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Article: Theoretical prediction of topological insulators in thallium-based III-V-VI2 ternary chalcogenides
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TitleTheoretical prediction of topological insulators in thallium-based III-V-VI2 ternary chalcogenides
 
AuthorsYan, B2
Liu, CX4
Zhang, HJ1 3
Yam, CY2
Qi, XL5 3
Frauenheim, T2
Zhang, SC3
 
Issue Date2010
 
PublisherInstitute of Physics Publishing Ltd.. The Journal's web site is located at http://iopscience.iop.org/0295-5075
 
CitationEpl, 2010, v. 90 n. 3 [How to Cite?]
DOI: http://dx.doi.org/10.1209/0295-5075/90/37002
 
AbstractWe predict a new class of three-dimensional topological insulators in thallium-based III-V-VI2 ternary chalcogenides, including TlBiQ 2 and TlSbQ2 (Q=Te, Se and S). These topological insulators have robust and simple surface states consisting of a single Dirac cone at the Γ point. The mechanism for topological insulating behavior is elucidated using both first-principle calculations and effective field theory models. Remarkably, one topological insulator in this class, TlBiTe2, is also a superconductor when doped with p-type carriers. We discuss the possibility that this material could be a topological superconductor. Another material, TlSbS2, is on the border between topological insulator and trivial insulator phases, in which a topological phase transition can be driven by pressure. © 2010 EPLA.
 
ISSN0295-5075
2013 Impact Factor: 2.269
 
DOIhttp://dx.doi.org/10.1209/0295-5075/90/37002
 
ReferencesReferences in Scopus
 
DC FieldValue
dc.contributor.authorYan, B
 
dc.contributor.authorLiu, CX
 
dc.contributor.authorZhang, HJ
 
dc.contributor.authorYam, CY
 
dc.contributor.authorQi, XL
 
dc.contributor.authorFrauenheim, T
 
dc.contributor.authorZhang, SC
 
dc.date.accessioned2012-10-08T03:19:26Z
 
dc.date.available2012-10-08T03:19:26Z
 
dc.date.issued2010
 
dc.description.abstractWe predict a new class of three-dimensional topological insulators in thallium-based III-V-VI2 ternary chalcogenides, including TlBiQ 2 and TlSbQ2 (Q=Te, Se and S). These topological insulators have robust and simple surface states consisting of a single Dirac cone at the Γ point. The mechanism for topological insulating behavior is elucidated using both first-principle calculations and effective field theory models. Remarkably, one topological insulator in this class, TlBiTe2, is also a superconductor when doped with p-type carriers. We discuss the possibility that this material could be a topological superconductor. Another material, TlSbS2, is on the border between topological insulator and trivial insulator phases, in which a topological phase transition can be driven by pressure. © 2010 EPLA.
 
dc.description.natureLink_to_subscribed_fulltext
 
dc.identifier.citationEpl, 2010, v. 90 n. 3 [How to Cite?]
DOI: http://dx.doi.org/10.1209/0295-5075/90/37002
 
dc.identifier.doihttp://dx.doi.org/10.1209/0295-5075/90/37002
 
dc.identifier.issn0295-5075
2013 Impact Factor: 2.269
 
dc.identifier.issue3
 
dc.identifier.scopuseid_2-s2.0-77957744543
 
dc.identifier.urihttp://hdl.handle.net/10722/168478
 
dc.identifier.volume90
 
dc.languageeng
 
dc.publisherInstitute of Physics Publishing Ltd.. The Journal's web site is located at http://iopscience.iop.org/0295-5075
 
dc.publisher.placeUnited Kingdom
 
dc.relation.ispartofEPL
 
dc.relation.referencesReferences in Scopus
 
dc.titleTheoretical prediction of topological insulators in thallium-based III-V-VI2 ternary chalcogenides
 
dc.typeArticle
 
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Author Affiliations
  1. Institute of Physics Chinese Academy of Sciences
  2. Universität Bremen
  3. Stanford University
  4. Julius-Maximilians-Universität Würzburg
  5. University of California, Santa Barbara