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Article: Influences of leakage currents on the transport properties and photoelectric effects in heterojunctions composed of colossal magnetoresistance manganites and Nb-doped titanates

TitleInfluences of leakage currents on the transport properties and photoelectric effects in heterojunctions composed of colossal magnetoresistance manganites and Nb-doped titanates
Authors
KeywordsBarrier heights
Colossal magnetoresistance manganites
Effects of leakage
Forward currents
Rectifying properties
Issue Date2012
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal of Applied Physics, 2012, v. 111 n. 7, article no. 07D724 How to Cite?
Abstract
The effects of leakage currents were investigated for Pr 0.7Sr 0.3MnO 3/Nb-SrTiO 3 heterojunctions. It was found that small amounts of leakage currents could cause pronounced detriment to the rectifying properties but had very limited impacts on the barrier heights determined from the forward currents. Significant open circuit voltages V OC were observed when the highly rectified junctions were illuminated by a visible light with a wavelength of 532 nm. For the less rectified junctions, the leakage currents reduced V OC severely and resulted in an anomalous temperature dependence of V OC. Theories for semiconductor contacts were employed in order to discuss these results. © 2012 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/164502
ISSN
2013 Impact Factor: 2.185
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorWang, JFen_US
dc.contributor.authorWu, ZPen_US
dc.contributor.authorGao, Jen_US
dc.date.accessioned2012-09-20T08:02:01Z-
dc.date.available2012-09-20T08:02:01Z-
dc.date.issued2012en_US
dc.identifier.citationJournal of Applied Physics, 2012, v. 111 n. 7, article no. 07D724en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://hdl.handle.net/10722/164502-
dc.description.abstractThe effects of leakage currents were investigated for Pr 0.7Sr 0.3MnO 3/Nb-SrTiO 3 heterojunctions. It was found that small amounts of leakage currents could cause pronounced detriment to the rectifying properties but had very limited impacts on the barrier heights determined from the forward currents. Significant open circuit voltages V OC were observed when the highly rectified junctions were illuminated by a visible light with a wavelength of 532 nm. For the less rectified junctions, the leakage currents reduced V OC severely and resulted in an anomalous temperature dependence of V OC. Theories for semiconductor contacts were employed in order to discuss these results. © 2012 American Institute of Physics.-
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_US
dc.relation.ispartofJournal of Applied Physicsen_US
dc.rightsCreative Commons: Attribution 3.0 Hong Kong Licenseen_US
dc.rightsCopyright (2012) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in (Journal of Applied Physics, 2012, v. 111 n. 7, article no. 07D724) and may be found at (http://jap.aip.org/resource/1/japiau/v111/i7/p07D724_s1).en_US
dc.subjectBarrier heights-
dc.subjectColossal magnetoresistance manganites-
dc.subjectEffects of leakage-
dc.subjectForward currents-
dc.subjectRectifying properties-
dc.titleInfluences of leakage currents on the transport properties and photoelectric effects in heterojunctions composed of colossal magnetoresistance manganites and Nb-doped titanatesen_US
dc.typeArticleen_US
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-8979 (print)&volume=111&spage=07D724&epage=&date=2012&atitle=Influences+of+leakage+currents+on+the+transport+properties+and+photoelectric+effects+in+heterojunctions+composed+of+colossal+magnetoresistance+manganites+and+Nb-doped+titanatesen_US
dc.identifier.emailWang, JF: jfwwang@hku.hken_US
dc.identifier.emailGao, J: jugao@hku.hken_US
dc.identifier.authorityGao, J=rp00699en_US
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1063/1.3679413-
dc.identifier.scopuseid_2-s2.0-84861724669-
dc.identifier.hkuros207207en_US
dc.identifier.volume111en_US
dc.identifier.issue7, article no. 07D724-
dc.identifier.isiWOS:000303282401187-
dc.publisher.placeUnited States-

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