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Article: SMD packaged ZnSSe ultra-violet schottky photodetectors with high detectivity

TitleSMD packaged ZnSSe ultra-violet schottky photodetectors with high detectivity
Authors
KeywordsDetectivity
Mbe
Noise Characteristics
Ultra-Violet Detectors
Znsse
Issue Date2005
Citation
Journal Of Optoelectronics And Advanced Materials, 2005, v. 7 n. 5, p. 2763-2768 How to Cite?
AbstractWe report the 1/f noise and shot noise studies on molecular beam epitaxy (MBE)-grown ZnSSe UV detectors packaged in SMD leadframes for three detectors with different thicknesses of the active layer and the top electrode pad. The highest onset of reverse bias for the appearance of 1/f noise is -27.5V and the highest dark resistances at zero bias is R 0 = 3.7 × 10 13Ω. The observed difference in their noise performance implies that the increase of the thicknesses of both the active layer and the top electrode pad can significantly lower the noise levels and in turn lead to higher detectivity. The best detectivity achieved is 8.75×10 13 cmHz 1/2W -1 in a detector with an active layer of 5000 Å and a top electrode pad of Cr (50Å) / Au (8000Å).
Persistent Identifierhttp://hdl.handle.net/10722/171929
ISSN
2015 Impact Factor: 0.383
2015 SCImago Journal Rankings: 0.197
References

 

DC FieldValueLanguage
dc.contributor.authorMak, LSen_US
dc.contributor.authorChan, SKen_US
dc.contributor.authorWong, GKLen_US
dc.contributor.authorSou, IKen_US
dc.date.accessioned2012-10-30T06:18:32Z-
dc.date.available2012-10-30T06:18:32Z-
dc.date.issued2005en_US
dc.identifier.citationJournal Of Optoelectronics And Advanced Materials, 2005, v. 7 n. 5, p. 2763-2768en_US
dc.identifier.issn1454-4164en_US
dc.identifier.urihttp://hdl.handle.net/10722/171929-
dc.description.abstractWe report the 1/f noise and shot noise studies on molecular beam epitaxy (MBE)-grown ZnSSe UV detectors packaged in SMD leadframes for three detectors with different thicknesses of the active layer and the top electrode pad. The highest onset of reverse bias for the appearance of 1/f noise is -27.5V and the highest dark resistances at zero bias is R 0 = 3.7 × 10 13Ω. The observed difference in their noise performance implies that the increase of the thicknesses of both the active layer and the top electrode pad can significantly lower the noise levels and in turn lead to higher detectivity. The best detectivity achieved is 8.75×10 13 cmHz 1/2W -1 in a detector with an active layer of 5000 Å and a top electrode pad of Cr (50Å) / Au (8000Å).en_US
dc.languageengen_US
dc.relation.ispartofJournal of Optoelectronics and Advanced Materialsen_US
dc.subjectDetectivityen_US
dc.subjectMbeen_US
dc.subjectNoise Characteristicsen_US
dc.subjectUltra-Violet Detectorsen_US
dc.subjectZnsseen_US
dc.titleSMD packaged ZnSSe ultra-violet schottky photodetectors with high detectivityen_US
dc.typeArticleen_US
dc.identifier.emailChan, SK:kwsherry@hku.hken_US
dc.identifier.authorityChan, SK=rp00539en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-27844537821en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-27844537821&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume7en_US
dc.identifier.issue5en_US
dc.identifier.spage2763en_US
dc.identifier.epage2768en_US
dc.identifier.scopusauthoridMak, LS=7004431383en_US
dc.identifier.scopusauthoridChan, SK=26424509100en_US
dc.identifier.scopusauthoridWong, GKL=7402527572en_US
dc.identifier.scopusauthoridSou, IK=7005758902en_US

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