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Article: Conduction band offset of InGaN/AlInGaN quantum wells studied by deep level transient spectroscopic technique
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TitleConduction band offset of InGaN/AlInGaN quantum wells studied by deep level transient spectroscopic technique
 
AuthorsLu, L2 3
Su, S2 1
Ling, CC2
Xu, S2
Zhao, D3
Zhu, J3
Yang, H3
Wang, J4
Ge, W5 4
 
Issue Date2012
 
PublisherThe Japan Society of Applied Physics.
 
CitationApplied Physics Express, 2012, v. 5 n. 9 [How to Cite?]
DOI: http://dx.doi.org/10.1143/APEX.5.091001
 
AbstractThe heterostructure conduction band offset ΔE c in In 0.08Ga 0.92N/Al 0.075In 0.045Ga 0.88N quantum wells (QWs) was characterized by capacitance-voltage (C-V) and deep-level transient spectroscopy (DLTS) measurements made on the QWs, which acted as the light-emitting active layer of GaN p-n light-emitting diodes (LEDs). The thermal emission energy of the In 0.08Ga 0.92N wells was found to be 0.21 ± 0.01 eV. This corresponds to a conduction band offset of about 0.25 ± 0.02 eV. © 2012 The Japan Society of Applied Physics.
 
DescriptionOpen Access Journal
 
ISSN1882-0778
2013 Impact Factor: 2.567
2013 SCImago Journal Rankings: 0.958
 
DOIhttp://dx.doi.org/10.1143/APEX.5.091001
 
ReferencesReferences in Scopus
 
DC FieldValue
dc.contributor.authorLu, L
 
dc.contributor.authorSu, S
 
dc.contributor.authorLing, CC
 
dc.contributor.authorXu, S
 
dc.contributor.authorZhao, D
 
dc.contributor.authorZhu, J
 
dc.contributor.authorYang, H
 
dc.contributor.authorWang, J
 
dc.contributor.authorGe, W
 
dc.date.accessioned2012-09-20T08:04:53Z
 
dc.date.available2012-09-20T08:04:53Z
 
dc.date.issued2012
 
dc.description.abstractThe heterostructure conduction band offset ΔE c in In 0.08Ga 0.92N/Al 0.075In 0.045Ga 0.88N quantum wells (QWs) was characterized by capacitance-voltage (C-V) and deep-level transient spectroscopy (DLTS) measurements made on the QWs, which acted as the light-emitting active layer of GaN p-n light-emitting diodes (LEDs). The thermal emission energy of the In 0.08Ga 0.92N wells was found to be 0.21 ± 0.01 eV. This corresponds to a conduction band offset of about 0.25 ± 0.02 eV. © 2012 The Japan Society of Applied Physics.
 
dc.description.naturelink_to_OA_fulltext
 
dc.descriptionOpen Access Journal
 
dc.identifier.citationApplied Physics Express, 2012, v. 5 n. 9 [How to Cite?]
DOI: http://dx.doi.org/10.1143/APEX.5.091001
 
dc.identifier.doihttp://dx.doi.org/10.1143/APEX.5.091001
 
dc.identifier.epage3
 
dc.identifier.hkuros209217
 
dc.identifier.issn1882-0778
2013 Impact Factor: 2.567
2013 SCImago Journal Rankings: 0.958
 
dc.identifier.issue9
 
dc.identifier.scopuseid_2-s2.0-84866404150
 
dc.identifier.spage091001:1
 
dc.identifier.urihttp://hdl.handle.net/10722/164514
 
dc.identifier.volume5
 
dc.languageeng
 
dc.publisherThe Japan Society of Applied Physics.
 
dc.relation.ispartofApplied Physics Express
 
dc.relation.referencesReferences in Scopus
 
dc.titleConduction band offset of InGaN/AlInGaN quantum wells studied by deep level transient spectroscopic technique
 
dc.typeArticle
 
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Author Affiliations
  1. South China Normal University
  2. The University of Hong Kong
  3. Institute of Semiconductors Chinese Academy of Sciences
  4. Hong Kong University of Science and Technology
  5. Tsinghua University