File Download

There are no files associated with this item.

  Links for fulltext
     (May Require Subscription)
Supplementary

Article: A systematic approach to the measurement of ideality factor, series resistance, and barrier height for Schottky diodes

TitleA systematic approach to the measurement of ideality factor, series resistance, and barrier height for Schottky diodes
Authors
Lee, TCFung, SBeling, CDAu, HL
Issue Date1992
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal of Applied Physics, 1992, v. 72 n. 10, p. 4739-4742 How to Cite?
DOI: http://dx.doi.org/10.1063/1.352082
AbstractA nongraphical approach is proposed for measuring and evaluating the ideality n factor and the series resistance of a Schottky diode. The approach involves the use of an auxiliary function and a computer-fitting routine. This technique has been found to be both accurate and reliable. The validity of this has also been confirmed by way of I-V measurements using both commercially available and laboratory-prepared Schottky diodes.
Persistent Identifierhttp://hdl.handle.net/10722/174637
ISSN
0021-8979
2021 Impact Factor: 2.877
2020 SCImago Journal Rankings: 0.699
ISI Accession Number ID
WOS:A1992JX76600035

 

DC FieldValueLanguage
dc.contributor.authorLee, TCen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorBeling, CDen_HK
dc.contributor.authorAu, HLen_HK
dc.date.accessioned2012-11-26T08:46:38Z-
dc.date.available2012-11-26T08:46:38Z-
dc.date.issued1992en_HK
dc.identifier.citationJournal of Applied Physics, 1992, v. 72 n. 10, p. 4739-4742-
dc.identifier.issn0021-8979en_HK
dc.identifier.urihttp://hdl.handle.net/10722/174637-
dc.description.abstractA nongraphical approach is proposed for measuring and evaluating the ideality n factor and the series resistance of a Schottky diode. The approach involves the use of an auxiliary function and a computer-fitting routine. This technique has been found to be both accurate and reliable. The validity of this has also been confirmed by way of I-V measurements using both commercially available and laboratory-prepared Schottky diodes.en_HK
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_HK
dc.relation.ispartofJournal of Applied Physicsen_HK
dc.titleA systematic approach to the measurement of ideality factor, series resistance, and barrier height for Schottky diodesen_HK
dc.typeArticleen_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1063/1.352082en_HK
dc.identifier.scopuseid_2-s2.0-0001282904en_HK
dc.identifier.volume72en_HK
dc.identifier.issue10en_HK
dc.identifier.spage4739en_HK
dc.identifier.epage4742en_HK
dc.identifier.isiWOS:A1992JX76600035-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridLee, TC=36347141200en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK
dc.identifier.scopusauthoridAu, HL=7004152230en_HK
dc.identifier.citeulike11251926-
dc.identifier.issnl0021-8979-

Export via OAI-PMH Interface in XML Formats

OR

Export to Other Non-XML Formats