File Download

There are no files associated with this item.

  Links for fulltext
     (May Require Subscription)
Supplementary

Conference Paper: Thermal diffusion studies of MBE-grown ZnSe/Fe/ZnSe and ZnS/Fe/ZnS structures

TitleThermal diffusion studies of MBE-grown ZnSe/Fe/ZnSe and ZnS/Fe/ZnS structures
Authors
KeywordsA1. Secondary Ion Mass Spectroscopy
A3. Molecular Beam Epitaxy
A3. Thermal Diffusion
B1. Zns/Fe/Zns
B1. Znse/Fe/Znse
Issue Date2005
PublisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/jcrysgro
Citation
Journal Of Crystal Growth, 2005, v. 278 n. 1-4, p. 282-287 How to Cite?
AbstractThis study focused on the investigation of the thermal stability of Fe on ZnSe and ZnS matrix using secondary ion mass spectroscopy (SIMS). Sandwiched three layer source structures of ZnSe/Fe/ZnSe and ZnS/Fe/ZnS were grown on GaAs and GaP substrates, respectively, by the molecular beam epitaxy technique. The bottom II-VI layers and the Fe- sandwiched layers in these structures are single crystalline while the top II-VI layers are polycrystalline. Thermal annealing was conducted in a range covering from 320 to 550 °C. The SIMS depth profiles of the as-grown and annealed structures reveal that (1 0 0) oriented single crystalline Fe/ZnSe interface is thermally stable at temperature as high as 450 °C while its polycrystalline counterpart suffers from fast diffusion even at the growth temperature. In contrast, (1 0 0) oriented polycrystalline Fe/ZnS interface is quite stable at least up to 200 °C. For both ZnSe/Fe/ZnSe and ZnS/Fe/ZnS systems, (1 1 1) oriented structures were found to have lower thermal stability than (1 0 0) oriented ones. These results provide important findings towards the optimization of Fe-based tunneling magneto-resistance structures using a II-VI semiconductor barrier. © Published by Elsevier B.V.
Persistent Identifierhttp://hdl.handle.net/10722/173451
ISSN
2015 Impact Factor: 1.462
2015 SCImago Journal Rankings: 0.752
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorSou, IKen_US
dc.contributor.authorWang, Cen_US
dc.contributor.authorChan, SKen_US
dc.contributor.authorWong, GKLen_US
dc.date.accessioned2012-10-30T06:31:43Z-
dc.date.available2012-10-30T06:31:43Z-
dc.date.issued2005en_US
dc.identifier.citationJournal Of Crystal Growth, 2005, v. 278 n. 1-4, p. 282-287en_US
dc.identifier.issn0022-0248en_US
dc.identifier.urihttp://hdl.handle.net/10722/173451-
dc.description.abstractThis study focused on the investigation of the thermal stability of Fe on ZnSe and ZnS matrix using secondary ion mass spectroscopy (SIMS). Sandwiched three layer source structures of ZnSe/Fe/ZnSe and ZnS/Fe/ZnS were grown on GaAs and GaP substrates, respectively, by the molecular beam epitaxy technique. The bottom II-VI layers and the Fe- sandwiched layers in these structures are single crystalline while the top II-VI layers are polycrystalline. Thermal annealing was conducted in a range covering from 320 to 550 °C. The SIMS depth profiles of the as-grown and annealed structures reveal that (1 0 0) oriented single crystalline Fe/ZnSe interface is thermally stable at temperature as high as 450 °C while its polycrystalline counterpart suffers from fast diffusion even at the growth temperature. In contrast, (1 0 0) oriented polycrystalline Fe/ZnS interface is quite stable at least up to 200 °C. For both ZnSe/Fe/ZnSe and ZnS/Fe/ZnS systems, (1 1 1) oriented structures were found to have lower thermal stability than (1 0 0) oriented ones. These results provide important findings towards the optimization of Fe-based tunneling magneto-resistance structures using a II-VI semiconductor barrier. © Published by Elsevier B.V.en_US
dc.languageengen_US
dc.publisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/jcrysgroen_US
dc.relation.ispartofJournal of Crystal Growthen_US
dc.subjectA1. Secondary Ion Mass Spectroscopyen_US
dc.subjectA3. Molecular Beam Epitaxyen_US
dc.subjectA3. Thermal Diffusionen_US
dc.subjectB1. Zns/Fe/Znsen_US
dc.subjectB1. Znse/Fe/Znseen_US
dc.titleThermal diffusion studies of MBE-grown ZnSe/Fe/ZnSe and ZnS/Fe/ZnS structuresen_US
dc.typeConference_Paperen_US
dc.identifier.emailChan, SK:kwsherry@hku.hken_US
dc.identifier.authorityChan, SK=rp00539en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1016/j.jcrysgro.2004.12.086en_US
dc.identifier.scopuseid_2-s2.0-18444402826en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-18444402826&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume278en_US
dc.identifier.issue1-4en_US
dc.identifier.spage282en_US
dc.identifier.epage287en_US
dc.identifier.isiWOS:000228916300052-
dc.publisher.placeNetherlandsen_US
dc.identifier.scopusauthoridSou, IK=7005758902en_US
dc.identifier.scopusauthoridWang, C=8238738200en_US
dc.identifier.scopusauthoridChan, SK=26424509100en_US
dc.identifier.scopusauthoridWong, GKL=7402527572en_US

Export via OAI-PMH Interface in XML Formats


OR


Export to Other Non-XML Formats