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Article: Strong influence of SiO 2 thin film on properties of GaN epilayers

TitleStrong influence of SiO 2 thin film on properties of GaN epilayers
Authors
Issue Date1999
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 1999, v. 74 n. 6, p. 818-820 How to Cite?
AbstractIn this letter, we report strong degradation of photoluminescence (PL) performance of GaN epilayers due to SiO 2 layers that were deposited on GaN surfaces by electron-beam evaporation. Secondary ion mass spectrometry measurements show that the oxygen concentration of GaN with SiO 2 layers is one order of magnitude more than that of as-grown GaN. This fact indicates that oxygen can very easily replace nitrogen in GaN. It was also found that rapid thermal processing can recover and improve the optical quality of GaN with SiO 2 layer. As a reference, Si xN y was found to have little effect on PL performance of GaN. © 1999 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/174657
ISSN
2015 Impact Factor: 3.142
2015 SCImago Journal Rankings: 1.105
References

 

DC FieldValueLanguage
dc.contributor.authorWang, XCen_US
dc.contributor.authorXu, SJen_US
dc.contributor.authorChua, SJen_US
dc.contributor.authorLi, Ken_US
dc.contributor.authorZhang, XHen_US
dc.contributor.authorZhang, ZHen_US
dc.contributor.authorChong, KBen_US
dc.contributor.authorZhang, Xen_US
dc.date.accessioned2012-11-26T08:46:45Z-
dc.date.available2012-11-26T08:46:45Z-
dc.date.issued1999en_US
dc.identifier.citationApplied Physics Letters, 1999, v. 74 n. 6, p. 818-820en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://hdl.handle.net/10722/174657-
dc.description.abstractIn this letter, we report strong degradation of photoluminescence (PL) performance of GaN epilayers due to SiO 2 layers that were deposited on GaN surfaces by electron-beam evaporation. Secondary ion mass spectrometry measurements show that the oxygen concentration of GaN with SiO 2 layers is one order of magnitude more than that of as-grown GaN. This fact indicates that oxygen can very easily replace nitrogen in GaN. It was also found that rapid thermal processing can recover and improve the optical quality of GaN with SiO 2 layer. As a reference, Si xN y was found to have little effect on PL performance of GaN. © 1999 American Institute of Physics.en_US
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_US
dc.relation.ispartofApplied Physics Lettersen_US
dc.titleStrong influence of SiO 2 thin film on properties of GaN epilayersen_US
dc.typeArticleen_US
dc.identifier.emailXu, SJ: sjxu@hku.hken_US
dc.identifier.authorityXu, SJ=rp00821en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0002924690en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0002924690&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume74en_US
dc.identifier.issue6en_US
dc.identifier.spage818en_US
dc.identifier.epage820en_US
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridWang, XC=9333737100en_US
dc.identifier.scopusauthoridXu, SJ=7404439005en_US
dc.identifier.scopusauthoridChua, SJ=35516064500en_US
dc.identifier.scopusauthoridLi, K=36067845200en_US
dc.identifier.scopusauthoridZhang, XH=8543612300en_US
dc.identifier.scopusauthoridZhang, ZH=8241791600en_US
dc.identifier.scopusauthoridChong, KB=7102554114en_US
dc.identifier.scopusauthoridZhang, X=7410271535en_US

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