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Article: Conduction mechanisms at low- and high-resistance states in aluminum/anodic aluminum oxide/aluminum thin film structure
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TitleConduction mechanisms at low- and high-resistance states in aluminum/anodic aluminum oxide/aluminum thin film structure
 
AuthorsZhu, W3
Chen, TP3
Liu, Y2
Fung, SHY1
 
KeywordsAl oxide
Aluminum oxides
Conduction mechanism
Electron hopping
High field
 
Issue Date2012
 
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
 
CitationJournal of Applied Physics, 2012, v. 112 n. 6, article no. 063706 [How to Cite?]
DOI: http://dx.doi.org/10.1063/1.4754011
 
AbstractIn this work, conduction mechanisms of Al/anodic Al oxide/ Al structure, which exhibits resistive switching behavior, have been investigated. The low-resistance state shows ohmic conduction with a metal-like behavior similar to that of pure aluminum. The situation can be explained by the existence of the metallic filament formed by the excess Al in the Al oxide. On the other hand, the high-resistance state (HRS) shows two distinct regimes: ohmic conduction at low fields with a semiconductor-like behavior; and a non-ohmic conduction at high fields. The ohmic conduction of HRS at low fields is attributed to the electron hopping between the states in the oxide with the activation energy of ∼0.23 eV. It is suggested that the conduction of HRS at high fields (the maximum voltage is lower than the set voltage) is due to the field-enhanced thermal excitation of the electrons trapped in the states of the metallic Al nano-phase into the conduction band of the Al oxide or the electron emission from the potential well of the metallic Al nano-phase to the conduction band. © 2012 American Institute of Physics.
 
ISSN0021-8979
2013 Impact Factor: 2.185
 
DOIhttp://dx.doi.org/10.1063/1.4754011
 
ISI Accession Number IDWOS:000309423200060
 
ReferencesReferences in Scopus
 
DC FieldValue
dc.contributor.authorZhu, W
 
dc.contributor.authorChen, TP
 
dc.contributor.authorLiu, Y
 
dc.contributor.authorFung, SHY
 
dc.date.accessioned2012-10-18T08:47:47Z
 
dc.date.available2012-10-18T08:47:47Z
 
dc.date.issued2012
 
dc.description.abstractIn this work, conduction mechanisms of Al/anodic Al oxide/ Al structure, which exhibits resistive switching behavior, have been investigated. The low-resistance state shows ohmic conduction with a metal-like behavior similar to that of pure aluminum. The situation can be explained by the existence of the metallic filament formed by the excess Al in the Al oxide. On the other hand, the high-resistance state (HRS) shows two distinct regimes: ohmic conduction at low fields with a semiconductor-like behavior; and a non-ohmic conduction at high fields. The ohmic conduction of HRS at low fields is attributed to the electron hopping between the states in the oxide with the activation energy of ∼0.23 eV. It is suggested that the conduction of HRS at high fields (the maximum voltage is lower than the set voltage) is due to the field-enhanced thermal excitation of the electrons trapped in the states of the metallic Al nano-phase into the conduction band of the Al oxide or the electron emission from the potential well of the metallic Al nano-phase to the conduction band. © 2012 American Institute of Physics.
 
dc.description.naturepublished_or_final_version
 
dc.identifier.citationJournal of Applied Physics, 2012, v. 112 n. 6, article no. 063706 [How to Cite?]
DOI: http://dx.doi.org/10.1063/1.4754011
 
dc.identifier.doihttp://dx.doi.org/10.1063/1.4754011
 
dc.identifier.hkuros212064
 
dc.identifier.isiWOS:000309423200060
 
dc.identifier.issn0021-8979
2013 Impact Factor: 2.185
 
dc.identifier.issue6, article no. 063706
 
dc.identifier.scopuseid_2-s2.0-84867081673
 
dc.identifier.urihttp://hdl.handle.net/10722/169261
 
dc.identifier.volume112
 
dc.languageeng
 
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
 
dc.publisher.placeUnited States
 
dc.relation.ispartofJournal of Applied Physics
 
dc.relation.referencesReferences in Scopus
 
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License
 
dc.rightsCopyright (2012) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in (Journal of Applied Physics, 2012, v. 112 n. 6, article no. 063706) and may be found at (http://jap.aip.org/resource/1/japiau/v112/i6/p063706_s1).
 
dc.subjectAl oxide
 
dc.subjectAluminum oxides
 
dc.subjectConduction mechanism
 
dc.subjectElectron hopping
 
dc.subjectHigh field
 
dc.titleConduction mechanisms at low- and high-resistance states in aluminum/anodic aluminum oxide/aluminum thin film structure
 
dc.typeArticle
 
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<contributor.author>Chen, TP</contributor.author>
<contributor.author>Liu, Y</contributor.author>
<contributor.author>Fung, SHY</contributor.author>
<date.accessioned>2012-10-18T08:47:47Z</date.accessioned>
<date.available>2012-10-18T08:47:47Z</date.available>
<date.issued>2012</date.issued>
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<description.abstract>In this work, conduction mechanisms of Al/anodic Al oxide/ Al structure, which exhibits resistive switching behavior, have been investigated. The low-resistance state shows ohmic conduction with a metal-like behavior similar to that of pure aluminum. The situation can be explained by the existence of the metallic filament formed by the excess Al in the Al oxide. On the other hand, the high-resistance state (HRS) shows two distinct regimes: ohmic conduction at low fields with a semiconductor-like behavior; and a non-ohmic conduction at high fields. The ohmic conduction of HRS at low fields is attributed to the electron hopping between the states in the oxide with the activation energy of &#8764;0.23 eV. It is suggested that the conduction of HRS at high fields (the maximum voltage is lower than the set voltage) is due to the field-enhanced thermal excitation of the electrons trapped in the states of the metallic Al nano-phase into the conduction band of the Al oxide or the electron emission from the potential well of the metallic Al nano-phase to the conduction band. &#169; 2012 American Institute of Physics.</description.abstract>
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<subject>Al oxide</subject>
<subject>Aluminum oxides</subject>
<subject>Conduction mechanism</subject>
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Author Affiliations
  1. The University of Hong Kong
  2. University of Electronic Science and Technology of China
  3. Nanyang Technological University