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Article: Interfaces between 8-hydroxyquinoline aluminium and cesium as affected by their deposition sequences

TitleInterfaces between 8-hydroxyquinoline aluminium and cesium as affected by their deposition sequences
Authors
Issue Date2003
PublisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/cplett
Citation
Chemical Physics Letters, 2003, v. 367 n. 5-6, p. 753-758 How to Cite?
AbstractThe electronic structures of tris(8-hydroxyquinoline) aluminum (Alq3) deposited on clean or Cs pre-covered Ag substrates have been studied by ultraviolet photoelectron spectroscopy. Interface of Cs deposited on Alq 3 has also been prepared for comparison. For a low coverage of Cs on Ag, deposition of Alq 3 on top of the Cs cannot induce any new electronic features. The low work function of the Cs reduces the barrier height of electron injection at the Alq 3=Cs=Ag contact to 0.3 eV, as compared to 1.6 eV for the Alq 3/Ag contact. For high Cs coverage, the Cs may diffuse as neutral atoms and undergo oxidation into the Alq 3 layer and form a new gap state at 0.9 eV above the Alq 3 highest occupied state, which is the same as that of Cs deposited on the Alq 3. © 2002 Published by Elsevier Science B.V.
Persistent Identifierhttp://hdl.handle.net/10722/167778
ISSN
2015 Impact Factor: 1.86
2015 SCImago Journal Rankings: 0.757
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorLai, SLen_US
dc.contributor.authorFung, MKen_US
dc.contributor.authorBao, SNen_US
dc.contributor.authorTong, SWen_US
dc.contributor.authorChan, MYen_US
dc.contributor.authorLee, CSen_US
dc.contributor.authorLee, STen_US
dc.date.accessioned2012-10-08T03:11:26Z-
dc.date.available2012-10-08T03:11:26Z-
dc.date.issued2003en_US
dc.identifier.citationChemical Physics Letters, 2003, v. 367 n. 5-6, p. 753-758en_US
dc.identifier.issn0009-2614en_US
dc.identifier.urihttp://hdl.handle.net/10722/167778-
dc.description.abstractThe electronic structures of tris(8-hydroxyquinoline) aluminum (Alq3) deposited on clean or Cs pre-covered Ag substrates have been studied by ultraviolet photoelectron spectroscopy. Interface of Cs deposited on Alq 3 has also been prepared for comparison. For a low coverage of Cs on Ag, deposition of Alq 3 on top of the Cs cannot induce any new electronic features. The low work function of the Cs reduces the barrier height of electron injection at the Alq 3=Cs=Ag contact to 0.3 eV, as compared to 1.6 eV for the Alq 3/Ag contact. For high Cs coverage, the Cs may diffuse as neutral atoms and undergo oxidation into the Alq 3 layer and form a new gap state at 0.9 eV above the Alq 3 highest occupied state, which is the same as that of Cs deposited on the Alq 3. © 2002 Published by Elsevier Science B.V.en_US
dc.languageengen_US
dc.publisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/cpletten_US
dc.relation.ispartofChemical Physics Lettersen_US
dc.titleInterfaces between 8-hydroxyquinoline aluminium and cesium as affected by their deposition sequencesen_US
dc.typeArticleen_US
dc.identifier.emailChan, MY:chanmym@hku.hken_US
dc.identifier.authorityChan, MY=rp00666en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1016/S0009-2614(02)01790-6en_US
dc.identifier.scopuseid_2-s2.0-0037427660en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0037427660&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume367en_US
dc.identifier.issue5-6en_US
dc.identifier.spage753en_US
dc.identifier.epage758en_US
dc.identifier.isiWOS:000180359100037-
dc.publisher.placeNetherlandsen_US
dc.identifier.scopusauthoridLai, SL=7402937153en_US
dc.identifier.scopusauthoridFung, MK=7101955091en_US
dc.identifier.scopusauthoridBao, SN=7201558753en_US
dc.identifier.scopusauthoridTong, SW=36891091800en_US
dc.identifier.scopusauthoridChan, MY=7402597725en_US
dc.identifier.scopusauthoridLee, CS=35364273600en_US
dc.identifier.scopusauthoridLee, ST=7601407495en_US

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