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Article: Molecular-beam-epitaxy-grown CrSeFe bilayer on GaAs(100) substrate

TitleMolecular-beam-epitaxy-grown CrSeFe bilayer on GaAs(100) substrate
Authors
Issue Date2007
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal Of Applied Physics, 2007, v. 102 n. 8 How to Cite?
AbstractA novel CrSeFe bilayer structure has been fabricated on a GaAs (100) substrate by the molecular beam epitaxy technique. Microstructural characterizations have revealed that the Fe layer is a single-crystalline bcc structure with the orientation relationship of (100)Fe ∥ (100)GaAs, while the top CrSe layer shows four preferred hexagonal domains with their c axis each along one of the four upward-pointing 〈111〉 directions of the underlying Fe lattice. The magnetic hysteresis loops of this bilayer structure measured by a superconducting quantum interference device magnetometer demonstrate a strong exchange bias effect with a negative exchange bias field as high as -48.4 Oe at 5 K. The magnetization reversal process shows an abrupt transition nature at temperature from 5 to 300 K. An enhancement of the coercivity not accompanied by the exchange bias field was observed at temperature higher than and well above the blocking temperature. We have interpreted these observations based on the well-established exchange spring model for antiferromagnetic/ferromagnetic bilayer structures. © 2007 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/171945
ISSN
2015 Impact Factor: 2.101
2015 SCImago Journal Rankings: 0.603
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorWang, Cen_US
dc.contributor.authorZhang, Ben_US
dc.contributor.authorYou, Ben_US
dc.contributor.authorLok, SKen_US
dc.contributor.authorChan, SKen_US
dc.contributor.authorZhang, XXen_US
dc.contributor.authorWong, GKLen_US
dc.contributor.authorSou, IKen_US
dc.date.accessioned2012-10-30T06:18:42Z-
dc.date.available2012-10-30T06:18:42Z-
dc.date.issued2007en_US
dc.identifier.citationJournal Of Applied Physics, 2007, v. 102 n. 8en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://hdl.handle.net/10722/171945-
dc.description.abstractA novel CrSeFe bilayer structure has been fabricated on a GaAs (100) substrate by the molecular beam epitaxy technique. Microstructural characterizations have revealed that the Fe layer is a single-crystalline bcc structure with the orientation relationship of (100)Fe ∥ (100)GaAs, while the top CrSe layer shows four preferred hexagonal domains with their c axis each along one of the four upward-pointing 〈111〉 directions of the underlying Fe lattice. The magnetic hysteresis loops of this bilayer structure measured by a superconducting quantum interference device magnetometer demonstrate a strong exchange bias effect with a negative exchange bias field as high as -48.4 Oe at 5 K. The magnetization reversal process shows an abrupt transition nature at temperature from 5 to 300 K. An enhancement of the coercivity not accompanied by the exchange bias field was observed at temperature higher than and well above the blocking temperature. We have interpreted these observations based on the well-established exchange spring model for antiferromagnetic/ferromagnetic bilayer structures. © 2007 American Institute of Physics.en_US
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_US
dc.relation.ispartofJournal of Applied Physicsen_US
dc.titleMolecular-beam-epitaxy-grown CrSeFe bilayer on GaAs(100) substrateen_US
dc.typeArticleen_US
dc.identifier.emailChan, SK:kwsherry@hku.hken_US
dc.identifier.authorityChan, SK=rp00539en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1063/1.2795625en_US
dc.identifier.scopuseid_2-s2.0-35648933971en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-35648933971&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume102en_US
dc.identifier.issue8en_US
dc.identifier.isiWOS:000250589300082-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridWang, C=8238738200en_US
dc.identifier.scopusauthoridZhang, B=14023790900en_US
dc.identifier.scopusauthoridYou, B=7102335404en_US
dc.identifier.scopusauthoridLok, SK=22634672200en_US
dc.identifier.scopusauthoridChan, SK=26424509100en_US
dc.identifier.scopusauthoridZhang, XX=7410264997en_US
dc.identifier.scopusauthoridWong, GKL=7402527572en_US
dc.identifier.scopusauthoridSou, IK=7005758902en_US

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