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Article: Formation of the goss texture in a thin foil experiment on Fe-3.2%Si
Title | Formation of the goss texture in a thin foil experiment on Fe-3.2%Si |
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Authors | |
Keywords | Goss Texture Orientation Imaging Microscopy (Oim) Secondary Recrystallization Silicon Segregation To Grain Boundaries |
Issue Date | 2010 |
Citation | ISIJ International, 2010, v. 50 n. 2, p. 264-271 How to Cite? |
Abstract | Fe-3.2%Si steel from a commercial source supplied in the form of fully recrystallized sheet was selectively thinned to produce foils of different thicknesses which separated the subsurface layers in which the η texture dominated, from the central layer of γ texture. Goss oriented grains were more frequent in the subsurface layers, but were also present in the central portion of the material. Annealing these foils at ∼1000°C produced Goss texture in the surface foil, and {111 }(hkl) in the central foil. From these experiments it is clear that Goss secondaries grow easily in the η layer, but not in the γ layer and this was proved in a sequential heating experiment. A search of the misorientations between Goss oriented primary recrystallised grains in the η oriented volumes, for the most likely CSLs, i.e., Σ5 and Σ13a, proved to be unsuccessful. Some were found, but not in sufficient numbers to provide a satisfactory explanation for the formation of Goss secondaries. It is suggested however, that if CSLs are important in the selection of Goss secondaries, that Si segregation has also to be considered, for this will be less in special boundaries and thus provide less solute drag. © 2010 ISIJ. |
Persistent Identifier | http://hdl.handle.net/10722/174072 |
ISSN | 2023 Impact Factor: 1.6 2023 SCImago Journal Rankings: 0.519 |
ISI Accession Number ID | |
References |
DC Field | Value | Language |
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dc.contributor.author | Quadir, MZ | en_US |
dc.contributor.author | Chang, CST | en_US |
dc.contributor.author | Duggan, BJ | en_US |
dc.date.accessioned | 2012-11-14T06:20:30Z | - |
dc.date.available | 2012-11-14T06:20:30Z | - |
dc.date.issued | 2010 | en_US |
dc.identifier.citation | ISIJ International, 2010, v. 50 n. 2, p. 264-271 | en_US |
dc.identifier.issn | 0915-1559 | en_US |
dc.identifier.uri | http://hdl.handle.net/10722/174072 | - |
dc.description.abstract | Fe-3.2%Si steel from a commercial source supplied in the form of fully recrystallized sheet was selectively thinned to produce foils of different thicknesses which separated the subsurface layers in which the η texture dominated, from the central layer of γ texture. Goss oriented grains were more frequent in the subsurface layers, but were also present in the central portion of the material. Annealing these foils at ∼1000°C produced Goss texture in the surface foil, and {111 }(hkl) in the central foil. From these experiments it is clear that Goss secondaries grow easily in the η layer, but not in the γ layer and this was proved in a sequential heating experiment. A search of the misorientations between Goss oriented primary recrystallised grains in the η oriented volumes, for the most likely CSLs, i.e., Σ5 and Σ13a, proved to be unsuccessful. Some were found, but not in sufficient numbers to provide a satisfactory explanation for the formation of Goss secondaries. It is suggested however, that if CSLs are important in the selection of Goss secondaries, that Si segregation has also to be considered, for this will be less in special boundaries and thus provide less solute drag. © 2010 ISIJ. | en_US |
dc.language | eng | en_US |
dc.relation.ispartof | ISIJ International | en_US |
dc.subject | Goss Texture | en_US |
dc.subject | Orientation Imaging Microscopy (Oim) | en_US |
dc.subject | Secondary Recrystallization | en_US |
dc.subject | Silicon Segregation To Grain Boundaries | en_US |
dc.title | Formation of the goss texture in a thin foil experiment on Fe-3.2%Si | en_US |
dc.type | Article | en_US |
dc.identifier.email | Duggan, BJ: bjduggan@hkucc.hku.hk | en_US |
dc.identifier.authority | Duggan, BJ=rp01686 | en_US |
dc.description.nature | link_to_subscribed_fulltext | en_US |
dc.identifier.doi | 10.2355/isijinternational.50.264 | en_US |
dc.identifier.scopus | eid_2-s2.0-77952258791 | en_US |
dc.identifier.hkuros | 170845 | - |
dc.relation.references | http://www.scopus.com/mlt/select.url?eid=2-s2.0-77952258791&selection=ref&src=s&origin=recordpage | en_US |
dc.identifier.volume | 50 | en_US |
dc.identifier.issue | 2 | en_US |
dc.identifier.spage | 264 | en_US |
dc.identifier.epage | 271 | en_US |
dc.identifier.isi | WOS:000275434300013 | - |
dc.publisher.place | Japan | en_US |
dc.identifier.scopusauthorid | Quadir, MZ=55397470000 | en_US |
dc.identifier.scopusauthorid | Chang, CST=8400474300 | en_US |
dc.identifier.scopusauthorid | Duggan, BJ=7005772998 | en_US |
dc.identifier.issnl | 0915-1559 | - |