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Article: A study of the Cr and Fe deep acceptors in InP by the nuclear transmutation back doping technique

TitleA study of the Cr and Fe deep acceptors in InP by the nuclear transmutation back doping technique
Authors
Issue Date1985
PublisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/Journals/jpd
Citation
Journal Of Physics D: Applied Physics, 1985, v. 18 n. 2, p. 259-267 How to Cite?
AbstractThis paper reports the use of the nuclear transmutation back doping technique for studying the deep Cr and Fe acceptors in InP. The authors have demonstrated the changes in the electrical characteristics and the photoconductivity spectra for the InP materials studied brought about by this shallow donor compensation technique. In InP:Cr, it has been shown that the E vb+0.95 eV level belongs to the Cr 2- lower charge state. In InP:Fe, it has been possible to confirm some of the optical transitions involving both Fe 3- and Fe 2-. In particular, this work has confirmed that the deep level E cb-0.66 eV is the ground state of Fe 2-. This investigation has also allowed the authors to estimate the Fe doping concentration in a heavily doped sample and this has been found to be approximately 4.8*10 16 cm -3.
Persistent Identifierhttp://hdl.handle.net/10722/174678
ISSN
2015 Impact Factor: 2.772
2015 SCImago Journal Rankings: 0.682
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorFung, Sen_US
dc.contributor.authorNicholas, RJen_US
dc.date.accessioned2012-11-26T08:46:50Z-
dc.date.available2012-11-26T08:46:50Z-
dc.date.issued1985en_US
dc.identifier.citationJournal Of Physics D: Applied Physics, 1985, v. 18 n. 2, p. 259-267en_US
dc.identifier.issn0022-3727en_US
dc.identifier.urihttp://hdl.handle.net/10722/174678-
dc.description.abstractThis paper reports the use of the nuclear transmutation back doping technique for studying the deep Cr and Fe acceptors in InP. The authors have demonstrated the changes in the electrical characteristics and the photoconductivity spectra for the InP materials studied brought about by this shallow donor compensation technique. In InP:Cr, it has been shown that the E vb+0.95 eV level belongs to the Cr 2- lower charge state. In InP:Fe, it has been possible to confirm some of the optical transitions involving both Fe 3- and Fe 2-. In particular, this work has confirmed that the deep level E cb-0.66 eV is the ground state of Fe 2-. This investigation has also allowed the authors to estimate the Fe doping concentration in a heavily doped sample and this has been found to be approximately 4.8*10 16 cm -3.en_US
dc.languageengen_US
dc.publisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/Journals/jpden_US
dc.relation.ispartofJournal of Physics D: Applied Physicsen_US
dc.titleA study of the Cr and Fe deep acceptors in InP by the nuclear transmutation back doping techniqueen_US
dc.typeArticleen_US
dc.identifier.emailFung, S: sfung@hku.hken_US
dc.identifier.authorityFung, S=rp00695en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1088/0022-3727/18/2/013en_US
dc.identifier.scopuseid_2-s2.0-0022014144en_US
dc.identifier.volume18en_US
dc.identifier.issue2en_US
dc.identifier.spage259en_US
dc.identifier.epage267en_US
dc.identifier.isiWOS:A1985ACB9400013-
dc.publisher.placeUnited Kingdomen_US
dc.identifier.scopusauthoridFung, S=7201970040en_US
dc.identifier.scopusauthoridNicholas, RJ=7102569757en_US

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