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Article: Single-molecule transistor fabrication by self-aligned lithography and in situ molecular assembly

TitleSingle-molecule transistor fabrication by self-aligned lithography and in situ molecular assembly
Authors
Tang, JDe Poortere, EPKlare, JENuckolls, CWind, SJ
KeywordsMolecular Electronics
Molecular Self-Assembly
Nanolithography
Issue Date2006
PublisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/mee
Citation
Microelectronic Engineering, 2006, v. 83 n. 4-9 SPEC. ISS., p. 1706-1709 How to Cite?
DOI: http://dx.doi.org/10.1016/j.mee.2006.01.165
AbstractWe describe the fabrication of single-molecule transistors by self-aligned lithography and in situ molecular assembly. Ultrathin metallic electrodes are patterned with a nanoscale interelectrode separation defined by the lateral oxidation of a thin layer of Al. Highly conjugated molecular units are sequentially assembled within the electrode gap by selective design of the molecular end group chemistry. The assembled devices display evidence of molecular conduction. © 2006 Elsevier B.V. All rights reserved.
Persistent Identifierhttp://hdl.handle.net/10722/169598
ISSN
0167-9317
2021 Impact Factor: 2.662
2020 SCImago Journal Rankings: 0.553
ISI Accession Number ID
WOS:000237581900262
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorTang, Jen_US
dc.contributor.authorDe Poortere, EPen_US
dc.contributor.authorKlare, JEen_US
dc.contributor.authorNuckolls, Cen_US
dc.contributor.authorWind, SJen_US
dc.date.accessioned2012-10-25T04:53:32Z-
dc.date.available2012-10-25T04:53:32Z-
dc.date.issued2006en_US
dc.identifier.citationMicroelectronic Engineering, 2006, v. 83 n. 4-9 SPEC. ISS., p. 1706-1709en_US
dc.identifier.issn0167-9317en_US
dc.identifier.urihttp://hdl.handle.net/10722/169598-
dc.description.abstractWe describe the fabrication of single-molecule transistors by self-aligned lithography and in situ molecular assembly. Ultrathin metallic electrodes are patterned with a nanoscale interelectrode separation defined by the lateral oxidation of a thin layer of Al. Highly conjugated molecular units are sequentially assembled within the electrode gap by selective design of the molecular end group chemistry. The assembled devices display evidence of molecular conduction. © 2006 Elsevier B.V. All rights reserved.en_US
dc.languageengen_US
dc.publisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/meeen_US
dc.relation.ispartofMicroelectronic Engineeringen_US
dc.subjectMolecular Electronicsen_US
dc.subjectMolecular Self-Assemblyen_US
dc.subjectNanolithographyen_US
dc.titleSingle-molecule transistor fabrication by self-aligned lithography and in situ molecular assemblyen_US
dc.typeArticleen_US
dc.identifier.emailTang, J: jinyao@hku.hken_US
dc.identifier.authorityTang, J=rp01677en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1016/j.mee.2006.01.165en_US
dc.identifier.scopuseid_2-s2.0-33646073439en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-33646073439&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume83en_US
dc.identifier.issue4-9 SPEC. ISS.en_US
dc.identifier.spage1706en_US
dc.identifier.epage1709en_US
dc.identifier.isiWOS:000237581900262-
dc.publisher.placeNetherlandsen_US
dc.identifier.scopusauthoridTang, J=12791614900en_US
dc.identifier.scopusauthoridDe Poortere, EP=7003621914en_US
dc.identifier.scopusauthoridKlare, JE=6603098505en_US
dc.identifier.scopusauthoridNuckolls, C=7003418403en_US
dc.identifier.scopusauthoridWind, SJ=7003310692en_US
dc.identifier.issnl0167-9317-

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