File Download

There are no files associated with this item.

  Links for fulltext
     (May Require Subscription)
Supplementary

Article: Growth temperature dependence of MBE-grown ZnSe Nanowires

TitleGrowth temperature dependence of MBE-grown ZnSe Nanowires
Authors
KeywordsA1. Growth Models
A2. Single-Crystal Growth
B1. Nanomaterials
B2. Semiconducting Ii-Vi Materials
Issue Date2007
PublisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/jcrysgro
Citation
Journal Of Crystal Growth, 2007, v. 301-302 SPEC. ISS., p. 866-870 How to Cite?
AbstractThe growth orientation and crystalline perfection of ZnSe nanowires (NWs) grown by the combination of molecular beam epitaxy (MBE) and vapor-liquid-solid (VLS) reaction was found dependent on the growth temperature. Transmission electron microscopy (TEM) observations reveal that the preferred growth orientation of NWs depends on both the size of NWs and the growth temperature. A growth temperature dependence of the thickness of the terminal growth zone under the metal/semiconductor interface is introduced to modify our previous proposed phenomenological model to explain these observations. Tapering growth (the size of the NWs becomes narrower towards the top) was observed for the samples grown at 400 °C, which can be attributed to the diffusion-induced VLS mode that can be activated at relatively low growth temperature but inhibited at higher growth temperature. A cubic to hexagonal phase transformation was observed on the tapered NWs and its formation mechanism was proposed. © 2006 Elsevier B.V. All rights reserved.
Persistent Identifierhttp://hdl.handle.net/10722/171940
ISSN
2015 Impact Factor: 1.462
2015 SCImago Journal Rankings: 0.752
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorChan, SKen_US
dc.contributor.authorCai, Yen_US
dc.contributor.authorWang, Nen_US
dc.contributor.authorSou, IKen_US
dc.date.accessioned2012-10-30T06:18:38Z-
dc.date.available2012-10-30T06:18:38Z-
dc.date.issued2007en_US
dc.identifier.citationJournal Of Crystal Growth, 2007, v. 301-302 SPEC. ISS., p. 866-870en_US
dc.identifier.issn0022-0248en_US
dc.identifier.urihttp://hdl.handle.net/10722/171940-
dc.description.abstractThe growth orientation and crystalline perfection of ZnSe nanowires (NWs) grown by the combination of molecular beam epitaxy (MBE) and vapor-liquid-solid (VLS) reaction was found dependent on the growth temperature. Transmission electron microscopy (TEM) observations reveal that the preferred growth orientation of NWs depends on both the size of NWs and the growth temperature. A growth temperature dependence of the thickness of the terminal growth zone under the metal/semiconductor interface is introduced to modify our previous proposed phenomenological model to explain these observations. Tapering growth (the size of the NWs becomes narrower towards the top) was observed for the samples grown at 400 °C, which can be attributed to the diffusion-induced VLS mode that can be activated at relatively low growth temperature but inhibited at higher growth temperature. A cubic to hexagonal phase transformation was observed on the tapered NWs and its formation mechanism was proposed. © 2006 Elsevier B.V. All rights reserved.en_US
dc.languageengen_US
dc.publisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/jcrysgroen_US
dc.relation.ispartofJournal of Crystal Growthen_US
dc.subjectA1. Growth Modelsen_US
dc.subjectA2. Single-Crystal Growthen_US
dc.subjectB1. Nanomaterialsen_US
dc.subjectB2. Semiconducting Ii-Vi Materialsen_US
dc.titleGrowth temperature dependence of MBE-grown ZnSe Nanowiresen_US
dc.typeArticleen_US
dc.identifier.emailChan, SK:kwsherry@hku.hken_US
dc.identifier.authorityChan, SK=rp00539en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1016/j.jcrysgro.2006.11.091en_US
dc.identifier.scopuseid_2-s2.0-33947319823en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-33947319823&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume301-302en_US
dc.identifier.issueSPEC. ISS.en_US
dc.identifier.spage866en_US
dc.identifier.epage870en_US
dc.identifier.isiWOS:000246015800201-
dc.publisher.placeNetherlandsen_US
dc.identifier.scopusauthoridChan, SK=26424509100en_US
dc.identifier.scopusauthoridCai, Y=24823779900en_US
dc.identifier.scopusauthoridWang, N=7404340430en_US
dc.identifier.scopusauthoridSou, IK=7005758902en_US

Export via OAI-PMH Interface in XML Formats


OR


Export to Other Non-XML Formats