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Article: Resistive Switching Behavior of Partially Anodized Aluminum Thin Film at Elevated Temperatures
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TitleResistive Switching Behavior of Partially Anodized Aluminum Thin Film at Elevated Temperatures
 
AuthorsZhu, W3
Chen, TP3
Yang, M3
Liu, Y2
Fung, SHY1
 
Issue Date2012
 
CitationIEEE Transactions on Electron Devices, 2012, v. 59, p. 2363-2367 [How to Cite?]
DOI: http://dx.doi.org/10.1109/TED.2012.2205692
 
DOIhttp://dx.doi.org/10.1109/TED.2012.2205692
 
ISI Accession Number IDWOS:000307905200014
 
DC FieldValue
dc.contributor.authorZhu, W
 
dc.contributor.authorChen, TP
 
dc.contributor.authorYang, M
 
dc.contributor.authorLiu, Y
 
dc.contributor.authorFung, SHY
 
dc.date.accessioned2012-10-18T08:47:46Z
 
dc.date.available2012-10-18T08:47:46Z
 
dc.date.issued2012
 
dc.description.naturepublished_or_final_version
 
dc.identifier.citationIEEE Transactions on Electron Devices, 2012, v. 59, p. 2363-2367 [How to Cite?]
DOI: http://dx.doi.org/10.1109/TED.2012.2205692
 
dc.identifier.doihttp://dx.doi.org/10.1109/TED.2012.2205692
 
dc.identifier.epage2367
 
dc.identifier.hkuros212058
 
dc.identifier.isiWOS:000307905200014
 
dc.identifier.scopuseid_2-s2.0-84865520167
 
dc.identifier.spage2363
 
dc.identifier.urihttp://hdl.handle.net/10722/169260
 
dc.identifier.volume59
 
dc.languageeng
 
dc.relation.ispartofIEEE Transactions on Electron Devices
 
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License
 
dc.titleResistive Switching Behavior of Partially Anodized Aluminum Thin Film at Elevated Temperatures
 
dc.typeArticle
 
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Author Affiliations
  1. The University of Hong Kong
  2. University of Electronic Science and Technology of China
  3. Nanyang Technological University