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Article: Formation of the goss texture in a thin foil experiment on Fe-3.2%Si

TitleFormation of the goss texture in a thin foil experiment on Fe-3.2%Si
Authors
KeywordsGoss Texture
Orientation Imaging Microscopy (Oim)
Secondary Recrystallization
Silicon Segregation To Grain Boundaries
Issue Date2010
Citation
ISIJ International, 2010, v. 50 n. 2, p. 264-271 How to Cite?
AbstractFe-3.2%Si steel from a commercial source supplied in the form of fully recrystallized sheet was selectively thinned to produce foils of different thicknesses which separated the subsurface layers in which the η texture dominated, from the central layer of γ texture. Goss oriented grains were more frequent in the subsurface layers, but were also present in the central portion of the material. Annealing these foils at ∼1000°C produced Goss texture in the surface foil, and {111 }(hkl) in the central foil. From these experiments it is clear that Goss secondaries grow easily in the η layer, but not in the γ layer and this was proved in a sequential heating experiment. A search of the misorientations between Goss oriented primary recrystallised grains in the η oriented volumes, for the most likely CSLs, i.e., Σ5 and Σ13a, proved to be unsuccessful. Some were found, but not in sufficient numbers to provide a satisfactory explanation for the formation of Goss secondaries. It is suggested however, that if CSLs are important in the selection of Goss secondaries, that Si segregation has also to be considered, for this will be less in special boundaries and thus provide less solute drag. © 2010 ISIJ.
Persistent Identifierhttp://hdl.handle.net/10722/174072
ISSN
2015 Impact Factor: 0.96
2015 SCImago Journal Rankings: 1.108
References

 

DC FieldValueLanguage
dc.contributor.authorQuadir, MZen_US
dc.contributor.authorChang, CSTen_US
dc.contributor.authorDuggan, BJen_US
dc.date.accessioned2012-11-14T06:20:30Z-
dc.date.available2012-11-14T06:20:30Z-
dc.date.issued2010en_US
dc.identifier.citationISIJ International, 2010, v. 50 n. 2, p. 264-271en_US
dc.identifier.issn0915-1559en_US
dc.identifier.urihttp://hdl.handle.net/10722/174072-
dc.description.abstractFe-3.2%Si steel from a commercial source supplied in the form of fully recrystallized sheet was selectively thinned to produce foils of different thicknesses which separated the subsurface layers in which the η texture dominated, from the central layer of γ texture. Goss oriented grains were more frequent in the subsurface layers, but were also present in the central portion of the material. Annealing these foils at ∼1000°C produced Goss texture in the surface foil, and {111 }(hkl) in the central foil. From these experiments it is clear that Goss secondaries grow easily in the η layer, but not in the γ layer and this was proved in a sequential heating experiment. A search of the misorientations between Goss oriented primary recrystallised grains in the η oriented volumes, for the most likely CSLs, i.e., Σ5 and Σ13a, proved to be unsuccessful. Some were found, but not in sufficient numbers to provide a satisfactory explanation for the formation of Goss secondaries. It is suggested however, that if CSLs are important in the selection of Goss secondaries, that Si segregation has also to be considered, for this will be less in special boundaries and thus provide less solute drag. © 2010 ISIJ.en_US
dc.languageengen_US
dc.relation.ispartofISIJ Internationalen_US
dc.subjectGoss Textureen_US
dc.subjectOrientation Imaging Microscopy (Oim)en_US
dc.subjectSecondary Recrystallizationen_US
dc.subjectSilicon Segregation To Grain Boundariesen_US
dc.titleFormation of the goss texture in a thin foil experiment on Fe-3.2%Sien_US
dc.typeArticleen_US
dc.identifier.emailDuggan, BJ: bjduggan@hkucc.hku.hken_US
dc.identifier.authorityDuggan, BJ=rp01686en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.2355/isijinternational.50.264en_US
dc.identifier.scopuseid_2-s2.0-77952258791en_US
dc.identifier.hkuros170845-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-77952258791&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume50en_US
dc.identifier.issue2en_US
dc.identifier.spage264en_US
dc.identifier.epage271en_US
dc.publisher.placeJapanen_US
dc.identifier.scopusauthoridQuadir, MZ=55397470000en_US
dc.identifier.scopusauthoridChang, CST=8400474300en_US
dc.identifier.scopusauthoridDuggan, BJ=7005772998en_US

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