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Article: Efficient second harmonic generation from large band gap II-VI semiconductor photonic crystal

TitleEfficient second harmonic generation from large band gap II-VI semiconductor photonic crystal
Authors
Issue Date2005
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2005, v. 87 n. 13, p. 1-3 How to Cite?
AbstractDramatic enhancement of second harmonic generation (SHG) near the photonic band edge was observed in a one-dimensional ZnSeZnMgS semiconductor photonic crystal (PC) structure. Over two orders of magnitude increase in SHG intensity was observed at the photonic band edge at ∼1400 nm compared to the nonphase matching region. The maximum SHG conversion efficiency of 0.8% is observed in only seven micrometers length of crystal. This enhancement came from a combination of large ZnSe second order susceptibility coefficient (χ(2)), high density of optical modes and phase matching of the fundamental and second harmonic waves near the photonic band edge due to modification of the dispersion curve by the PC structure. © 2005 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/171930
ISSN
2015 Impact Factor: 3.142
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorYang, Hen_US
dc.contributor.authorXie, Pen_US
dc.contributor.authorChan, SKen_US
dc.contributor.authorZhang, ZQen_US
dc.contributor.authorSou, IKen_US
dc.contributor.authorWong, GKLen_US
dc.contributor.authorWong, KSen_US
dc.date.accessioned2012-10-30T06:18:33Z-
dc.date.available2012-10-30T06:18:33Z-
dc.date.issued2005en_US
dc.identifier.citationApplied Physics Letters, 2005, v. 87 n. 13, p. 1-3en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://hdl.handle.net/10722/171930-
dc.description.abstractDramatic enhancement of second harmonic generation (SHG) near the photonic band edge was observed in a one-dimensional ZnSeZnMgS semiconductor photonic crystal (PC) structure. Over two orders of magnitude increase in SHG intensity was observed at the photonic band edge at ∼1400 nm compared to the nonphase matching region. The maximum SHG conversion efficiency of 0.8% is observed in only seven micrometers length of crystal. This enhancement came from a combination of large ZnSe second order susceptibility coefficient (χ(2)), high density of optical modes and phase matching of the fundamental and second harmonic waves near the photonic band edge due to modification of the dispersion curve by the PC structure. © 2005 American Institute of Physics.en_US
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_US
dc.relation.ispartofApplied Physics Lettersen_US
dc.titleEfficient second harmonic generation from large band gap II-VI semiconductor photonic crystalen_US
dc.typeArticleen_US
dc.identifier.emailChan, SK:kwsherry@hku.hken_US
dc.identifier.authorityChan, SK=rp00539en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1063/1.2061864en_US
dc.identifier.scopuseid_2-s2.0-28344450206en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-28344450206&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume87en_US
dc.identifier.issue13en_US
dc.identifier.spage1en_US
dc.identifier.epage3en_US
dc.identifier.isiWOS:000232060200006-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridYang, H=7406556890en_US
dc.identifier.scopusauthoridXie, P=7201549389en_US
dc.identifier.scopusauthoridChan, SK=26424509100en_US
dc.identifier.scopusauthoridZhang, ZQ=9843096600en_US
dc.identifier.scopusauthoridSou, IK=7005758902en_US
dc.identifier.scopusauthoridWong, GKL=7402527572en_US
dc.identifier.scopusauthoridWong, KS=13310164400en_US

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