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Article: Conduction mechanisms at low- and high-resistance states in aluminum/anodic aluminum oxide/aluminum thin film structure

TitleConduction mechanisms at low- and high-resistance states in aluminum/anodic aluminum oxide/aluminum thin film structure
Authors
KeywordsAl oxide
Aluminum oxides
Conduction mechanism
Electron hopping
High field
Issue Date2012
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal of Applied Physics, 2012, v. 112 n. 6, article no. 063706 How to Cite?
Abstract
In this work, conduction mechanisms of Al/anodic Al oxide/ Al structure, which exhibits resistive switching behavior, have been investigated. The low-resistance state shows ohmic conduction with a metal-like behavior similar to that of pure aluminum. The situation can be explained by the existence of the metallic filament formed by the excess Al in the Al oxide. On the other hand, the high-resistance state (HRS) shows two distinct regimes: ohmic conduction at low fields with a semiconductor-like behavior; and a non-ohmic conduction at high fields. The ohmic conduction of HRS at low fields is attributed to the electron hopping between the states in the oxide with the activation energy of ∼0.23 eV. It is suggested that the conduction of HRS at high fields (the maximum voltage is lower than the set voltage) is due to the field-enhanced thermal excitation of the electrons trapped in the states of the metallic Al nano-phase into the conduction band of the Al oxide or the electron emission from the potential well of the metallic Al nano-phase to the conduction band. © 2012 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/169261
ISSN
2013 Impact Factor: 2.185
ISI Accession Number ID
References

 

Author Affiliations
  1. The University of Hong Kong
  2. University of Electronic Science and Technology of China
  3. Nanyang Technological University
DC FieldValueLanguage
dc.contributor.authorZhu, Wen_US
dc.contributor.authorChen, TPen_US
dc.contributor.authorLiu, Yen_US
dc.contributor.authorFung, SHYen_US
dc.date.accessioned2012-10-18T08:47:47Z-
dc.date.available2012-10-18T08:47:47Z-
dc.date.issued2012en_US
dc.identifier.citationJournal of Applied Physics, 2012, v. 112 n. 6, article no. 063706en_US
dc.identifier.issn0021-8979-
dc.identifier.urihttp://hdl.handle.net/10722/169261-
dc.description.abstractIn this work, conduction mechanisms of Al/anodic Al oxide/ Al structure, which exhibits resistive switching behavior, have been investigated. The low-resistance state shows ohmic conduction with a metal-like behavior similar to that of pure aluminum. The situation can be explained by the existence of the metallic filament formed by the excess Al in the Al oxide. On the other hand, the high-resistance state (HRS) shows two distinct regimes: ohmic conduction at low fields with a semiconductor-like behavior; and a non-ohmic conduction at high fields. The ohmic conduction of HRS at low fields is attributed to the electron hopping between the states in the oxide with the activation energy of ∼0.23 eV. It is suggested that the conduction of HRS at high fields (the maximum voltage is lower than the set voltage) is due to the field-enhanced thermal excitation of the electrons trapped in the states of the metallic Al nano-phase into the conduction band of the Al oxide or the electron emission from the potential well of the metallic Al nano-phase to the conduction band. © 2012 American Institute of Physics.-
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_US
dc.relation.ispartofJournal of Applied Physicsen_US
dc.rightsCreative Commons: Attribution 3.0 Hong Kong Licenseen_US
dc.rightsCopyright (2012) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in (Journal of Applied Physics, 2012, v. 112 n. 6, article no. 063706) and may be found at (http://jap.aip.org/resource/1/japiau/v112/i6/p063706_s1).en_US
dc.subjectAl oxide-
dc.subjectAluminum oxides-
dc.subjectConduction mechanism-
dc.subjectElectron hopping-
dc.subjectHigh field-
dc.titleConduction mechanisms at low- and high-resistance states in aluminum/anodic aluminum oxide/aluminum thin film structureen_US
dc.typeArticleen_US
dc.identifier.emailChen, TP: echentp@ntu.edu.sgen_US
dc.identifier.emailFung, SHY: sfung@hku.hk-
dc.identifier.authorityFung, SHY=rp00695en_US
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1063/1.4754011-
dc.identifier.scopuseid_2-s2.0-84867081673-
dc.identifier.hkuros212064en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-84867081673&selection=ref&src=s&origin=recordpage-
dc.identifier.volume112en_US
dc.identifier.issue6, article no. 063706-
dc.identifier.isiWOS:000309423200060-
dc.publisher.placeUnited States-
dc.identifier.scopusauthoridZhu, W=7404232937-
dc.identifier.scopusauthoridChen, TP=7405540443-
dc.identifier.scopusauthoridLiu, Y=36063269800-
dc.identifier.scopusauthoridFung, S=7201970040-

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