languageengen_US
dc.relation.ispartofPan Tao Ti Hsueh Pao/Chinese Journal of Semiconductorsen_US
dc.titleOptical investigation of delta-doping in quantum well structuresen_US
dc.typeArticleen_US
dc.identifier.emailXie, Maohai: mhxie@hku.hken_US
dc.identifier.authorityXie, Maohai=rp00818en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0025418132en_US
dc.identifier.volume11en_US
dc.identifier.issue4en_US
dc.identifier.spage316en_US
dc.identifier.epage318en_US
dc.publisher.placeChinaen_US
dc.identifier.scopusauthoridXu, Zhongying=7405429019en_US
dc.identifier.scopusauthoridXie, Maohai=7202255416en_US
dc.identifier.scopusauthoridXu, Qiang=10040708200en_US
dc.identifier.scopusauthoridZheng, Baozhen=7201781528en_US
dc.identifier.scopusauthoridKong, Meiying=7103007528en_US
dc.identifier.issnl0253-4177-

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