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Article: Influences of leakage currents on the transport properties and photoelectric effects in heterojunctions composed of colossal magnetoresistance manganites and Nb-doped titanates
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TitleInfluences of leakage currents on the transport properties and photoelectric effects in heterojunctions composed of colossal magnetoresistance manganites and Nb-doped titanates
 
AuthorsWang, JF1
Wu, ZP1
Gao, J1
 
KeywordsBarrier heights
Colossal magnetoresistance manganites
Effects of leakage
Forward currents
Rectifying properties
 
Issue Date2012
 
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
 
CitationJournal of Applied Physics, 2012, v. 111 n. 7, article no. 07D724 [How to Cite?]
DOI: http://dx.doi.org/10.1063/1.3679413
 
AbstractThe effects of leakage currents were investigated for Pr 0.7Sr 0.3MnO 3/Nb-SrTiO 3 heterojunctions. It was found that small amounts of leakage currents could cause pronounced detriment to the rectifying properties but had very limited impacts on the barrier heights determined from the forward currents. Significant open circuit voltages V OC were observed when the highly rectified junctions were illuminated by a visible light with a wavelength of 532 nm. For the less rectified junctions, the leakage currents reduced V OC severely and resulted in an anomalous temperature dependence of V OC. Theories for semiconductor contacts were employed in order to discuss these results. © 2012 American Institute of Physics.
 
ISSN0021-8979
2013 Impact Factor: 2.185
 
DOIhttp://dx.doi.org/10.1063/1.3679413
 
DC FieldValue
dc.contributor.authorWang, JF
 
dc.contributor.authorWu, ZP
 
dc.contributor.authorGao, J
 
dc.date.accessioned2012-09-20T08:02:01Z
 
dc.date.available2012-09-20T08:02:01Z
 
dc.date.issued2012
 
dc.description.abstractThe effects of leakage currents were investigated for Pr 0.7Sr 0.3MnO 3/Nb-SrTiO 3 heterojunctions. It was found that small amounts of leakage currents could cause pronounced detriment to the rectifying properties but had very limited impacts on the barrier heights determined from the forward currents. Significant open circuit voltages V OC were observed when the highly rectified junctions were illuminated by a visible light with a wavelength of 532 nm. For the less rectified junctions, the leakage currents reduced V OC severely and resulted in an anomalous temperature dependence of V OC. Theories for semiconductor contacts were employed in order to discuss these results. © 2012 American Institute of Physics.
 
dc.description.naturepublished_or_final_version
 
dc.identifier.citationJournal of Applied Physics, 2012, v. 111 n. 7, article no. 07D724 [How to Cite?]
DOI: http://dx.doi.org/10.1063/1.3679413
 
dc.identifier.doihttp://dx.doi.org/10.1063/1.3679413
 
dc.identifier.hkuros207207
 
dc.identifier.issn0021-8979
2013 Impact Factor: 2.185
 
dc.identifier.issue7, article no. 07D724
 
dc.identifier.openurl
 
dc.identifier.scopuseid_2-s2.0-84861724669
 
dc.identifier.urihttp://hdl.handle.net/10722/164502
 
dc.identifier.volume111
 
dc.languageeng
 
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
 
dc.publisher.placeUnited States
 
dc.relation.ispartofJournal of Applied Physics
 
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License
 
dc.rightsCopyright (2012) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in (Journal of Applied Physics, 2012, v. 111 n. 7, article no. 07D724) and may be found at (http://jap.aip.org/resource/1/japiau/v111/i7/p07D724_s1).
 
dc.subjectBarrier heights
 
dc.subjectColossal magnetoresistance manganites
 
dc.subjectEffects of leakage
 
dc.subjectForward currents
 
dc.subjectRectifying properties
 
dc.titleInfluences of leakage currents on the transport properties and photoelectric effects in heterojunctions composed of colossal magnetoresistance manganites and Nb-doped titanates
 
dc.typeArticle
 
<?xml encoding="utf-8" version="1.0"?>
<item><contributor.author>Wang, JF</contributor.author>
<contributor.author>Wu, ZP</contributor.author>
<contributor.author>Gao, J</contributor.author>
<date.accessioned>2012-09-20T08:02:01Z</date.accessioned>
<date.available>2012-09-20T08:02:01Z</date.available>
<date.issued>2012</date.issued>
<identifier.citation>Journal of Applied Physics, 2012, v. 111 n. 7, article no. 07D724</identifier.citation>
<identifier.issn>0021-8979</identifier.issn>
<identifier.uri>http://hdl.handle.net/10722/164502</identifier.uri>
<description.abstract>The effects of leakage currents were investigated for Pr 0.7Sr 0.3MnO 3/Nb-SrTiO 3 heterojunctions. It was found that small amounts of leakage currents could cause pronounced detriment to the rectifying properties but had very limited impacts on the barrier heights determined from the forward currents. Significant open circuit voltages V OC were observed when the highly rectified junctions were illuminated by a visible light with a wavelength of 532 nm. For the less rectified junctions, the leakage currents reduced V OC severely and resulted in an anomalous temperature dependence of V OC. Theories for semiconductor contacts were employed in order to discuss these results. &#169; 2012 American Institute of Physics.</description.abstract>
<language>eng</language>
<publisher>American Institute of Physics. The Journal&apos;s web site is located at http://jap.aip.org/jap/staff.jsp</publisher>
<relation.ispartof>Journal of Applied Physics</relation.ispartof>
<rights>Creative Commons: Attribution 3.0 Hong Kong License</rights>
<rights>Copyright (2012) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in (Journal of Applied Physics, 2012, v. 111 n. 7, article no. 07D724) and may be found at (http://jap.aip.org/resource/1/japiau/v111/i7/p07D724_s1).</rights>
<subject>Barrier heights</subject>
<subject>Colossal magnetoresistance manganites</subject>
<subject>Effects of leakage</subject>
<subject>Forward currents</subject>
<subject>Rectifying properties</subject>
<title>Influences of leakage currents on the transport properties and photoelectric effects in heterojunctions composed of colossal magnetoresistance manganites and Nb-doped titanates</title>
<type>Article</type>
<identifier.openurl>http://library.hku.hk:4550/resserv?sid=HKU:IR&amp;issn=0021-8979 (print)&amp;volume=111&amp;spage=07D724&amp;epage=&amp;date=2012&amp;atitle=Influences+of+leakage+currents+on+the+transport+properties+and+photoelectric+effects+in+heterojunctions+composed+of+colossal+magnetoresistance+manganites+and+Nb-doped+titanates</identifier.openurl>
<description.nature>published_or_final_version</description.nature>
<identifier.doi>10.1063/1.3679413</identifier.doi>
<identifier.scopus>eid_2-s2.0-84861724669</identifier.scopus>
<identifier.hkuros>207207</identifier.hkuros>
<identifier.volume>111</identifier.volume>
<identifier.issue>7, article no. 07D724</identifier.issue>
<publisher.place>United States</publisher.place>
<bitstream.url>http://hub.hku.hk/bitstream/10722/164502/1/content.pdf</bitstream.url>
</item>
Author Affiliations
  1. The University of Hong Kong