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Conference Paper: Efficient bulk heterojunction photovoltaic cells using sublimable transition metal complex as photosensitizers

TitleEfficient bulk heterojunction photovoltaic cells using sublimable transition metal complex as photosensitizers
Authors
Issue Date2005
PublisherMaterials Research Society. The Journal's web site is located at http://www.mrs.org/publications/epubs/proceedings/spring2004/index.html
Citation
Materials Research Society Symposium Proceedings, 2005, v. 836, p. 149-154 How to Cite?
Abstract
Multilayer bulk heterojunction photovoltaic cells using chlorotricarbonyl rhenium (I) bis(phenylimino)acenaphthene (Re-DIAN) complex as photosensitizer were studied. The complex is sublimable, has lower band gap, good thermal stability and good processibility. It has broad absorption in UV-visible region. Therefore, Re-DIAN exhibits good photosensitising property for photovoltaic cells. Multilayer bulk heterojunction photovoltaic cells with simple structures were fabricated base on Re-DIAN complex. The active layer consists of a blend of Re-DIAN and fullerene that were co-deposited in the same layer by vacuum deposition. The photovoltaic properties of the devices were studied by irradiaton under AM 1.5 simulated solar light. The effects of changing the co-deposition film thickness, amount of Re-DIAN photosensitizer, and hole transporting materials were studied. © 2005 Materials Research Society.
Persistent Identifierhttp://hdl.handle.net/10722/168828
ISSN
2013 SCImago Journal Rankings: 0.128
References

 

Author Affiliations
  1. The University of Hong Kong
DC FieldValueLanguage
dc.contributor.authorWong, HLen_HK
dc.contributor.authorMan, KKYen_HK
dc.contributor.authorChan, WKen_HK
dc.contributor.authorKwong, CYen_HK
dc.contributor.authorDjurišić, ABen_HK
dc.date.accessioned2012-10-08T03:34:44Z-
dc.date.available2012-10-08T03:34:44Z-
dc.date.issued2005en_HK
dc.identifier.citationMaterials Research Society Symposium Proceedings, 2005, v. 836, p. 149-154en_US
dc.identifier.issn0272-9172en_HK
dc.identifier.urihttp://hdl.handle.net/10722/168828-
dc.description.abstractMultilayer bulk heterojunction photovoltaic cells using chlorotricarbonyl rhenium (I) bis(phenylimino)acenaphthene (Re-DIAN) complex as photosensitizer were studied. The complex is sublimable, has lower band gap, good thermal stability and good processibility. It has broad absorption in UV-visible region. Therefore, Re-DIAN exhibits good photosensitising property for photovoltaic cells. Multilayer bulk heterojunction photovoltaic cells with simple structures were fabricated base on Re-DIAN complex. The active layer consists of a blend of Re-DIAN and fullerene that were co-deposited in the same layer by vacuum deposition. The photovoltaic properties of the devices were studied by irradiaton under AM 1.5 simulated solar light. The effects of changing the co-deposition film thickness, amount of Re-DIAN photosensitizer, and hole transporting materials were studied. © 2005 Materials Research Society.en_HK
dc.languageengen_US
dc.publisherMaterials Research Society. The Journal's web site is located at http://www.mrs.org/publications/epubs/proceedings/spring2004/index.htmlen_HK
dc.relation.ispartofMaterials Research Society Symposium Proceedingsen_HK
dc.titleEfficient bulk heterojunction photovoltaic cells using sublimable transition metal complex as photosensitizersen_HK
dc.typeConference_Paperen_HK
dc.identifier.emailChan, WK: waichan@hku.hken_HK
dc.identifier.emailDjurišić, AB: dalek@hku.hken_HK
dc.identifier.authorityChan, WK=rp00667en_HK
dc.identifier.authorityDjurišić, AB=rp00690en_HK
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-28844434164en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-28844434164&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume836en_HK
dc.identifier.spage149en_HK
dc.identifier.epage154en_HK
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridWong, HL=36920239500en_HK
dc.identifier.scopusauthoridMan, KKY=8051698900en_HK
dc.identifier.scopusauthoridChan, WK=13310083000en_HK
dc.identifier.scopusauthoridKwong, CY=35917741900en_HK
dc.identifier.scopusauthoridDjurišić, AB=7004904830en_HK

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