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Article: Te antisite incorporation in Zn S1-x Tex thin films

TitleTe antisite incorporation in Zn S1-x Tex thin films
Authors
Issue Date2005
PublisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/
Citation
Physical Review B - Condensed Matter And Materials Physics, 2005, v. 71 n. 19 How to Cite?
AbstractWe investigate Te-related intrinsic defects in Zn S1-x Tex thin films. First-principles calculations were performed for ZnS with Te as impurity atoms. The results show that the substitutional incorporation of Te in group VI sites cannot form defect states deep in the energy band gap of ZnS. On the other hand, our calculations on both Te antisite and interstitial defects result in deep-level states. X-ray photoelectron spectroscopy (XPS) and time-of-flight secondary ion mass spectrometry (TOF-SIMS) were used to study the chemical structures of three molecular-beam-epitaxy-grown Zn S1-x Tex samples, x {0.005,0.019,0.026}. An asymmetry was detected in the XPS spectra of both Te 3 d3 2 and Te 3 d5 2 core levels, which indicates that a small portion of the incorporated Te atoms is bonded to a more electronegative element. A peak at m z of 158 was detected in the SIMS depth profiles of these samples and its characteristics match that of TeS components of the lattice matrix. This experimental evidence strongly supports the existence of Te antisite defects in the thin films. We believe that the origin of the highly luminescent centers in Zn S1-x Tex thin films is possibly attributed to the deep-level states generated from Te anti-site incorporation. © 2005 The American Physical Society.
Persistent Identifierhttp://hdl.handle.net/10722/171933
ISSN
2014 Impact Factor: 3.736
2015 SCImago Journal Rankings: 1.933
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorChan, SKen_US
dc.contributor.authorLiu, HJen_US
dc.contributor.authorChan, CTen_US
dc.contributor.authorZhang, ZQen_US
dc.contributor.authorGe, WKen_US
dc.contributor.authorSou, IKen_US
dc.date.accessioned2012-10-30T06:18:35Z-
dc.date.available2012-10-30T06:18:35Z-
dc.date.issued2005en_US
dc.identifier.citationPhysical Review B - Condensed Matter And Materials Physics, 2005, v. 71 n. 19en_US
dc.identifier.issn1098-0121en_US
dc.identifier.urihttp://hdl.handle.net/10722/171933-
dc.description.abstractWe investigate Te-related intrinsic defects in Zn S1-x Tex thin films. First-principles calculations were performed for ZnS with Te as impurity atoms. The results show that the substitutional incorporation of Te in group VI sites cannot form defect states deep in the energy band gap of ZnS. On the other hand, our calculations on both Te antisite and interstitial defects result in deep-level states. X-ray photoelectron spectroscopy (XPS) and time-of-flight secondary ion mass spectrometry (TOF-SIMS) were used to study the chemical structures of three molecular-beam-epitaxy-grown Zn S1-x Tex samples, x {0.005,0.019,0.026}. An asymmetry was detected in the XPS spectra of both Te 3 d3 2 and Te 3 d5 2 core levels, which indicates that a small portion of the incorporated Te atoms is bonded to a more electronegative element. A peak at m z of 158 was detected in the SIMS depth profiles of these samples and its characteristics match that of TeS components of the lattice matrix. This experimental evidence strongly supports the existence of Te antisite defects in the thin films. We believe that the origin of the highly luminescent centers in Zn S1-x Tex thin films is possibly attributed to the deep-level states generated from Te anti-site incorporation. © 2005 The American Physical Society.en_US
dc.languageengen_US
dc.publisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/en_US
dc.relation.ispartofPhysical Review B - Condensed Matter and Materials Physicsen_US
dc.titleTe antisite incorporation in Zn S1-x Tex thin filmsen_US
dc.typeArticleen_US
dc.identifier.emailChan, SK:kwsherry@hku.hken_US
dc.identifier.authorityChan, SK=rp00539en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1103/PhysRevB.71.195421en_US
dc.identifier.scopuseid_2-s2.0-33344459129en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-33344459129&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume71en_US
dc.identifier.issue19en_US
dc.identifier.isiWOS:000230244100116-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridChan, SK=26424509100en_US
dc.identifier.scopusauthoridLiu, HJ=22634769500en_US
dc.identifier.scopusauthoridChan, CT=7404814650en_US
dc.identifier.scopusauthoridZhang, ZQ=9843096600en_US
dc.identifier.scopusauthoridGe, WK=7103160307en_US
dc.identifier.scopusauthoridSou, IK=7005758902en_US

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