Article: Resistive Switching Behavior of Partially Anodized Aluminum Thin Film at Elevated Temperatures

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Publisher Website: 10.1109/TED.2012.2205692
Scopus: eid_2-s2.0-84865520167

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Title	Resistive Switching Behavior of Partially Anodized Aluminum Thin Film at Elevated Temperatures
Authors	Zhu, W3 Chen, TP3 Yang, M3 Liu, Y2 Fung, SHY1
Issue Date	2012
Citation	IEEE Transactions on Electron Devices, 2012, v. 59, p. 2363-2367 [How to Cite?] DOI: http://dx.doi.org/10.1109/TED.2012.2205692
DOI	http://dx.doi.org/10.1109/TED.2012.2205692

DC Field	Value
dc.contributor.author	Zhu, W
dc.contributor.author	Chen, TP
dc.contributor.author	Yang, M
dc.contributor.author	Liu, Y
dc.contributor.author	Fung, SHY
dc.date.accessioned	2012-10-18T08:47:46Z
dc.date.available	2012-10-18T08:47:46Z
dc.date.issued	2012
dc.description.nature	published_or_final_version
dc.identifier.citation	IEEE Transactions on Electron Devices, 2012, v. 59, p. 2363-2367 [How to Cite?] DOI: http://dx.doi.org/10.1109/TED.2012.2205692
dc.identifier.doi	http://dx.doi.org/10.1109/TED.2012.2205692
dc.identifier.epage	2367
dc.identifier.hkuros	212058
dc.identifier.scopus	eid_2-s2.0-84865520167
dc.identifier.spage	2363
dc.identifier.uri	http://hdl.handle.net/10722/169260
dc.identifier.volume	59
dc.language	eng
dc.relation.ispartof	IEEE Transactions on Electron Devices
dc.rights	Creative Commons: Attribution 3.0 Hong Kong License
dc.title	Resistive Switching Behavior of Partially Anodized Aluminum Thin Film at Elevated Temperatures
dc.type	Article

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Author Affiliations

The University of Hong Kong
University of Electronic Science and Technology of China
Nanyang Technological University